Inventor · disambiguated record
Hussein I. Hanafi
Also filed as: HANAFI HUSSEIN I · HANAFI HUSSEIN IBRAHIM
74 granted patents·3 pending applications·3,388 citations·filing 1991–2014
99Inventor score
Files withIBM55MICRON TECHNOLOGY INC17FARRAR PAUL A2HANAFI HUSSEIN I2INTERNAT BUSINSESS MACHINES CO1
Top patents by PatentIndex Score
77 records- 0198US7435636B1Fabrication of self-aligned gallium arsenide MOSFETs using damascene gate methodsMICRON TECHNOLOGY INC·Filed 2007·Granted Oct 14, 2008·89 cites·31 claims
- 0298US7089515B2Threshold voltage roll-off compensation using back-gated MOSFET devices for system high-performance and low standby powerIBM·Filed 2004·Granted Aug 8, 2006·135 cites·13 claims
- 0398US6271094B1Method of making MOSFET with high dielectric constant gate insulator and minimum overlap capacitanceIBM·Filed 2000·Granted Aug 7, 2001·245 cites·31 claims
- 0498US6077745ASelf-aligned diffused source vertical transistors with stack capacitors in a 4F-square memory cell arrayIBM·Filed 1997·Granted Jun 20, 2000·277 cites·14 claims
- 0597US7952184B2Distributed semiconductor device methods, apparatus, and systemsMICRON TECHNOLOGY INC·Filed 2006·Granted May 31, 2011·41 cites·16 claims
- 0697US6660598B2Method of forming a fully-depleted SOI ( silicon-on-insulator) MOSFET having a thinned channel regionIBM·Filed 2002·Granted Dec 9, 2003·137 cites·10 claims
- 0797US5874760A4F-square memory cell having vertical floating-gate transistors with self-aligned shallow trench isolationIBM·Filed 1997·Granted Feb 23, 1999·240 cites·10 claims
- 0896US7875529B2Semiconductor devicesMICRON TECHNOLOGY INC·Filed 2007·Granted Jan 25, 2011·47 cites·13 claims
- 0996US6040210A2F-square memory cell for gigabit memory applicationsIBM·Filed 1998·Granted Mar 21, 2000·101 cites·11 claims
- 1096US5929477ASelf-aligned diffused source vertical transistors with stack capacitors in a 4F-square memory cell arrayIBM·Filed 1997·Granted Jul 27, 1999·192 cites·9 claims
- 1195US6835614B2Damascene double-gate MOSFET with vertical channel regionsIBM·Filed 2003·Granted Dec 28, 2004·100 cites·19 claims
- 1295US5206544ACMOS off-chip driver with reduced signal swing and reduced power supply disturbanceIBM·Filed 1991·Granted Apr 27, 1993·91 cites·18 claims
- 1394US7710765B2Back gated SRAM cellMICRON TECHNOLOGY INC·Filed 2007·Granted May 4, 2010·26 cites·25 claims
- 1494US6841831B2Fully-depleted SOI MOSFETs with low source and drain resistance and minimal overlap capacitance using a recessed channel damascene gate processIBM·Filed 2003·Granted Jan 11, 2005·74 cites·10 claims
- 1593US6337497B1Common source transistor capacitor stackIBM·Filed 1997·Granted Jan 8, 2002·100 cites·3 claims
- 1693US6034389ASelf-aligned diffused source vertical transistors with deep trench capacitors in a 4F-square memory cell arrayIBM·Filed 1997·Granted Mar 7, 2000·154 cites·11 claims
- 1792US7791941B2Non-volatile SRAM cellMICRON TECHNOLOGY INC·Filed 2007·Granted Sep 7, 2010·27 cites·16 claims
- 1892US7633801B2Memory in logic cellMICRON TECHNOLOGY INC·Filed 2007·Granted Dec 15, 2009·19 cites·22 claims
- 1991US8872324B2Distributed semiconductor device methods, apparatus, and systemsMICRON TECHNOLOGY INC·Filed 2014·Granted Oct 28, 2014·8 cites·20 claims
- 2091US6033957A4F-square memory cell having vertical floating-gate transistors with self-aligned shallow trench isolationIBM·Filed 1997·Granted Mar 7, 2000·81 cites·10 claims
- 2190US7056773B2Backgated FinFET having different oxide thicknessesIBM·Filed 2004·Granted Jun 6, 2006·37 cites·22 claims
- 2290US6245619B1Disposable-spacer damascene-gate process for SUB 0.05 μm MOS devicesIBM·Filed 2000·Granted Jun 12, 2001·51 cites·8 claims
- 2389US7018873B2Method of making a device threshold control of front-gate silicon-on-insulator MOSFET using a self-aligned back-gateIBM·Filed 2003·Granted Mar 28, 2006·46 cites·19 claims
- 2489US6440808B1Damascene-gate process for the fabrication of MOSFET devices with minimum poly-gate depletion, silicided source and drain junctions, and low sheet resistance gate-polyIBM·Filed 2000·Granted Aug 27, 2002·48 cites·20 claims
- 2589US6353249B1MOSFET with high dielectric constant gate insulator and minimum overlap capacitanceINTERNAT BUSINSESS MACHINES CO·Filed 2001·Granted Mar 5, 2002·55 cites·10 claims
- 2689US6013548ASelf-aligned diffused source vertical transistors with deep trench capacitors in a 4F-square memory cell arrayIBM·Filed 1997·Granted Jan 11, 2000·99 cites·12 claims
- 2788US7952913B2Back gated SRAM cellMICRON TECHNOLOGY INC·Filed 2010·Granted May 31, 2011·8 cites·25 claims
- 2888US6812527B2Method to control device threshold of SOI MOSFET'sIBM·Filed 2002·Granted Nov 2, 2004·37 cites·9 claims
- 2988US6664598B1Polysilicon back-gated SOI MOSFET for dynamic threshold voltage controlIBM·Filed 2002·Granted Dec 16, 2003·40 cites·9 claims
- 3088US6656824B1Low resistance T-gate MOSFET device using a damascene gate process and an innovative oxide removal etchIBM·Filed 2002·Granted Dec 2, 2003·40 cites·10 claims
- 3188US6562713B1Method of protecting semiconductor areas while exposing a gateIBM·Filed 2002·Granted May 13, 2003·42 cites·10 claims
- 3287US7674669B2FIN field effect transistorMICRON TECHNOLOGY INC·Filed 2007·Granted Mar 9, 2010·23 cites·12 claims
- 3387US7273785B2Method to control device threshold of SOI MOSFET'sIBM·Filed 2004·Granted Sep 25, 2007·34 cites·8 claims
- 3486US8237254B2Distributed semiconductor device methods, apparatus, and systemsFARRAR PAUL A·Filed 2011·Granted Aug 7, 2012·7 cites·18 claims
- 3586US6916694B2Strained silicon-channel MOSFET using a damascene gate processIBM·Filed 2003·Granted Jul 12, 2005·33 cites·11 claims
- 3686US6686630B2Damascene double-gate MOSFET structure and its fabrication methodIBM·Filed 2001·Granted Feb 3, 2004·44 cites·4 claims
- 3785US6093947ARecessed-gate MOSFET with out-diffused source/drain extensionIBM·Filed 1998·Granted Jul 25, 2000·80 cites·8 claims
- 3884US7613031B2System, apparatus, and method to increase read and write stability of scaled SRAM memory cellsMICRON TECHNOLOGY INC·Filed 2007·Granted Nov 3, 2009·17 cites·26 claims
- 3983US6835633B2SOI wafers with 30-100 Å buried oxide (BOX) created by wafer bonding using 30-100 Å thin oxide as bonding layerIBM·Filed 2002·Granted Dec 28, 2004·24 cites·7 claims
- 4083US6635923B2Damascene double-gate MOSFET with vertical channel regionsIBM·Filed 2001·Granted Oct 21, 2003·28 cites·11 claims
- 4182US6815296B2Polysilicon back-gated SOI MOSFET for dynamic threshold voltage controlIBM·Filed 2003·Granted Nov 9, 2004·28 cites·8 claims
- 4281US7732286B2Buried biasing wells in FETs (Field Effect Transistors)IBM·Filed 2007·Granted Jun 8, 2010·7 cites·24 claims
- 4379US6218236B1Method of forming a buried bitline in a vertical DRAM deviceIBM·Filed 1999·Granted Apr 17, 2001·36 cites·14 claims
- 4478US7723196B2Damascene gate field effect transistor with an internal spacer structureIBM·Filed 2009·Granted May 25, 2010·6 cites·7 claims
- 4578US7214972B2Strained silicon-channel MOSFET using a damascene gate processIBM·Filed 2005·Granted May 8, 2007·6 cites·10 claims
- 4677US7955917B2Fabrication of self-aligned gallium arsenide MOSFETS using damascene gate methodsMICRON TECHNOLOGY INC·Filed 2008·Granted Jun 7, 2011·5 cites·20 claims
- 4777US7476946B2Backgated FinFET having different oxide thicknessesIBM·Filed 2006·Granted Jan 13, 2009·5 cites·12 claims
- 4877US6258679B1Sacrificial silicon sidewall for damascene gate formationIBM·Filed 1999·Granted Jul 10, 2001·41 cites·24 claims
- 4976US8242555B2FIN field effect transistorHANAFI HUSSEIN I·Filed 2010·Granted Aug 14, 2012·8 cites·17 claims
- 5076US6143635AField effect transistors with improved implants and method for making such transistorsIBM·Filed 1999·Granted Nov 7, 2000·37 cites·29 claims
Showing the top 50 of 77 patent records by PatentIndex Score.
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