Inventor · disambiguated record
Emi Ishida
Also filed as: ISHIDA EMI
40 granted patents·1 pending application·1,466 citations·filing 1992–2004
98Inventor score
Files withADVANCED MICRO DEVICES INC38DAIICHI SEIYAKU CO1TOKUYAMA DENTAL CORP1UNIV LELAND STANFORD JUNIOR1
Top patents by PatentIndex Score
41 records- 0197US6426279B1Epitaxial delta doping for retrograde channel profileADVANCED MICRO DEVICES INC·Filed 2000·Granted Jul 30, 2002·167 cites·11 claims
- 0296US6506640B1Multiple channel implantation to form retrograde channel profile and to engineer threshold voltage and sub-surface punch-throughADVANCED MICRO DEVICES INC·Filed 2000·Granted Jan 14, 2003·129 cites·5 claims
- 0396US6444550B1Laser tailoring retrograde channel profile in surfacesADVANCED MICRO DEVICES INC·Filed 2000·Granted Sep 3, 2002·135 cites·12 claims
- 0487US6472283B1MOS transistor processing utilizing UV-nitride removable spacer and HF etchADVANCED MICRO DEVICES INC·Filed 2000·Granted Oct 29, 2002·51 cites·19 claims
- 0587US6344396B1Removable spacer technology using ion implantation for forming asymmetric MOS transistorsADVANCED MICRO DEVICES INC·Filed 2000·Granted Feb 5, 2002·51 cites·18 claims
- 0684US6100171AReduction of boron penetration by laser anneal removal of fluorineADVANCED MICRO DEVICES INC·Filed 1998·Granted Aug 8, 2000·70 cites·20 claims
- 0782US7041714B2Dental adhesiveTOKUYAMA DENTAL CORP·Filed 2002·Granted May 9, 2006·12 cites·9 claims
- 0882US6756600B2Ion implantation with improved ion source life expectancyADVANCED MICRO DEVICES INC·Filed 1999·Granted Jun 29, 2004·42 cites·22 claims
- 0982US6514833B1Method of inhibiting lateral diffusion between adjacent wells by introducing carbon or fluorine ions into bottom of STI grooveADVANCED MICRO DEVICES INC·Filed 2000·Granted Feb 4, 2003·34 cites·20 claims
- 1082US6475868B1Oxygen implantation for reduction of junction capacitance in MOS transistorsADVANCED MICRO DEVICES INC·Filed 2000·Granted Nov 5, 2002·29 cites·14 claims
- 1182US6429083B1Removable spacer technology using ion implantation to augment etch rate differences of spacer materialsADVANCED MICRO DEVICES INC·Filed 2000·Granted Aug 6, 2002·32 cites·31 claims
- 1282US6180468B1Very low thermal budget channel implant process for semiconductorsADVANCED MICRO DEVICES INC·Filed 1998·Granted Jan 30, 2001·48 cites·18 claims
- 1379US6337260B1Use of knocked-on oxygen atoms for reduction of transient enhanced diffusionADVANCED MICRO DEVICES INC·Filed 2000·Granted Jan 8, 2002·21 cites·18 claims
- 1479US6051473AFabrication of raised source-drain transistor devicesADVANCED MICRO DEVICES INC·Filed 1996·Granted Apr 18, 2000·45 cites·9 claims
- 1577US6403433B1Source/drain doping technique for ultra-thin-body SOI MOS transistorsADVANCED MICRO DEVICES INC·Filed 1999·Granted Jun 11, 2002·49 cites·15 claims
- 1673US5966605AReduction of poly depletion in semiconductor integrated circuitsADVANCED MICRO DEVICES INC·Filed 1997·Granted Oct 12, 1999·43 cites·17 claims
- 1772US5885904AMethod to incorporate, and a device having, oxide enhancement dopants using gas immersion laser doping (GILD) for selectively growing an oxide layerADVANCED MICRO DEVICES INC·Filed 1997·Granted Mar 23, 1999·40 cites·25 claims
- 1871US6190980B1Method of tilted implant for pocket, halo and source/drain extension in ULSI dense structuresADVANCED MICRO DEVICES INC·Filed 1998·Granted Feb 20, 2001·38 cites·19 claims
- 1970US6410393B1Semiconductor device with asymmetric channel dopant profileADVANCED MICRO DEVICES INC·Filed 2000·Granted Jun 25, 2002·13 cites·9 claims
