Inventor · disambiguated record
Alexander Viktorovich Bolotnikov
Also filed as: BOLOTNIKOV ALEXANDER · BOLOTNIKOV ALEXANDER VIKTOROVICH
47 granted patents·10 pending applications·100 citations·filing 2010–2025
97Inventor score
Files withGEN ELECTRIC45SEMICONDUCTOR COMPONENTS IND LLC9CREE INC1SOLOVIEV STANISLAV IVANOVICH1ZHANG QINGCHUN1
Top patents by PatentIndex Score
57 records- 0198US10937870B2Electric field shielding in silicon carbide metal-oxide-semiconductor (MOS) device cells using body region extensionsGEN ELECTRIC·Filed 2020·Granted Mar 2, 2021·4 cites·20 claims
- 0295US9704949B1Active area designs for charge-balanced diodesGEN ELECTRIC·Filed 2016·Granted Jul 11, 2017·14 cites·21 claims
- 0392US10056457B2Electric field shielding in silicon carbide metal-oxide-semiconductor (MOS) device cells using channel region extensionsGEN ELECTRIC·Filed 2017·Granted Aug 21, 2018·5 cites·19 claims
- 0490US10600871B2Electric field shielding in silicon carbide metal-oxide-semiconductor (MOS) device cells using body region extensionsGEN ELECTRIC·Filed 2017·Granted Mar 24, 2020·4 cites·19 claims
- 0590US10388737B2Electric field shielding in silicon carbide metal-oxide-semiconductor (MOS) devices having an optimization layerGEN ELECTRIC·Filed 2017·Granted Aug 20, 2019·4 cites·18 claims
- 0689US9735237B2Active area designs for silicon carbide super-junction power devicesGEN ELECTRIC·Filed 2015·Granted Aug 15, 2017·7 cites·18 claims
- 0788US10096681B2Electric field shielding in silicon carbide metal-oxide-semiconductor (MOS) device cellsGEN ELECTRIC·Filed 2017·Granted Oct 9, 2018·3 cites·18 claims
- 0887US10243039B2Super-junction semiconductor power devices with fast switching capabilityGEN ELECTRIC·Filed 2016·Granted Mar 26, 2019·5 cites·12 claims
- 0987US9899512B2Silicon carbide device and method of making thereofGEN ELECTRIC·Filed 2016·Granted Feb 20, 2018·7 cites·20 claims
- 1085US9716144B2Semiconductor devices having channel regions with non-uniform edgeGEN ELECTRIC·Filed 2014·Granted Jul 25, 2017·5 cites·15 claims
- 1183US10014388B1Transient voltage suppression devices with symmetric breakdown characteristicsGEN ELECTRIC·Filed 2017·Granted Jul 3, 2018·4 cites·14 claims
- 1283US8637386B2Diffused junction termination structures for silicon carbide devices and methods of fabricating silicon carbide devices incorporating sameZHANG QINGCHUN·Filed 2010·Granted Jan 28, 2014·5 cites·19 claims
- 1382US11056586B2Techniques for fabricating charge balanced (CB) trench-metal-oxide-semiconductor field-effect transistor (MOSFET) devicesGEN ELECTRIC·Filed 2018·Granted Jul 6, 2021·3 cites·21 claims
- 1482US10192958B2Cellular layout for semiconductor devicesGEN ELECTRIC·Filed 2014·Granted Jan 29, 2019·4 cites·17 claims
- 1582US9406762B2Semiconductor device with junction termination extensionGEN ELECTRIC·Filed 2013·Granted Aug 2, 2016·4 cites·12 claims
- 1680US10586846B2System and method for edge termination of super-junction (SJ) devicesGEN ELECTRIC·Filed 2018·Granted Mar 10, 2020·2 cites·13 claims
- 1780US2025374568A1Diodes with schottky contact including localized surface regionsSEMICONDUCTOR COMPONENTS IND LLC·Filed 2025·Application pending·0 cites
- 1879US10566324B2Integrated gate resistors for semiconductor power conversion devicesGEN ELECTRIC·Filed 2017·Granted Feb 18, 2020·3 cites·29 claims
- 1978US11233157B2Systems and methods for unipolar charge balanced semiconductor power devicesGEN ELECTRIC·Filed 2018·Granted Jan 25, 2022·2 cites·22 claims
- 2078US10600649B2Systems and method for charge balanced semiconductor power devices with fast switching capabilityGEN ELECTRIC·Filed 2018·Granted Mar 24, 2020·2 cites·25 claims
- 2178US10002920B1System and method for edge termination of super-junction (SJ) devicesGEN ELECTRIC·Filed 2016·Granted Jun 19, 2018·2 cites·16 claims
- 2278US9570560B2Diffused junction termination structures for silicon carbide devicesCREE INC·Filed 2013·Granted Feb 14, 2017·3 cites·15 claims
- 2376US11764257B2Systems and methods for junction termination of wide band gap super-junction power devicesGEN ELECTRIC·Filed 2022·Granted Sep 19, 2023·0 cites·20 claims
