Inventor · disambiguated record
Shukun Qi
Also filed as: QI SHUKUN
10 granted patents·8 citations·filing 2015–2018
79Inventor score
Top patents by PatentIndex Score
10 records- 0181US10014392B2Laterally diffused metal-oxide-semiconductor field-effect transistorCSMC TECHNOLOGIES FAB2 CO LTD·Filed 2016·Granted Jul 3, 2018·4 cites·7 claims
- 0275US10084073B2Lateral insulated-gate bipolar transistor and manufacturing method thereforCSMC TECHNOLOGIES FAB1 CO LTD·Filed 2015·Granted Sep 25, 2018·3 cites·14 claims
- 0366US11088253B2Gate structure of semiconductor device and manufacturing method thereforCSMC TECHNOLOGIES FAB2 CO LTD·Filed 2018·Granted Aug 10, 2021·1 cites·20 claims
- 0442US10770572B2Lateral insulated-gate bipolar transistor and manufacturing method thereforCSMC TECHNOLOGIES FAB2 CO LTD·Filed 2017·Granted Sep 8, 2020·0 cites·8 claims
- 0541US10199495B2Laterally diffused metal-oxide semiconductor field-effect transistorCSMC TECHNOLOGIES FAB2 CO LTD·Filed 2016·Granted Feb 5, 2019·0 cites·9 claims
- 0641US9905680B2Lateral insulated-gate bipolar transistorCSMC TECHNOLOGIES FAB1 CO LTD·Filed 2015·Granted Feb 27, 2018·0 cites·10 claims
- 0740US11315824B2Trench isolation structure and manufacturing method thereforCSMC TECHNOLOGIES FAB2 CO LTD·Filed 2018·Granted Apr 26, 2022·0 cites·18 claims
- 0840US11127840B2Method for manufacturing isolation structure for LDMOSCSMC TECHNOLOGIES FAB2 CO LTD·Filed 2018·Granted Sep 21, 2021·0 cites·20 claims
- 0936US10249707B2Laterally diffused metal oxide semiconductor field-effect transistor and manufacturing method thereforCSMC TECHNOLOGIES FAB2 CO LTD·Filed 2016·Granted Apr 2, 2019·0 cites·13 claims
- 1034US10505036B2Lateral diffused metal oxide semiconductor field effect transistorCSMC TECHNOLOGIES FAB2 CO LTD·Filed 2016·Granted Dec 10, 2019·0 cites·10 claims
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