- 2070US6372582B1Indium retrograde channel doping for improved gate oxide reliabilityADVANCED MICRO DEVICES INC·Filed 2000·Granted Apr 16, 2002·13 cites·13 claims
- 2170US6342423B1MOS-type transistor processing utilizing UV-nitride removable spacer and HF etchADVANCED MICRO DEVICES INC·Filed 2000·Granted Jan 29, 2002·16 cites·19 claims
- 2270US6074937AEnd-of-range damage suppression for ultra-shallow junction formationADVANCED MICRO DEVICES INC·Filed 1998·Granted Jun 13, 2000·37 cites·16 claims
- 2370US5937325AFormation of low resistivity titanium silicide gates in semiconductor integrated circuitsADVANCED MICRO DEVICES INC·Filed 1997·Granted Aug 10, 1999·37 cites·14 claims
- 2469US6482725B1Gate formation method for reduced poly-depletion and boron penetrationADVANCED MICRO DEVICES INC·Filed 2000·Granted Nov 19, 2002·16 cites·16 claims
- 2567US6040019AMethod of selectively annealing damaged doped regionsADVANCED MICRO DEVICES INC·Filed 1997·Granted Mar 21, 2000·32 cites·23 claims
- 2665US6143632ADeuterium doping for hot carrier reliability improvementADVANCED MICRO DEVICES INC·Filed 1997·Granted Nov 7, 2000·24 cites·6 claims
- 2765US5998272ASilicidation and deep source-drain formation prior to source-drain extension formationADVANCED MICRO DEVICES INC·Filed 1996·Granted Dec 7, 1999·30 cites·16 claims
- 2864US6423601B1Retrograde well structure formation by nitrogen implantationADVANCED MICRO DEVICES INC·Filed 2000·Granted Jul 23, 2002·9 cites·19 claims
- 2964US5904575AMethod and apparatus incorporating nitrogen selectively for differential oxide growthADVANCED MICRO DEVICES INC·Filed 1997·Granted May 18, 1999·28 cites·42 claims
- 3064US5316969AMethod of shallow junction formation in semiconductor devices using gas immersion laser dopingUNIV LELAND STANFORD JUNIOR·Filed 1992·Granted May 31, 1994·35 cites·19 claims
- 3162US6395606B1MOSFET with metal in gate for reduced gate resistanceADVANCED MICRO DEVICES INC·Filed 1999·Granted May 28, 2002·21 cites·11 claims
- 3262US6265291B1Circuit fabrication method which optimizes source/drain contact resistanceADVANCED MICRO DEVICES INC·Filed 1999·Granted Jul 24, 2001·25 cites·20 claims
- 3358US6455385B1Semiconductor fabrication with multiple low dose implantADVANCED MICRO DEVICES INC·Filed 1998·Granted Sep 24, 2002·22 cites·14 claims
- 3458US6355528B1Method to form narrow structure using double-damascene processADVANCED MICRO DEVICES INC·Filed 1999·Granted Mar 12, 2002·21 cites·13 claims
- 3552US2007112176A1Lipid membrane structure containing anti-mt-mmp monoclonal antibodyDAIICHI SEIYAKU CO·Filed 2004·Application pending·0 cites
- 3647US6277698B1Method of manufacturing semiconductor devices having uniform, fully doped gate electrodesADVANCED MICRO DEVICES INC·Filed 1999·Granted Aug 21, 2001·10 cites·20 claims
- 3744US6117719AOxide spacers as solid sources for gallium dopant introductionADVANCED MICRO DEVICES INC·Filed 1997·Granted Sep 12, 2000·10 cites·23 claims
- 3844US5795627AMethod for annealing damaged semiconductor regions allowing for enhanced oxide growthADVANCED MICRO DEVICES INC·Filed 1997·Granted Aug 18, 1998·10 cites·24 claims
- 3942US6316319B1Method of manufacturing a semiconductor device having shallow junctionsADVANCED MICRO DEVICES INC·Filed 1999·Granted Nov 13, 2001·9 cites·15 claims
- 4039US6245623B1CMOS semiconductor device containing N-channel transistor having shallow LDD junctionsADVANCED MICRO DEVICES INC·Filed 1998·Granted Jun 12, 2001·7 cites·12 claims
- 4138US6642134B2Semiconductor processing employing a semiconductor spacerADVANCED MICRO DEVICES INC·Filed 1999·Granted Nov 4, 2003·5 cites·12 claims
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