Inventor · disambiguated record
Tzu-En Ho
Also filed as: HO TZU-EN
9 granted patents·2 pending applications·69 citations·filing 2002–2006
86Inventor score
Files withNANYA TECHNOLOGY CORP9
Top patents by PatentIndex Score
11 records- 0181US6737334B2Method of fabricating a shallow trench isolation structureNANYA TECHNOLOGY CORP·Filed 2002·Granted May 18, 2004·26 cites·19 claims
- 0268US7375017B2Method for fabricating semiconductor device having stacked-gate structureNANYA TECHNOLOGY CORP·Filed 2006·Granted May 20, 2008·3 cites·9 claims
- 0363US7101777B2Methods for manufacturing stacked gate structure and field effect transistor provided with the sameNANYA TECHNOLOGY CORP·Filed 2004·Granted Sep 5, 2006·11 cites·16 claims
- 0463US6833311B2Manufacturing method for a shallow trench isolation region with high aspect ratioNANYA TECHNOLOGY CORP·Filed 2003·Granted Dec 21, 2004·11 cites·26 claims
- 0561US6858516B2Manufacturing method of a high aspect ratio shallow trench isolation regionNANYA TECHNOLOGY CORP·Filed 2002·Granted Feb 22, 2005·10 cites·15 claims
- 0655US6743728B2Method for forming shallow trench isolationNANYA TECHNOLOGY CORP·Filed 2002·Granted Jun 1, 2004·5 cites·27 claims
- 0745US7022603B2Method for fabricating semiconductor device having stacked-gate structureNANYA TECHNOLOGY CORP·Filed 2003·Granted Apr 4, 2006·2 cites·10 claims
- 0843US6794270B2Method for shallow trench isolation fabrication and partial oxide layer removalNANYA TECHNOLOGY CORP·Filed 2003·Granted Sep 21, 2004·1 cites·14 claims
- 0936US6958283B2Method for fabricating trench isolationNANYA TECHNOLOGY CORP·Filed 2003·Granted Oct 25, 2005·0 cites·44 claims
- 1035US2003143817A1Method of forming shallow trench isolationFiled 2002·Application pending·0 cites
- 1135US2005124127A1Method for manufacturing gate structure for use in semiconductor deviceFiled 2003·Application pending·0 cites
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