Inventor · disambiguated record
Joris Baele
Also filed as: BAELE JORIS
7 granted patents·1 pending application·30 citations·filing 2001–2024
80Inventor score
Files withSEMICONDUCTOR COMPONENTS IND LLC4SEMICONDUCTOR COMPONENTS IND2AMI SEMICONDUCTOR BELGIUM BVBA1MOENS PETER1
Top patents by PatentIndex Score
8 records- 0186US7709889B2Semiconductor device with improved breakdown properties and manufacturing method thereofSEMICONDUCTOR COMPONENTS IND·Filed 2007·Granted May 4, 2010·16 cites·25 claims
- 0276US10741494B2Electronic device including a contact structure contacting a layerSEMICONDUCTOR COMPONENTS IND·Filed 2018·Granted Aug 11, 2020·2 cites·20 claims
- 0373US2024395922A1Hemt devices with reduced size and high alignment toleranceSEMICONDUCTOR COMPONENTS IND LLC·Filed 2024·Application pending·0 cites
- 0469US8115273B2Deep trench isolation structures in integrated semiconductor devicesMOENS PETER·Filed 2008·Granted Feb 14, 2012·7 cites·22 claims
- 0564US12068406B2HEMT devices with reduced size and high alignment toleranceSEMICONDUCTOR COMPONENTS IND LLC·Filed 2021·Granted Aug 20, 2024·0 cites·20 claims
- 0659US9768247B1Semiconductor device having improved superjunction trench structure and method of manufactureSEMICONDUCTOR COMPONENTS IND LLC·Filed 2016·Granted Sep 19, 2017·1 cites·20 claims
- 0750US11721736B2Electronic device including a gate structure and a process of forming the sameSEMICONDUCTOR COMPONENTS IND LLC·Filed 2021·Granted Aug 8, 2023·0 cites·17 claims
- 0844US6544889B2Method for tungsten chemical vapor deposition on a semiconductor substrateAMI SEMICONDUCTOR BELGIUM BVBA·Filed 2001·Granted Apr 8, 2003·4 cites·5 claims
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