- 2472US9024328B2Metal-oxide-semiconductor (MOS) devices with increased channel periphery and methods of manufactureGEN ELECTRIC·Filed 2013·Granted May 5, 2015·2 cites·17 claims
- 2567US9123798B2Insulating gate field effect transistor device and method for providing the sameGEN ELECTRIC·Filed 2012·Granted Sep 1, 2015·2 cites·23 claims
- 2666US12396187B2Diodes with schottky contact including localized surface regionsSEMICONDUCTOR COMPONENTS IND LLC·Filed 2022·Granted Aug 19, 2025·0 cites·20 claims
- 2765US11271076B2Systems and methods for junction termination in semiconductor devicesGEN ELECTRIC·Filed 2019·Granted Mar 8, 2022·0 cites·20 claims
- 2865US11245003B2Systems and methods for junction termination of wide band gap super-junction power devicesGEN ELECTRIC·Filed 2019·Granted Feb 8, 2022·0 cites·21 claims
- 2964US12191384B2Techniques for fabricating charge balanced (CB) trench-metal-oxide-semiconductor field-effect transistor (MOSFET) devicesGEN ELECTRIC·Filed 2021·Granted Jan 7, 2025·0 cites·20 claims
- 3064US10957759B2Systems and methods for termination in silicon carbide charge balance power devicesGEN ELECTRIC·Filed 2018·Granted Mar 23, 2021·0 cites·16 claims
- 3164US10541338B2Edge termination designs for silicon carbide super-junction power devicesGEN ELECTRIC·Filed 2015·Granted Jan 21, 2020·1 cites·27 claims
- 3264US10199465B2Cellular layout for semiconductor devicesGEN ELECTRIC·Filed 2014·Granted Feb 5, 2019·1 cites·17 claims
- 3363US10103540B2Method and system for transient voltage suppression devices with active controlGEN ELECTRIC·Filed 2014·Granted Oct 16, 2018·1 cites·29 claims
- 3462US2025331257A1Jfet device with improved dynamic characteristicsSEMICONDUCTOR COMPONENTS IND LLC·Filed 2024·Application pending·0 cites
- 3560US9806157B2Structure and method for transient voltage suppression devices with a two-region baseGEN ELECTRIC·Filed 2014·Granted Oct 31, 2017·1 cites·12 claims
- 3660US2025183035A1Methods for manufacturing power semiconductor devices and power semicondudctor structuresSEMICONDUCTOR COMPONENTS IND LLC·Filed 2023·Application pending·0 cites
- 3759US11063115B2Semiconductor device and method of making thereofGEN ELECTRIC·Filed 2019·Granted Jul 13, 2021·0 cites·14 claims
- 3859US2025331255A1Jfet device with improved area utilizationSEMICONDUCTOR COMPONENTS IND LLC·Filed 2024·Application pending·0 cites
- 3957US2025040166A1Planar JFET Device with Reduced Gate ResistanceSEMICONDUCTOR COMPONENTS IND LLC·Filed 2023·Application pending·0 cites
- 4054US2025324769A1Electronic device and a circuit including a power transistorSEMICONDUCTOR COMPONENTS IND LLC·Filed 2024·Application pending·0 cites
- 4152US2023395730A1Diodes including multiple schottky contactsSEMICONDUCTOR COMPONENTS IND LLC·Filed 2022·Application pending·0 cites
- 4250US11031472B2Systems and methods for integrated diode field-effect transistor semiconductor devicesGEN ELECTRIC·Filed 2019·Granted Jun 8, 2021·0 cites·21 claims
- 4349US10608079B2High energy ion implantation for junction isolation in silicon carbide devicesGEN ELECTRIC·Filed 2018·Granted Mar 31, 2020·0 cites·26 claims
- 4449US10541300B2Semiconductor device and method of making thereofGEN ELECTRIC·Filed 2016·Granted Jan 21, 2020·0 cites·28 claims
- 4549US9735263B2Transistor and switching system comprising silicon carbide and oxides of varying thicknesses, and method for providing the sameGEN ELECTRIC·Filed 2013·Granted Aug 15, 2017·0 cites·18 claims
- 4648US2016307997A1Semiconductor device with junction termination extensionGEN ELECTRIC·Filed 2016·Application pending·0 cites
- 4746US10636660B2Super-junction semiconductor device fabricationGEN ELECTRIC·Filed 2018·Granted Apr 28, 2020·0 cites·24 claims
- 4845US10347489B2Semiconductor devices and methods of manufactureGEN ELECTRIC·Filed 2013·Granted Jul 9, 2019·0 cites·20 claims
- 4945US10211304B2Semiconductor device having gate trench in JFET regionGEN ELECTRIC·Filed 2013·Granted Feb 19, 2019·0 cites·18 claims
- 5045US9748341B2Metal-oxide-semiconductor (MOS) devices with increased channel peripheryGEN ELECTRIC·Filed 2013·Granted Aug 29, 2017·0 cites·16 claims
Showing the top 50 of 57 patent records by PatentIndex Score.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →