Inventor · disambiguated record
Lung-Han Peng
Also filed as: PENG LUNG-HAN
22 granted patents·5 pending applications·132 citations·filing 1997–2019
94Inventor score
Top patents by PatentIndex Score
27 records- 0188US8409892B2Method of selective photo-enhanced wet oxidation for nitride layer regrowth on substratesPENG LUNG-HAN·Filed 2011·Granted Apr 2, 2013·9 cites·20 claims
- 0285US7253061B2Method of forming a gate insulator in group III-V nitride semiconductor devicesTEKCORE CO LTD·Filed 2004·Granted Aug 7, 2007·30 cites·9 claims
- 0383US8809832B1Method of selective photo-enhanced wet oxidation for nitride layer regrowth on substrates and associated structureOPTO TECH CORP·Filed 2013·Granted Aug 19, 2014·4 cites·14 claims
- 0482US7977254B2Method of forming a gate insulator in group III-V nitride semiconductor devicesTEKCORE CO LTD·Filed 2007·Granted Jul 12, 2011·7 cites·10 claims
- 0576US10923633B2Top-emitting light-emitting diodeOPTO TECH CORP·Filed 2019·Granted Feb 16, 2021·1 cites·12 claims
- 0675US5895223AMethod for etching nitrideIND TECH RES INST·Filed 1997·Granted Apr 20, 1999·46 cites·15 claims
- 0774US8981373B1White LEDPENG LUNG-HAN·Filed 2014·Granted Mar 17, 2015·2 cites·23 claims
- 0873US7884345B2Phase-change material, memory unit and method for electrically storing/reading dataUNIV NAT TAIWAN·Filed 2008·Granted Feb 8, 2011·2 cites·20 claims
- 0968US10050156B1Resistive memory elementOPTO TECH CORP·Filed 2017·Granted Aug 14, 2018·3 cites·9 claims
- 1066US6926770B2Method of fabricating two-dimensional ferroelectric nonlinear crystals with periodically inverted domainsUNIV NAT TAIWAN·Filed 2003·Granted Aug 9, 2005·8 cites·7 claims
- 1164US9786842B1Memory cell with functions of storage element and selectorOPTO TECH CORP·Filed 2016·Granted Oct 10, 2017·3 cites·12 claims
- 1262US9923119B2White LED chip and white LED packaging deviceOPTO TECH CORP·Filed 2014·Granted Mar 20, 2018·1 cites·16 claims
- 1358US8871546B2Method of selective photo-enhanced wet oxidation for nitride layer regrowth on substrates and associated structureOPTO TECH CORP·Filed 2014·Granted Oct 28, 2014·0 cites·2 claims
- 1457US6190508B1Method of oxidizing nitride material enhanced by illumination with UV light at room temperatureIND TECH RES INST·Filed 1999·Granted Feb 20, 2001·14 cites·11 claims
- 1556US9583675B1White LEDOPTO TECH CORP·Filed 2016·Granted Feb 28, 2017·1 cites·12 claims
- 1654US8679883B2Method of separating nitride films from growth substrates by selective photo-enhanced wet oxidation and associated semiconductor structureOPTO TECH CORP·Filed 2013·Granted Mar 25, 2014·0 cites·12 claims
- 1749US8481353B2Method of separating nitride films from the growth substrates by selective photo-enhanced wet oxidationPENG LUNG-HAN·Filed 2011·Granted Jul 9, 2013·0 cites·13 claims
- 1847US9972746B2Substrate with lithium imide layer, LED with lithium imide layer and manufacturing method thereofOPTO TECH CORP·Filed 2017·Granted May 15, 2018·0 cites·5 claims
- 1946US7022597B2Method for manufacturing gallium nitride based transparent conductive oxidized film ohmic electrodesTEKCORE CO LTD·Filed 2004·Granted Apr 4, 2006·1 cites·7 claims
- 2045US2011057185A1Thin film transistorUNIV NAT TAIWAN·Filed 2009·Application pending·0 cites
- 2143US2009026471A1Light-scattering structure, light emitting device comprising the same and method of forming the sameNOETON OPTOELECTRONICS CORP·Filed 2007·Application pending·0 cites
- 2239US2013258293A1Phase Modulation Module and Projector Comprising the SameTOUCH MICRO SYSTEM TECH·Filed 2013·Application pending·0 cites
- 2339US2011149399A1Anti-reflection structure and method for fabricating the sameUNIV NAT TAIWAN·Filed 2010·Application pending·0 cites
- 2438US8587862B2Second-harmonic generation nonliner frenquency converterLIOU JIUN-WEI·Filed 2011·Granted Nov 19, 2013·0 cites·9 claims
- 2536US10586831B1Light emitting diode memoryOPTO TECH CORP·Filed 2019·Granted Mar 10, 2020·0 cites·10 claims
- 2635US2011116519A1Apparatus and method for converting laser energyUNIV NAT TAIWAN·Filed 2010·Application pending·0 cites
- 2730US8487325B2Light emitting diode with large viewing angle and fabricating method thereofLIN CHEN-YEN·Filed 2012·Granted Jul 16, 2013·0 cites·17 claims
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