Inventor · disambiguated record
Masanori Hayashikoshi
Also filed as: HAYASHIKOSHI MASANORI
34 granted patents·1,332 citations·filing 1988–2014
98Inventor score
Top patents by PatentIndex Score
34 records- 0195US5297096ANonvolatile semiconductor memory device and data erasing method thereofMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Mar 22, 1994·135 cites·55 claims
- 0294US4970727ASemiconductor integrated circuit having multiple self-test functions and operating method thereforMITSUBISHI ELECTRIC CORP·Filed 1988·Granted Nov 13, 1990·95 cites·8 claims
- 0393US5499214AOscillator circuit generating a clock signal having a temperature dependent cycle and a semiconductor memory device including the sameMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Mar 12, 1996·81 cites·13 claims
- 0491US5249155ASemiconductor device incorporating internal voltage down converting circuitMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Sep 28, 1993·81 cites·35 claims
- 0590US5347490ANonvolatile semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Sep 13, 1994·77 cites·36 claims
- 0688US6097180AVoltage supply circuit and semiconductor device including such circuitMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Aug 1, 2000·44 cites·18 claims
- 0788US5321646ALayout of a semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Jun 14, 1994·68 cites·40 claims
- 0887US5600281AOscillator circuit generating a clock signal having a temperature dependent cycle and a semiconductor memory device including the sameMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Feb 4, 1997·61 cites·9 claims
- 0987US5283758ANon-volatile semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Feb 1, 1994·67 cites·17 claims
- 1086US6011428AVoltage supply circuit and semiconductor device including such circuitMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Jan 4, 2000·43 cites·26 claims
- 1185USRE36089EColumn selecting circuit in semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Feb 9, 1999·52 cites·14 claims
- 1285US5233610ASemiconductor memory device having error correcting functionMITSUBISHI ELECTRIC CORP·Filed 1990·Granted Aug 3, 1993·109 cites·26 claims
- 1380US9977664B2Information processing device and information processing method in heterogenous multi-cores having different architecturesRENESAS ELECTRONICS CORP·Filed 2014·Granted May 22, 2018·9 cites·9 claims
- 1479US5132928ADivided word line type non-volatile semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1990·Granted Jul 21, 1992·78 cites·22 claims
- 1578US5544117ANon-volatile semiconductor memory device with improved collective erasing operationMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Aug 6, 1996·40 cites·26 claims
- 1677US6337814B1Semiconductor memory device having reference potential generating circuitMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Jan 8, 2002·25 cites·7 claims
- 1773US5465063APulse generating circuit with temperature compensationMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Nov 7, 1995·22 cites·10 claims
- 1871US5691661APulse generating circuit and a semiconductor memory device provided with the sameMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Nov 25, 1997·27 cites·9 claims
- 1970US5617362ASemiconductor memory device having extended data out functionMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Apr 1, 1997·25 cites·5 claims
- 2069US5532961ASemiconductor memory device having extended data out functionMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Jul 2, 1996·23 cites·7 claims
- 2168US10108249B2Memory control circuitRENESAS ELECTRONICS CORP·Filed 2014·Granted Oct 23, 2018·2 cites·12 claims
- 2265US6088819ADynamic semiconductor memory device and method of testing the sameMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Jul 11, 2000·25 cites·8 claims
- 2364US8508986B2Semiconductor deviceTANIZAKI HIROAKI·Filed 2011·Granted Aug 13, 2013·3 cites·10 claims
- 2464US5315548AColumn selecting circuit in semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1992·Granted May 24, 1994·20 cites·12 claims
- 2563US5956281ASemiconductor memory device capable of setting substrate voltage shallow in disturb test mode and self refresh modeMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Sep 21, 1999·22 cites·7 claims
- 2656US5835419ASemiconductor memory device with clamping circuit for preventing malfunctionMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Nov 10, 1998·17 cites·14 claims
- 2756US5666317ASemiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Sep 9, 1997·14 cites·3 claims
- 2856US5574691ASemiconductor memory device having circuit for activating predetermined rows of memory cells upon detection of disturb refresh testMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Nov 12, 1996·14 cites·11 claims
- 2955US6304503B1Semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Oct 16, 2001·13 cites·4 claims
- 3050US5519659ASemiconductor memory device having circuit for activating predetermined rows of memory cells upon detection of disturb refresh testMITSUBISHI ELECTRIC CORP·Filed 1995·Granted May 21, 1996·13 cites·3 claims
- 3147US6483761B2Semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Nov 19, 2002·4 cites·4 claims
- 3245US5554868ANon-volatile semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Sep 10, 1996·10 cites·7 claims
- 3343US5986915ASemiconductor memory device capable of preventing malfunction due to disconnection of column select line or word select lineMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Nov 16, 1999·7 cites·3 claims
- 3440US5825694ASemiconductor memory device capable of preventing malfunction due to disconnection of column select line or word select lineMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Oct 20, 1998·6 cites·7 claims
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