Inventor · disambiguated record
Hoosung Cho
Also filed as: CHO HOOSUNG
21 granted patents·3 pending applications·239 citations·filing 2009–2024
95Inventor score
Top patents by PatentIndex Score
24 records- 0197US11871571B2Nonvolatile memory device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jan 9, 2024·2 cites·10 claims
- 0297US8541831B2Nonvolatile memory device and method for fabricating the sameCHAE SOODOO·Filed 2009·Granted Sep 24, 2013·68 cites·10 claims
- 0397US8395190B2Three-dimensional semiconductor memory deviceSHIM SUNIL·Filed 2010·Granted Mar 12, 2013·40 cites·20 claims
- 0496US11456335B2Vertical memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Sep 27, 2022·6 cites·20 claims
- 0596US9735170B2Nonvolatile memory device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Aug 15, 2017·10 cites·16 claims
- 0695US9887199B2Semiconductor devices including a peripheral circuit region and first and second memory regions, and related programming methodsLIM JOON SUNG·Filed 2015·Granted Feb 6, 2018·17 cites·10 claims
- 0795US8203211B2Nonvolatile memory devices having a three dimensional structureJEONG JAEHUN·Filed 2010·Granted Jun 19, 2012·22 cites·9 claims
- 0894US9245839B2Nonvolatile memory device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jan 26, 2016·11 cites·13 claims
- 0993US8921918B2Three-dimensional semiconductor devicesSHIM JAE-JOO·Filed 2011·Granted Dec 30, 2014·22 cites·20 claims
- 1091US10546872B2Nonvolatile memory device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jan 28, 2020·4 cites·19 claims
- 1190US10763222B2Three-dimensional semiconductor devices having vertical structures of different lengthsSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Sep 1, 2020·8 cites·20 claims
- 1289US9111799B2Semiconductor device with a pick-up regionHWANG SUNG-MIN·Filed 2011·Granted Aug 18, 2015·11 cites·20 claims
- 1387US12464721B2Nonvolatile memory device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Granted Nov 4, 2025·0 cites·20 claims
- 1487US11387249B2Nonvolatile memory device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jul 12, 2022·2 cites·20 claims
- 1587US8896123B2Nonvolatile memory devices having a three dimensional structureJEONG JAEHUN·Filed 2012·Granted Nov 25, 2014·7 cites·9 claims
- 1687US2024164103A1Nonvolatile memory device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1786US8603906B2Method of forming a three-dimensional semiconductor memory device comprising sub-cells, terraced structures and strapping regionsSHIM SUNIL·Filed 2013·Granted Dec 10, 2013·6 cites·12 claims
- 1881US12490433B2Nonvolatile memory device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Dec 2, 2025·0 cites·17 claims
- 1978US12336177B2Nonvolatile memory device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jun 17, 2025·0 cites·12 claims
- 2066US9184174B2Semiconductor devices and methods of fabricating semiconductor devicesYUN JANG-GN·Filed 2014·Granted Nov 10, 2015·2 cites·20 claims
- 2165US10431593B2Three-dimensional semiconductor memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Oct 1, 2019·1 cites·19 claims
- 2257US9219072B2Nonvolatile memory devices having a three dimensional structure utilizing strapping of a common source region and/or a well regionSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Dec 22, 2015·0 cites·8 claims
- 2344US2015084204A1Semiconductor device and method of fabricating the sameYUN JANG-GN·Filed 2014·Application pending·0 cites
- 2438US2013020647A1Semiconductor devices and methods of fabricating the sameHWANG SUNG-MIN·Filed 2012·Application pending·0 cites
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