Inventor · disambiguated record
Dongkyo Shim
Also filed as: SHIM DONGKYO
15 granted patents·2 pending applications·72 citations·filing 2012–2025
90Inventor score
Top patents by PatentIndex Score
17 records- 0195US10090046B2Nonvolatile memory device and read method thereofPARK SANG SOO·Filed 2016·Granted Oct 2, 2018·30 cites·20 claims
- 0290US11854623B2Memory controller, memory device and memory system having improved threshold voltage distribution characteristics and related operating methodsSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Dec 26, 2023·2 cites·14 claims
- 0389US9368166B2Nonvolatile memory devices, memory systems, and control methods using simultaneous recovery and output operationsKWAK DONGHUN·Filed 2014·Granted Jun 14, 2016·11 cites·14 claims
- 0487US9824761B2Storage device and a write method including a coarse program operation and fine program operationSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Nov 21, 2017·7 cites·17 claims
- 0582US9336866B2Storage device and a write method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted May 10, 2016·6 cites·26 claims
- 0679US9812214B2Nonvolatile memory device, storage device including nonvolatile memory device and operating method of nonvolatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Nov 7, 2017·5 cites·20 claims
- 0776US9502124B2Nonvolatile memory device and method controlling word line setup time based on difference in setup voltage levelsSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Nov 22, 2016·4 cites·17 claims
- 0868US8861276B2Nonvolatile memory device, memory system comprising same, and method of operating sameSHIM DONGKYO·Filed 2012·Granted Oct 14, 2014·5 cites·18 claims
- 0962US2025272015A1Nonvolatile memory device and operation method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 1060US12293098B2Nonvolatile memory device and operation method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted May 6, 2025·0 cites·20 claims
- 1159US11183250B2Memory controller, memory device and memory system having improved threshold voltage distribution characteristics and related operating methodsSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Nov 23, 2021·0 cites·18 claims
- 1252US10699782B2Nonvolatile memory device and method of operation with a word line setup time based on two sequential read voltagesSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jun 30, 2020·0 cites·15 claims
- 1352US9202587B2Nonvolatile memory device, memory system comprising same, and method of programming sameJO JONGHOO·Filed 2014·Granted Dec 1, 2015·2 cites·12 claims
- 1447US11315649B2Memory controller, memory device and memory system having improved threshold voltage distribution characteristics and related operating methodsSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Apr 26, 2022·0 cites·20 claims
- 1546US10388367B2Nonvolatile memory device with controlled word line setup timeSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Aug 20, 2019·0 cites·9 claims
- 1642US9520168B2Nonvolatile memory devices, memory systems and related control methodsSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Dec 13, 2016·0 cites·20 claims
- 1736US2014025866A1Nonvolatile memory device and operating methodSAMSUNG ELECTRONICS CO LTD·Filed 2013·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →