Inventor · disambiguated record
Yen-Hao Shih
Also filed as: SHIH YEN-HAO
97 granted patents·6 pending applications·1,860 citations·filing 2000–2015
99Inventor score
Top patents by PatentIndex Score
103 records- 0199US8426294B23D memory array arranged for FN tunneling program and eraseLUNG HSIANG-LAN·Filed 2012·Granted Apr 23, 2013·165 cites·18 claims
- 0299US8203187B23D memory array arranged for FN tunneling program and eraseLUNG HSIANG-LAN·Filed 2010·Granted Jun 19, 2012·309 cites·24 claims
- 0398US8759899B1Integration of 3D stacked IC device with peripheral circuitsLUE HANG-TING·Filed 2013·Granted Jun 24, 2014·86 cites·8 claims
- 0498US8437192B23D two bit-per-cell NAND flash memoryLUNG HSIANG-LAN·Filed 2010·Granted May 7, 2013·61 cites·13 claims
- 0598US7450423B2Methods of operating non-volatile memory cells having an oxide/nitride multilayer insulating structureMACRONIX INT CO LTD·Filed 2007·Granted Nov 11, 2008·278 cites·24 claims
- 0697US7554873B2Three-dimensional memory devices and methods of manufacturing and operating the sameMACRONIX INT CO LTD·Filed 2006·Granted Jun 30, 2009·44 cites·13 claims
- 0797US7133313B2Operation scheme with charge balancing for charge trapping non-volatile memoryMACRONIX INT CO LTD·Filed 2004·Granted Nov 7, 2006·121 cites·86 claims
- 0896US7209390B2Operation scheme for spectrum shift in charge trapping non-volatile memoryMACRONIX INT CO LTD·Filed 2004·Granted Apr 24, 2007·111 cites·39 claims
- 0995US8946666B2Ge-Rich GST-212 phase change memory materialsCHENG HUAI-YU·Filed 2011·Granted Feb 3, 2015·16 cites·12 claims
- 1095US7811890B2Vertical channel transistor structure and manufacturing method thereofMACRONIX INT CO LTD·Filed 2006·Granted Oct 12, 2010·35 cites·10 claims
- 1194US8633099B1Method for forming interlayer connectors in a three-dimensional stacked IC deviceSHIH YEN-HAO·Filed 2012·Granted Jan 21, 2014·30 cites·19 claims
- 1294US7164603B2Operation scheme with high work function gate and charge balancing for charge trapping non-volatile memorySHIH YEN-HAO·Filed 2004·Granted Jan 16, 2007·99 cites·16 claims
- 1394US7075828B2Operation scheme with charge balancing erase for charge trapping non-volatile memoryMACRONIX INTERNAT CO INTL·Filed 2004·Granted Jul 11, 2006·123 cites·60 claims
- 1493US9224750B1Multi-layer memory array and manufacturing method of the sameMACRONIX INT CO LTD·Filed 2014·Granted Dec 29, 2015·11 cites·9 claims
- 1592US8363463B2Phase change memory having one or more non-constant doping profilesMACRONIX INT CO LTD·Filed 2010·Granted Jan 29, 2013·16 cites·10 claims
- 1692US7701750B2Phase change device having two or more substantial amorphous regions in high resistance stateMACRONIX INT CO LTD·Filed 2008·Granted Apr 20, 2010·21 cites·26 claims
- 1792US7242622B2Methods to resolve hard-to-erase condition in charge trapping non-volatile memoryMACRONIX INT CO LTD·Filed 2006·Granted Jul 10, 2007·24 cites·18 claims
- 1891US8987914B2Conductor structure and methodMACRONIX INT CO LTD·Filed 2013·Granted Mar 24, 2015·7 cites·27 claims
- 1991US8704205B2Semiconductor structure with improved capacitance of bit lineCHEN SHIH-HUNG·Filed 2012·Granted Apr 22, 2014·13 cites·15 claims
- 2091US8238149B2Methods and apparatus for reducing defect bits in phase change memorySHIH YEN-HAO·Filed 2010·Granted Aug 7, 2012·15 cites·20 claims
- 2190US9431417B1Semiconductor structure and method for manufacturing the sameMACRONIX INT CO LTD·Filed 2015·Granted Aug 30, 2016·7 cites·12 claims
- 2290US9099538B2Conductor with a plurality of vertical extensions for a 3D deviceMACRONIX INT CO LTD·Filed 2013·Granted Aug 4, 2015·11 cites·15 claims
- 2390US8634235B2Phase change memory codingLUNG HSIANG-LAN·Filed 2010·Granted Jan 21, 2014·13 cites·22 claims
- 2490US8426242B2Composite target sputtering for forming doped phase change materialsCHENG HUAI-YU·Filed 2011·Granted Apr 23, 2013·11 cites·20 claims
- 2589US8772747B2Composite target sputtering for forming doped phase change materialsMACRONIX INT CO LTD·Filed 2013·Granted Jul 8, 2014·8 cites·10 claims
- 2689US7053406B1One-time programmable read only memory and manufacturing method thereofMACRONIX INT CO LTD·Filed 2005·Granted May 30, 2006·20 cites·10 claims
- 2788US8951862B2Damascene word lineCHEN SHIH-HUNG·Filed 2012·Granted Feb 10, 2015·10 cites·15 claims
- 2887US8574992B2Contact architecture for 3D memory arrayCHEN SHIH-HUNG·Filed 2011·Granted Nov 5, 2013·9 cites·26 claims
- 2987US8324605B2Dielectric mesh isolated phase change structure for phase change memoryLUNG HSIANG-LAN·Filed 2008·Granted Dec 4, 2012·16 cites·21 claims
- 3086US8406033B2Memory device and method for sensing and fixing margin cellsLUNG HSIANG-LAN·Filed 2009·Granted Mar 26, 2013·17 cites·12 claims
- 3186US7314815B2Manufacturing method of one-time programmable read only memoryMACRONIX INT CO LTD·Filed 2006·Granted Jan 1, 2008·11 cites·8 claims
- 3285US9281315B1Memory structure and method for manufacturing the sameMACRONIX INT CO LTD·Filed 2015·Granted Mar 8, 2016·5 cites·20 claims
- 3385US9082656B2NAND flash with non-trapping switch transistorsCHEN SHIH-HUNG·Filed 2011·Granted Jul 14, 2015·5 cites·7 claims
- 3483US7973366B2Dual-gate, sonos, non-volatile memory cells and arrays thereofMACRONIX INT CO LTD·Filed 2006·Granted Jul 5, 2011·10 cites·13 claims
- 3581US8987098B2Damascene word lineCHEN SHIH-HUNG·Filed 2012·Granted Mar 24, 2015·4 cites·19 claims
- 3680US8026136B2Methods of forming low hydrogen concentration charge-trapping layer structures for non-volatile memoryMACRONIX INT CO LTD·Filed 2007·Granted Sep 27, 2011·7 cites·20 claims
- 3778US9741731B2Three dimensional stacked semiconductor structureMACRONIX INT CO LTD·Filed 2014·Granted Aug 22, 2017·3 cites·11 claims
- 3878US9019771B2Dielectric charge trapping memory cells with redundancyLUNG HSIANG-LAN·Filed 2012·Granted Apr 28, 2015·6 cites·14 claims
- 3978US8374019B2Phase change memory with fast write characteristicsMACRONIX INT CO LTD·Filed 2011·Granted Feb 12, 2013·6 cites·23 claims
- 4078US7355897B2Methods to resolve hard-to-erase condition in charge trapping non-volatile memoryMACRONIX INT CO LTD·Filed 2007·Granted Apr 8, 2008·9 cites·9 claims
- 4177US9425191B2Memory device and manufacturing method of the sameMACRONIX INT CO LTD·Filed 2013·Granted Aug 23, 2016·4 cites·18 claims
- 4277US9419010B2High aspect ratio etching methodMACRONIX INT CO LTD·Filed 2014·Granted Aug 16, 2016·3 cites·16 claims
- 4377US7795088B2Method for manufacturing memory cellMACRONIX INT CO LTD·Filed 2007·Granted Sep 14, 2010·7 cites·16 claims
- 4476US9252156B2Conductor structure and methodMACRONIX INT CO LTD·Filed 2015·Granted Feb 2, 2016·2 cites·20 claims
- 4576US8907316B2Memory cell access device having a pn-junction with polycrystalline and single crystal semiconductor regionsLUNG HSIANG-LAN·Filed 2008·Granted Dec 9, 2014·6 cites·31 claims
- 4674US9136277B2Three dimensional stacked semiconductor structure and method for manufacturing the sameMACRONIX INT CO LTD·Filed 2012·Granted Sep 15, 2015·3 cites·21 claims
- 4773US7911856B2Three-dimensional memory devices and methods of manufacturing and operating the sameMACRONIX INT CO LTD·Filed 2009·Granted Mar 22, 2011·3 cites·9 claims
- 4871US7414282B2Method of manufacturing a non-volatile memory deviceMACRONIX INT CO LTD·Filed 2005·Granted Aug 19, 2008·3 cites·17 claims
- 4967US9246015B2Vertical channel transistor structure and manufacturing method thereofHSU TZU-HSUAN·Filed 2010·Granted Jan 26, 2016·2 cites·6 claims
- 5066US9123778B2Damascene conductor for 3D arrayMACRONIX INT CO LTD·Filed 2013·Granted Sep 1, 2015·2 cites·13 claims
Showing the top 50 of 103 patent records by PatentIndex Score.
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