Inventor · disambiguated record
Eisuke Suekawa
Also filed as: SUEKAWA EISUKE
16 granted patents·105 citations·filing 2002–2016
92Inventor score
Top patents by PatentIndex Score
16 records- 0188US7675113B2Insulated gate transistorMITSUBISHI ELECTRIC CORP·Filed 2007·Granted Mar 9, 2010·21 cites·5 claims
- 0284US7888733B2Power semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2007·Granted Feb 15, 2011·13 cites·9 claims
- 0382US7629626B1Semiconductor device having insulated gate bipolar transistorMITSUBISHI ELECTRIC CORP·Filed 2009·Granted Dec 8, 2009·8 cites·3 claims
- 0481US7635878B2Semiconductor device having insulated gate bipolar transistorMITSUBISHI ELECTRIC CORP·Filed 2005·Granted Dec 22, 2009·8 cites·8 claims
- 0580US9041007B2Semiconductor deviceSUEKAWA EISUKE·Filed 2011·Granted May 26, 2015·6 cites·10 claims
- 0679US7250639B1Insulated gate bipolar transistorMITSUBISHI ELECTRIC CORP·Filed 2002·Granted Jul 31, 2007·28 cites·8 claims
- 0774US8450828B2Semiconductor deviceSUEKAWA EISUKE·Filed 2008·Granted May 28, 2013·7 cites·11 claims
- 0866US9627383B2Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2013·Granted Apr 18, 2017·2 cites·13 claims
- 0965US7808014B2Semiconductor device having insulated gate bipolar transistorMITSUBISHI ELECTRIC CORP·Filed 2009·Granted Oct 5, 2010·2 cites·1 claims
- 1063US9842906B2Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2015·Granted Dec 12, 2017·1 cites·14 claims
- 1161US6670688B2Semiconductor device including at least one schottky metal layer surrounding PN junctionMITSUBISHI ELECTRIC CORP·Filed 2002·Granted Dec 30, 2003·9 cites·6 claims
- 1243US9472543B2Wide band gap semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2014·Granted Oct 18, 2016·0 cites·10 claims
- 1343US9362391B2Silicon carbide semiconductor device and method of manufacturing the sameTARUI YOICHIRO·Filed 2011·Granted Jun 7, 2016·0 cites·16 claims
- 1442US11295954B2Manufacturing method for a semiconductor device including a polysilicon resistorMITSUBISHI ELECTRIC CORP·Filed 2016·Granted Apr 5, 2022·0 cites·15 claims
- 1535US10355127B2Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2015·Granted Jul 16, 2019·0 cites·10 claims
- 1633US6559481B2Semiconductor device for precise measurement of a forward voltage effectMITSUBISHI ELECTRIC CORP·Filed 2002·Granted May 6, 2003·0 cites·9 claims
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