Inventor · disambiguated record
Wesley C. Natzle
Also filed as: NATZLE WESLEY · NATZLE WESLEY C · NATZLE WESLEY CHARLES
66 granted patents·10 pending applications·2,766 citations·filing 1990–2012
99Inventor score
Top patents by PatentIndex Score
76 records- 0198US7859013B2Metal oxide field effect transistor with a sharp haloIBM·Filed 2007·Granted Dec 28, 2010·100 cites·17 claims
- 0298US6335261B1Directional CVD process with optimized etchbackIBM·Filed 2000·Granted Jan 1, 2002·214 cites·20 claims
- 0398US6271094B1Method of making MOSFET with high dielectric constant gate insulator and minimum overlap capacitanceIBM·Filed 2000·Granted Aug 7, 2001·245 cites·31 claims
- 0497US6660598B2Method of forming a fully-depleted SOI ( silicon-on-insulator) MOSFET having a thinned channel regionIBM·Filed 2002·Granted Dec 9, 2003·137 cites·10 claims
- 0596US6319794B1Structure and method for producing low leakage isolation devicesIBM·Filed 1998·Granted Nov 20, 2001·258 cites·19 claims
- 0695US6835614B2Damascene double-gate MOSFET with vertical channel regionsIBM·Filed 2003·Granted Dec 28, 2004·100 cites·19 claims
- 0795US6790733B1Preserving TEOS hard mask using COR for raised source-drain including removable/disposable spacerIBM·Filed 2003·Granted Sep 14, 2004·122 cites·23 claims
- 0894US6841831B2Fully-depleted SOI MOSFETs with low source and drain resistance and minimal overlap capacitance using a recessed channel damascene gate processIBM·Filed 2003·Granted Jan 11, 2005·74 cites·10 claims
- 0994US5838055ATrench sidewall patterned by vapor phase etchingIBM·Filed 1997·Granted Nov 17, 1998·135 cites·2 claims
- 1094US5282925ADevice and method for accurate etching and removal of thin filmIBM·Filed 1992·Granted Feb 1, 1994·200 cites·48 claims
- 1192US6774000B2Method of manufacture of MOSFET device with in-situ doped, raised source and drain structuresIBM·Filed 2002·Granted Aug 10, 2004·56 cites·17 claims
- 1291US7502709B2Dynamic metrology sampling for a dual damascene processTOKYO ELECTRON LTD·Filed 2006·Granted Mar 10, 2009·17 cites·33 claims
- 1390US6245619B1Disposable-spacer damascene-gate process for SUB 0.05 μm MOS devicesIBM·Filed 2000·Granted Jun 12, 2001·51 cites·8 claims
- 1489US7567700B2Dynamic metrology sampling with wafer uniformity controlTOKYO ELECTRON LTD·Filed 2006·Granted Jul 28, 2009·11 cites·24 claims
- 1589US6858532B2Low defect pre-emitter and pre-base oxide etch for bipolar transistors and related toolingIBM·Filed 2002·Granted Feb 22, 2005·44 cites·19 claims
- 1689US6353249B1MOSFET with high dielectric constant gate insulator and minimum overlap capacitanceINTERNAT BUSINSESS MACHINES CO·Filed 2001·Granted Mar 5, 2002·55 cites·10 claims
- 1788US9252018B2High-k/metal gate transistor with L-shaped gate encapsulation layerMO RENEE T·Filed 2012·Granted Feb 2, 2016·9 cites·20 claims
- 1888US6656824B1Low resistance T-gate MOSFET device using a damascene gate process and an innovative oxide removal etchIBM·Filed 2002·Granted Dec 2, 2003·40 cites·10 claims
- 1987US6926843B2Etching of hard masksIBM·Filed 2000·Granted Aug 9, 2005·45 cites·20 claims
- 2085US7498271B1Nitrogen based plasma process for metal gate MOS deviceIBM·Filed 2008·Granted Mar 3, 2009·10 cites·2 claims
- 2185US6884734B2Vapor phase etch trim structure with top etch blocking layerIBM·Filed 2001·Granted Apr 26, 2005·38 cites·38 claims
- 2285US6071815AMethod of patterning sidewalls of a trench in integrated circuit manufacturingIBM·Filed 1998·Granted Jun 6, 2000·63 cites·4 claims
- 2384US5636320ASealed chamber with heating lamps provided within transparent tubesIBM·Filed 1995·Granted Jun 3, 1997·48 cites·20 claims
- 2483US7292906B2Formula-based run-to-run controlTOKYO ELECTRON LTD·Filed 2004·Granted Nov 6, 2007·33 cites·27 claims
- 2583US6858903B2MOSFET device with in-situ doped, raised source and drain structuresIBM·Filed 2004·Granted Feb 22, 2005·24 cites·21 claims
- 2683US6838347B1Method for reducing line edge roughness of oxide material using chemical oxide removalIBM·Filed 2003·Granted Jan 4, 2005·28 cites·12 claims
- 2783US6635923B2Damascene double-gate MOSFET with vertical channel regionsIBM·Filed 2001·Granted Oct 21, 2003·28 cites·11 claims
- 2882US7459382B2Field effect device with reduced thickness gateIBM·Filed 2006·Granted Dec 2, 2008·9 cites·1 claims
- 2982US6074951AVapor phase etching of oxide masked by resist or masking materialIBM·Filed 1997·Granted Jun 13, 2000·66 cites·12 claims
- 3082US5876879AOxide layer patterned by vapor phase etchingIBM·Filed 1997·Granted Mar 2, 1999·61 cites·10 claims
- 3182US5766971AOxide strip that improves planarityIBM·Filed 1996·Granted Jun 16, 1998·67 cites·26 claims
- 3279US5081439AThin film resistor and method for producing sameIBM·Filed 1990·Granted Jan 14, 1992·33 cites·17 claims
- 3378US8900961B2Selective deposition of germanium spacers on nitrideCHAKRAVARTI ASHIMA B·Filed 2010·Granted Dec 2, 2014·3 cites·20 claims
- 3476US6960510B2Method of making sub-lithographic featuresIBM·Filed 2002·Granted Nov 1, 2005·21 cites·11 claims
- 3574US7344983B2Clustered surface preparation for silicide and metal contactsIBM·Filed 2005·Granted Mar 18, 2008·4 cites·5 claims
- 3674US5980770ARemoval of post-RIE polymer on Al/Cu metal lineSIEMENS AG·Filed 1998·Granted Nov 9, 1999·45 cites·10 claims
- 3773US8318565B2High-k dielectric gate structures resistant to oxide growth at the dielectric/silicon substrate interface and methods of manufacture thereofBU HUIMING·Filed 2010·Granted Nov 27, 2012·3 cites·10 claims
- 3870US7851299B2Subgroundrule space for improved metal high-k deviceIBM·Filed 2008·Granted Dec 14, 2010·4 cites·14 claims
- 3970US7212878B2Wafer-to-wafer control using virtual modulesIBM·Filed 2004·Granted May 1, 2007·12 cites·34 claims
- 4070US7049662B2Structure and method to fabricate FinFET devicesIBM·Filed 2003·Granted May 23, 2006·12 cites·9 claims
- 4169US6905941B2Structure and method to fabricate ultra-thin Si channel devicesIBM·Filed 2003·Granted Jun 14, 2005·13 cites·14 claims
- 4268US7384835B2Metal oxide field effect transistor with a sharp halo and a method of forming the transistorIBM·Filed 2006·Granted Jun 10, 2008·3 cites·16 claims
- 4366US7077903B2Etch selectivity enhancement for tunable etch resistant anti-reflective layerIBM·Filed 2003·Granted Jul 18, 2006·9 cites·20 claims
- 4466US6171971B1Freestanding multilayer wiring structureIBM·Filed 1999·Granted Jan 9, 2001·25 cites·24 claims
- 4565US7289864B2Feature dimension deviation correction system, method and program productTOKYO ELECTRON LTD·Filed 2004·Granted Oct 30, 2007·8 cites·30 claims
- 4665US5792275AFilm removal by chemical transformation and aerosol cleanIBM·Filed 1995·Granted Aug 11, 1998·29 cites·9 claims
- 4764US7176534B2Low resistance T-gate MOSFET device using a damascene gate process and an innovative oxide removal etchIBM·Filed 2003·Granted Feb 13, 2007·9 cites·4 claims
- 4864US6617085B1Wet etch reduction of gate widthsIBM·Filed 2002·Granted Sep 9, 2003·11 cites·22 claims
- 4964US5286331ASupersonic molecular beam etching of surfacesIBM·Filed 1991·Granted Feb 15, 1994·31 cites·4 claims
- 5063US7451011B2Process control using physical modules and virtual modulesTOKYO ELECTRON LTD·Filed 2004·Granted Nov 11, 2008·8 cites·36 claims
Showing the top 50 of 76 patent records by PatentIndex Score.
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