Inventor · disambiguated record
Andrew D. Hanser
Also filed as: HANSER ANDREW · HANSER ANDREW D · HANSER ANDREW DAVID
12 granted patents·5 pending applications·394 citations·filing 2001–2025
93Inventor score
Top patents by PatentIndex Score
17 records- 0196US6692568B2Method and apparatus for producing MIIIN columns and MIIIN materials grown thereonKYMA TECHNOLOGIES INC·Filed 2001·Granted Feb 17, 2004·198 cites·93 claims
- 0295US7777217B2Inclusion-free uniform semi-insulating group III nitride substrate and methods for making sameKYMA TECHNOLOGIES INC·Filed 2006·Granted Aug 17, 2010·22 cites·10 claims
- 0395US6784085B2MIIIN based materials and methods and apparatus for producing sameUNIV NORTH CAROLINA STATE·Filed 2001·Granted Aug 31, 2004·96 cites·49 claims
- 0493US7897490B2Single crystal group III nitride articles and method of producing same by HVPE method incorporating a polycrystalline layer for yield enhancementKYMA TECHNOLOGIES INC·Filed 2006·Granted Mar 1, 2011·16 cites·26 claims
- 0589US9263266B2Group III nitride articles and methods for making sameKYMA TECHNOLOGIES INC·Filed 2015·Granted Feb 16, 2016·4 cites·22 claims
- 0689US8349711B2Single crystal group III nitride articles and method of producing same by HVPE method incorporating a polycrystalline layer for yield enhancementKYMA TECHNOLOGIES INC·Filed 2011·Granted Jan 8, 2013·6 cites·18 claims
- 0789US7727874B2Non-polar and semi-polar GaN substrates, devices, and methods for making themKYMA TECHNOLOGIES INC·Filed 2008·Granted Jun 1, 2010·33 cites·33 claims
- 0887US8435879B2Method for making group III nitride articlesHANSER ANDREW D·Filed 2006·Granted May 7, 2013·12 cites·12 claims
- 0981US8202793B2Inclusion-free uniform semi-insulating group III nitride substrates and methods for making samePREBLE EDWARD A·Filed 2010·Granted Jun 19, 2012·4 cites·12 claims
- 1079US9082890B1Group III nitride articles having nucleation layers, transitional layers, and bulk layersKYMA TECHNOLOGIES INC·Filed 2013·Granted Jul 14, 2015·2 cites·18 claims
- 1173US8637848B2Single crystal group III nitride articles and method of producing same by HVPE method incorporating a polycrystalline layer for yield enhancementKYMA TECHNOLOGIES INC·Filed 2012·Granted Jan 28, 2014·1 cites·10 claims
- 1264US2025313954A1Gas injectors for mocvd/cvd systemsVEECO INSTR INC·Filed 2025·Application pending·0 cites
- 1362US2025263837A1Flared shutter liner for chemical vapor deposition systemVEECO INSTR INC·Filed 2025·Application pending·0 cites
- 1461US8871556B2Single crystal group III nitride articles and method of producing same by HVPE method incorporating a polycrystalline layer for yield enhancementKYMA TECHNOLOGIES INC·Filed 2013·Granted Oct 28, 2014·0 cites·16 claims
- 1556US2024102166A1Wafer carrier assembly with improved temperature uniformityVEECO INSTR INC·Filed 2023·Application pending·0 cites
- 1649US2012235161A1Group iii nitride templates and related heterostructures, devices, and methods for making themPASKOVA TANYA·Filed 2012·Application pending·0 cites
- 1746US2011127544A1Group iii nitride templates and related heterostructures, devices, and methods for making themKyma Technologies·Filed 2009·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →