Inventor · disambiguated record
Chun-Yung Sung
Also filed as: SUNG CHUN-YUNG
58 granted patents·14 pending applications·1,185 citations·filing 1999–2016
99Inventor score
Top patents by PatentIndex Score
72 records- 0199US7298009B2Semiconductor method and device with mixed orientation substrateINFINEON TECHNOLOGIES AG·Filed 2005·Granted Nov 20, 2007·588 cites·18 claims
- 0297US8805148B2Generation of terahertz electromagnetic waves in graphene by coherent photon-mixingAVOURIS PHAEDON·Filed 2011·Granted Aug 12, 2014·28 cites·22 claims
- 0397US8610617B1Graphene based structures and methods for broadband electromagnetic radiation absorption at the microwave and terahertz frequenciesAVOURIS PHAEDON·Filed 2012·Granted Dec 17, 2013·37 cites·4 claims
- 0497US7547616B2Laser processing method for trench-edge-defect-free solid phase epitaxy in confined geometricsIBM·Filed 2006·Granted Jun 16, 2009·30 cites·1 claims
- 0597US7247547B2Method of fabricating a field effect transistor having improved junctionsIBM·Filed 2005·Granted Jul 24, 2007·57 cites·13 claims
- 0695US9174413B2Graphene based structures and methods for shielding electromagnetic radiationAVOURIS PHAEDON·Filed 2012·Granted Nov 3, 2015·14 cites·6 claims
- 0794US8598641B2Sea-of-fins structure on a semiconductor substrate and method of fabricationCHEN HOWARD H·Filed 2011·Granted Dec 3, 2013·16 cites·18 claims
- 0893US8440999B2Semiconductor chip with graphene based devices in an interconnect structure of the chipDIMITRAKOPOULOS CHRISTOS D·Filed 2011·Granted May 14, 2013·14 cites·18 claims
- 0993US8076190B2Sea-of-fins structure on a semiconductor substrate and method of fabricationCHEN HOWARD H·Filed 2009·Granted Dec 13, 2011·21 cites·4 claims
- 1092US8877340B2Graphene growth on a non-hexagonal latticeCHU JACK O·Filed 2010·Granted Nov 4, 2014·12 cites·14 claims
- 1192US7525162B2Orientation-optimized PFETS in CMOS devices employing dual stress linersIBM·Filed 2007·Granted Apr 28, 2009·24 cites·21 claims
- 1291US9215835B2Graphene based structures and methods for shielding electromagnetic radiationIBM·Filed 2015·Granted Dec 15, 2015·3 cites·8 claims
- 1391US7615816B2Buried plate structure for vertical dram devicesIBM·Filed 2007·Granted Nov 10, 2009·14 cites·3 claims
- 1490US9174414B2Graphene based structures and methods for shielding electromagnetic radiationAVOURIS PHAEDON·Filed 2012·Granted Nov 3, 2015·10 cites·12 claims
- 1589US8187955B2Graphene growth on a carbon-containing semiconductor layerCHU JACK O·Filed 2009·Granted May 29, 2012·10 cites·22 claims
- 1689US7479437B2Method to reduce contact resistance on thin silicon-on-insulator deviceIBM·Filed 2006·Granted Jan 20, 2009·13 cites·17 claims
- 1787US8728575B2Method for synthesizing a thin filmLI XUESONG·Filed 2012·Granted May 20, 2014·5 cites·6 claims
- 1887US8658488B2Method for forming semiconductor chip with graphene based devices in an interconnect structure of the chipIBM·Filed 2013·Granted Feb 25, 2014·6 cites·20 claims
- 1987US7205639B2Semiconductor devices with rotated substrates and methods of manufacture thereofIBM·Filed 2005·Granted Apr 17, 2007·12 cites·16 claims
- 2087US6346454B1Method of making dual damascene interconnect structure and metal electrode capacitorAGERE SYST GUARDIAN CORP·Filed 1999·Granted Feb 12, 2002·88 cites·18 claims
- 2186US7396407B2Trench-edge-defect-free recrystallization by edge-angle-optimized solid phase epitaxy: method and applications to hybrid orientation substratesIBM·Filed 2006·Granted Jul 8, 2008·9 cites·8 claims
- 2286US7291539B2Amorphization/templated recrystallization method for hybrid orientation substratesIBM·Filed 2005·Granted Nov 6, 2007·7 cites·14 claims
- 2385US9355887B2Dual trench isolation for CMOS with hybrid orientationsCHAN VICTOR·Filed 2012·Granted May 31, 2016·6 cites·11 claims
- 2483US7671421B2CMOS structure and method for fabrication thereof using multiple crystallographic orientations and gate materialsIBM·Filed 2006·Granted Mar 2, 2010·8 cites·13 claims
- 2583US7247536B2Vertical DRAM device with self-aligned upper trench shapingIBM·Filed 2005·Granted Jul 24, 2007·7 cites·18 claims
- 2683US6680542B1Damascene structure having a metal-oxide-metal capacitor associated therewithAGERE SYSTEMS INC·Filed 2000·Granted Jan 20, 2004·38 cites·10 claims
- 2782US7329939B2Metal-insulator-metal capacitor and method of fabricating sameIBM·Filed 2005·Granted Feb 12, 2008·8 cites·13 claims
- 2881US8158481B2CMOS structure and method for fabrication thereof using multiple crystallographic orientations and gate materialsCHEN TZE-CHIANG·Filed 2010·Granted Apr 17, 2012·5 cites·8 claims
- 2980US7704852B2Amorphization/templated recrystallization method for hybrid orientation substratesIBM·Filed 2007·Granted Apr 27, 2010·4 cites·10 claims
- 3079US7618857B2Method of reducing detrimental STI-induced stress in MOSFET channelsIBM·Filed 2007·Granted Nov 17, 2009·8 cites·16 claims
- 3178US7833873B2Method and structure to reduce contact resistance on thin silicon-on-insulator deviceIBM·Filed 2008·Granted Nov 16, 2010·5 cites·17 claims
- 3278US7122437B2Deep trench capacitor with buried plate electrode and isolation collarIBM·Filed 2003·Granted Oct 17, 2006·23 cites·26 claims
- 3377US8236636B2Hybrid orientation semiconductor structure with reduced boundary defects and method of forming sameYIN HAIZHOU·Filed 2010·Granted Aug 7, 2012·3 cites·20 claims
- 3477US7598147B2Method of forming CMOS with Si:C source/drain by laser melting and recrystallizationIBM·Filed 2007·Granted Oct 6, 2009·5 cites·20 claims
- 3576US9210835B2Graphene based structures and methods for shielding electromagnetic radiationIBM·Filed 2015·Granted Dec 8, 2015·2 cites·4 claims
- 3676US7449374B2Methods of manufacturing semiconductor devices with rotated substratesINFINEON TECHNOLOGIES AG·Filed 2007·Granted Nov 11, 2008·5 cites·24 claims
- 3770US8785281B2CMOS structure and method for fabrication thereof using multiple crystallographic orientations and gate materialsCHEN TZE-CHIANG·Filed 2012·Granted Jul 22, 2014·2 cites·20 claims
- 3868US9413075B2Graphene based structures and methods for broadband electromagnetic radiation absorption at the microwave and terahertz frequenciesAVOURIS PHAEDON·Filed 2012·Granted Aug 9, 2016·1 cites·6 claims
- 3967US6964908B2Metal-insulator-metal capacitor and method of fabricating sameIBM·Filed 2003·Granted Nov 15, 2005·10 cites·29 claims
- 4066US8097516B2Dual trench isolation for CMOS with hybrid orientationsCHAN VICTOR·Filed 2008·Granted Jan 17, 2012·2 cites·6 claims
- 4165US7863712B2Hybrid orientation semiconductor structure with reduced boundary defects and method of forming sameIBM·Filed 2007·Granted Jan 4, 2011·1 cites·13 claims
- 4265US7465992B2Field effect transistor with mixed-crystal-orientation channel and source/drain regionsIBM·Filed 2005·Granted Dec 16, 2008·3 cites·28 claims
- 4364US7678622B2Semiconductor method and device with mixed orientation substrateINFINEON TECHNOLOGIES AG·Filed 2007·Granted Mar 16, 2010·2 cites·23 claims
- 4463US7542330B2SRAM with asymmetrical pass gatesIBM·Filed 2007·Granted Jun 2, 2009·5 cites·20 claims
- 4562US7804148B2Opto-thermal mask including aligned thermal dissipative layer, reflective layer and transparent capping layerIBM·Filed 2006·Granted Sep 28, 2010·1 cites·8 claims
- 4661US7314790B2Enhancement of electron and hole mobilities in <110> Si under biaxial compressive strainIBM·Filed 2006·Granted Jan 1, 2008·1 cites·15 claims
- 4761US6933192B1Method for fabricating a trench having a buried dielectric collarIBM·Filed 2004·Granted Aug 23, 2005·9 cites·20 claims
- 4858US7691733B2Laser processing method for trench-edge-defect-free solid phase epitaxy in confined geometricsIBM·Filed 2008·Granted Apr 6, 2010·0 cites·16 claims
- 4956US8039331B2Opto-thermal annealing methods for forming metal gate and fully silicided gate-field effect transistorsIBM·Filed 2008·Granted Oct 18, 2011·0 cites·8 claims
- 5056US7999319B2Trench-edge-defect-free recrystallization by edge-angle-optimized solid phase epitaxy: method and applications to hybrid orientation substratesIBM·Filed 2008·Granted Aug 16, 2011·0 cites·9 claims
Showing the top 50 of 72 patent records by PatentIndex Score.
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