Inventor · disambiguated record
Srivatsa Kundalgurki
Also filed as: KUNDALGURKI SRIVATSA · KUNDALGURKI SRIVATSA G
16 granted patents·2 pending applications·44 citations·filing 2003–2016
90Inventor score
Files withINFINEON TECHNOLOGIES AG8FREESCALE SEMICONDUCTOR INC4KUNDALGURKI SRIVATSA G3NOVELLUS SYSTEMS INC1QIMONDA AG1
Top patents by PatentIndex Score
18 records- 0175US9583665B2PIN diode with nanoclustersKUNDALGURKI SRIVATSA G·Filed 2014·Granted Feb 28, 2017·2 cites·18 claims
- 0269US7018893B1Method for fabricating bottom electrodes of stacked capacitor memory cellsINFINEON TECHNOLOGIES AG·Filed 2004·Granted Mar 28, 2006·16 cites·20 claims
- 0366US8709848B2Method for etched cavity devicesKUNDALGURKI SRIVATSA G·Filed 2011·Granted Apr 29, 2014·2 cites·20 claims
- 0465US7863149B2Method for fabricating a capacitorQIMONDA AG·Filed 2005·Granted Jan 4, 2011·3 cites·21 claims
- 0562US7259061B2Method for forming a capacitor for an integrated circuit and integrated circuitINFINEON TECHNOLOGIES AG·Filed 2004·Granted Aug 21, 2007·8 cites·17 claims
- 0661US7284558B2Enhanced megasonic based clean using an alternative cleaning chemistryINFINEON TECHNOLOGIES AG·Filed 2005·Granted Oct 23, 2007·1 cites·18 claims
- 0760US9897564B2Systems and methods for detecting change in species in an environmentFREESCALE SEMICONDUCTOR INC·Filed 2016·Granted Feb 20, 2018·0 cites·13 claims
- 0856US7005385B2Method for removing a resist mask with high selectivity to a carbon hard mask used for semiconductor structuringINFINEON TECHNOLOGIES AG·Filed 2003·Granted Feb 28, 2006·5 cites·13 claims
- 0954US7208095B2Method for fabricating bottom electrodes of stacked capacitor memory cells and method for cleaning and drying a semiconductor waferINFINEON TECHNOLOGIES AG·Filed 2004·Granted Apr 24, 2007·4 cites·21 claims
- 1054US2013313668A1Photronic device with reflector and method for formingSPENCER GREGORY S·Filed 2012·Application pending·0 cites
- 1152US7579253B2Method for cleaning a semiconductor waferINFINEON TECHNOLOGIES AG·Filed 2007·Granted Aug 25, 2009·0 cites·21 claims
- 1251US9663356B2Etch release residue removal using anhydrous solutionFREESCALE SEMICONDUCTOR INC·Filed 2014·Granted May 30, 2017·0 cites·17 claims
- 1349US9658199B2Systems and methods for detecting change in species in an environmentFREESCALE SEMICONDUCTOR INC·Filed 2015·Granted May 23, 2017·0 cites·18 claims
- 1448US7319223B2Method and apparatus for characterizing a recess located on a surface of a substrateINFINEON TECHNOLOGIES AG·Filed 2004·Granted Jan 15, 2008·0 cites·25 claims
- 1547US9658180B2Systems and methods for detecting change in species in an environmentFREESCALE SEMICONDUCTOR INC·Filed 2015·Granted May 23, 2017·0 cites·13 claims
- 1645US2006032516A1Method for the recovery of ash rate following metal etchingNOVELLUS SYSTEMS INC·Filed 2004·Application pending·0 cites
- 1743US7084029B2Method for fabricating a hole trench storage capacitor in a semiconductor substrate, and hole trench storage capacitorINFINEON TECHNOLOGIES AG·Filed 2004·Granted Aug 1, 2006·3 cites·17 claims
- 1829US8993451B2Etching trenches in a substrateKUNDALGURKI SRIVATSA G·Filed 2011·Granted Mar 31, 2015·0 cites·17 claims
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