Inventor · disambiguated record
Wen-Chuan Chiang
Also filed as: CHIANG WEN-CHUAN
49 granted patents·1 pending application·1,273 citations·filing 1998–2018
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG35TAIWAN SEMICONDUCTOR MFG CO LTD10TU KUO-CHI2CHEN KUO-JI1CHI MIN-HWA1
Top patents by PatentIndex Score
50 records- 0198US7564105B2Quasi-plannar and FinFET-like transistors on bulk siliconTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Jul 21, 2009·138 cites·39 claims
- 0296US8421166B2Semiconductor device and fabrication thereofCHI MIN-HWA·Filed 2011·Granted Apr 16, 2013·29 cites·12 claims
- 0395US9391016B2MIM capacitor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jul 12, 2016·30 cites·20 claims
- 0495US6143604AMethod for fabricating small-size two-step contacts for word-line strapping on dynamic random access memory (DRAM)TAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Nov 7, 2000·252 cites·30 claims
- 0592US8643074B2Semiconductor devicePAI CHIH-YANG·Filed 2012·Granted Feb 4, 2014·17 cites·20 claims
- 0690US9368392B2MIM capacitor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jun 14, 2016·13 cites·19 claims
- 0790US7091543B2Embedded dual-port DRAM processTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Aug 15, 2006·38 cites·9 claims
- 0889US9219110B2MIM capacitor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Dec 22, 2015·12 cites·20 claims
- 0989US6271125B1Method to reduce contact hole aspect ratio for embedded DRAM arrays and logic devices, via the use of a tungsten bit line structureTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Aug 7, 2001·42 cites·11 claims
- 1088US8759193B2Method of fabricating semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jun 24, 2014·6 cites·20 claims
- 1186US6080637AShallow trench isolation technology to eliminate a kink effectTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Jun 27, 2000·88 cites·25 claims
- 1285US9614025B2Method of fabricating semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 4, 2017·3 cites·19 claims
- 1385US6420226B1Method of defining a buried stack capacitor structure for a one transistor RAM cellTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Jul 16, 2002·38 cites·27 claims
- 1484US9728597B2Metal-insulator-metal structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 8, 2017·4 cites·20 claims
- 1584US9269760B2Method of fabricating semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Feb 23, 2016·3 cites·20 claims
- 1684US9178008B2Metal-insulator-metal capacitor with current leakage protectionCHEN KUO-JI·Filed 2012·Granted Nov 3, 2015·6 cites·20 claims
- 1784US6638813B1Method of forming a composite spacer to eliminate polysilicon stringers between elements in a pseudo SRAM cellTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Oct 28, 2003·33 cites·30 claims
- 1883US6168984B1Reduction of the aspect ratio of deep contact holes for embedded DRAM devicesTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Jan 2, 2001·61 cites·32 claims
- 1982US9793212B2Interconnect structures and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Oct 17, 2017·4 cites·20 claims
- 2082US7994040B2Semiconductor device and fabrication thereofTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Aug 9, 2011·11 cites·9 claims
- 2182US6165839AProcess to fabricate a cylindrical, capacitor structure under a bit line structure for a dynamic random access memory cellTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Dec 26, 2000·53 cites·13 claims
- 2281US8969937B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Mar 3, 2015·3 cites·20 claims
- 2381US8617949B2Capacitor and method for making sameTU KUO-CHI·Filed 2011·Granted Dec 31, 2013·4 cites·20 claims
- 2481US6661043B1One-transistor RAM approach for high density memory applicationTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Dec 9, 2003·27 cites·61 claims
- 2580US7371634B2Amorphous carbon contact film for contact hole etch processTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted May 13, 2008·5 cites·24 claims
- 2676US8659121B2Semiconductor devices with orientation-free decoupling capacitors and methods of manufacture thereofTU KUO-CHI·Filed 2011·Granted Feb 25, 2014·4 cites·10 claims
- 2775US10847606B2Capacitor and method for making sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 24, 2020·1 cites·20 claims
- 2874US9553095B2Capacitor and method for making sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Jan 24, 2017·2 cites·20 claims
- 2974US6177340B1Method to reduce contact hole aspect ratio for embedded DRAM arrays and logic devices, via the use of a tungsten bit line structureTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Jan 23, 2001·39 cites·10 claims
- 3071US10157976B2Capacitor and method for making sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 18, 2018·1 cites·20 claims
- 3171US6168989B1Process for making new and improved crown-shaped capacitors on dynamic random access memory cellsTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Jan 2, 2001·33 cites·25 claims
- 3269US6794254B1Embedded dual-port DRAM processTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Sep 21, 2004·10 cites·18 claims
- 3369US6214715B1Method for fabricating a self aligned contact which eliminates the key hole problem using a two step spacer depositionTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Apr 10, 2001·37 cites·16 claims
- 3468US6403416B1Method for making a double-cylinder-capacitor structure for dynamic random access memory (DRAM)TAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Jun 11, 2002·29 cites·22 claims
- 3562US6376294B1Method to define poly dog-bone for word line strapping contact at stitch area in embedded DRAM processTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Apr 23, 2002·10 cites·28 claims
- 3660US6287939B1Method for fabricating a shallow trench isolation which is not susceptible to buried contact trench formationTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Sep 11, 2001·25 cites·12 claims
- 3760US6194234B1Method to evaluate hemisperical grain (HSG) polysilicon surfaceTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Feb 27, 2001·23 cites·12 claims
- 3858US6187659B1Node process integration technology to improve data retention for logic based embedded dramTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Feb 13, 2001·17 cites·17 claims
- 3957US7633110B2Memory cellTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Dec 15, 2009·6 cites·17 claims
- 4057US6103455AMethod to form a recess free deep contactTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Aug 15, 2000·22 cites·15 claims
- 4157US6020236AMethod to form capacitance node contacts with improved isolation in a DRAM processTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Feb 1, 2000·15 cites·20 claims
- 4255US6227211B1Uniformity improvement of high aspect ratio contact by stop layerTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted May 8, 2001·23 cites·15 claims
- 4355US5968278AHigh aspect ratio contactTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Oct 19, 1999·19 cites·34 claims
- 4455US5922515AApproaches to integrate the deep contact moduleTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Jul 13, 1999·20 cites·20 claims
- 4553US9425247B2Metal-insulator-metal capacitor with current leakage protectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 23, 2016·0 cites·20 claims
- 4648US6306767B1Self-aligned etching method for forming high areal density patterned microelectronic structuresTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Oct 23, 2001·2 cites·17 claims
- 4744US2008217775A1Method of forming contact plugs for eliminating tungsten seam issueTAIWAN SEMICONDUCTOR MFG·Filed 2007·Application pending·0 cites
- 4840US6235580B1Process for forming a crown shaped capacitor structure for a DRAM deviceTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted May 22, 2001·6 cites·18 claims
- 4938US6174802B1Method for fabricating a self aligned contact which eliminates the key hole problem using a two step contact depositionTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Jan 16, 2001·7 cites·13 claims
- 5029US7482278B1Key-hole free process for high aspect ratio gap filling with reentrant spacerTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Jan 27, 2009·2 cites·24 claims
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