Inventor · disambiguated record
Denis Tsvetkov
Also filed as: TSVETKOV DENIS · TSVETKOV DENIS V
13 granted patents·367 citations·filing 2000–2015
94Inventor score
Technology areasH10P
Files withTECHNOLOGIES AND DEVICES INTER6KYMA TECHNOLOGIES INC3HANSER ANDREW D1PREBLE EDWARD A1TECHNOLOGIES AND DEVICES INC1
Top patents by PatentIndex Score
13 records- 0195US7777217B2Inclusion-free uniform semi-insulating group III nitride substrate and methods for making sameKYMA TECHNOLOGIES INC·Filed 2006·Granted Aug 17, 2010·22 cites·10 claims
- 0292US6660083B2Method of epitaxially growing device structures with submicron group III nitride layers utilizing HVPETECHNOLOGIES AND DEVICES INTER·Filed 2002·Granted Dec 9, 2003·48 cites·47 claims
- 0390US6579359B1Method of crystal growth and resulted structuresTECHNOLOGIES AND DEVICES INTER·Filed 2000·Granted Jun 17, 2003·91 cites·24 claims
- 0489US9263266B2Group III nitride articles and methods for making sameKYMA TECHNOLOGIES INC·Filed 2015·Granted Feb 16, 2016·4 cites·22 claims
- 0588US6955719B2Manufacturing methods for semiconductor devices with multiple III-V material layersTECHNOLOGIES AND DEVICES INC·Filed 2003·Granted Oct 18, 2005·52 cites·34 claims
- 0688US6706119B2Apparatus for epitaxially growing semiconductor device structures with submicron group III nitride layer utilizing HVPETECHNOLOGIES AND DEVICES INTER·Filed 2002·Granted Mar 16, 2004·31 cites·26 claims
- 0788US6656272B2Method of epitaxially growing submicron group III nitride layers utilizing HVPETECHNOLOGIES AND DEVICES INTER·Filed 2002·Granted Dec 2, 2003·32 cites·30 claims
- 0887US8435879B2Method for making group III nitride articlesHANSER ANDREW D·Filed 2006·Granted May 7, 2013·12 cites·12 claims
- 0984US6573164B2Method of epitaxially growing device structures with sharp layer interfaces utilizing HVPETECHNOLOGIES AND DEVICES INTER·Filed 2002·Granted Jun 3, 2003·23 cites·35 claims
- 1081US8202793B2Inclusion-free uniform semi-insulating group III nitride substrates and methods for making samePREBLE EDWARD A·Filed 2010·Granted Jun 19, 2012·4 cites·12 claims
- 1179US9082890B1Group III nitride articles having nucleation layers, transitional layers, and bulk layersKYMA TECHNOLOGIES INC·Filed 2013·Granted Jul 14, 2015·2 cites·18 claims
- 1278US6890809B2Method for fabricating a P-N heterojunction device utilizing HVPE grown III-V compound layers and resultant deviceTECHNOLOGIES AND DEVILES INTER·Filed 2002·Granted May 10, 2005·34 cites·29 claims
- 1375US7670435B2Apparatus for epitaxially growing semiconductor device structures with sharp layer interfaces utilizing HVPETECHNOLOGIES AND DEVICES INTER·Filed 2002·Granted Mar 2, 2010·12 cites·66 claims
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →