Inventor · disambiguated record
Steven J. Adler
Also filed as: ADLER STEVEN · ADLER STEVEN J
19 granted patents·2 pending applications·391 citations·filing 1992–2024
94Inventor score
Top patents by PatentIndex Score
21 records- 0196US8563345B2Integration of structurally-stable isolated capacitive micromachined ultrasonic transducer (CMUT) array cells and array elementsADLER STEVEN J·Filed 2012·Granted Oct 22, 2013·72 cites·15 claims
- 0292US5252848ALow on resistance field effect transistorMOTOROLA INC·Filed 1992·Granted Oct 12, 1993·144 cites·13 claims
- 0390US8324006B1Method of forming a capacitive micromachined ultrasonic transducer (CMUT)ADLER STEVEN J·Filed 2009·Granted Dec 4, 2012·62 cites·16 claims
- 0489US8455963B1Low frequency CMUT with vent holesADLER STEVEN·Filed 2011·Granted Jun 4, 2013·12 cites·5 claims
- 0586US5371394ADouble implanted laterally diffused MOS device and method thereofMOTOROLA INC·Filed 1993·Granted Dec 6, 1994·70 cites·11 claims
- 0684US8455289B1Low frequency CMUT with thick oxideADLER STEVEN·Filed 2011·Granted Jun 4, 2013·8 cites·10 claims
- 0775US2024429275A1Deep trench isolation with field oxideTEXAS INSTRUMENTS INC·Filed 2024·Application pending·0 cites
- 0873US7910447B1System and method for providing a self aligned bipolar transistor using a simplified sacrificial nitride emitterNAT SEMICONDUCTOR CORP·Filed 2007·Granted Mar 22, 2011·6 cites·20 claims
- 0972US10741687B2Trench DMOS transistor with reduced gate-to-drain capacitanceNAT SEMICONDUCTOR CORPORATION·Filed 2017·Granted Aug 11, 2020·1 cites·17 claims
- 1069US7642168B1System and method for providing a self aligned bipolar transistor using a sacrificial polysilicon external baseNAT SEMICONDUCTOR CORP·Filed 2007·Granted Jan 5, 2010·4 cites·20 claims
- 1168US7781295B1System and method for providing a single deposition emitter/base in a bipolar junction transistorNAT SEMICONDUCTOR CORP·Filed 2006·Granted Aug 24, 2010·4 cites·20 claims
- 1265US12513974B2Reduced silicon dislocation defects from deep SI trench integrationTEXAS INSTRUMENTS INC·Filed 2022·Granted Dec 30, 2025·0 cites·20 claims
- 1365US12087813B2Deep trench isolation with field oxideTEXAS INSTRUMENTS INC·Filed 2021·Granted Sep 10, 2024·0 cites·20 claims
- 1465US7927958B1System and method for providing a self aligned bipolar transistor using a silicon nitride ringNAT SEMICONDUCTOR CORP·Filed 2007·Granted Apr 19, 2011·3 cites·21 claims
- 1559US9716167B2Trench DMOS transistor with reduced gate-to-drain capacitanceLENG YAOJIAN·Filed 2011·Granted Jul 25, 2017·1 cites·15 claims
- 1654US8803260B2Low frequency CMUT with vent holesTEXAS INSTRUMENTS INC·Filed 2013·Granted Aug 12, 2014·0 cites·19 claims
- 1740US7884023B1System and method for using siliciding PECVD silicon nitride as a dielectric anti-reflective coating and hard maskNAT SEMICONDUCTOR CORP·Filed 2005·Granted Feb 8, 2011·0 cites·20 claims
- 1839US8541853B1High frequency CMUTADLER STEVEN·Filed 2012·Granted Sep 24, 2013·0 cites·18 claims
- 1938US7678657B1System and method for manufacturing an emitter structure in a complementary bipolar CMOS transistor manufacturing processNAT SEMICONDUCTOR CORP·Filed 2006·Granted Mar 16, 2010·0 cites·20 claims
- 2036US2013001647A1Integration of vertical bjt or hbt into soi technologyADLER STEVEN J·Filed 2011·Application pending·0 cites
- 2128US5556793AMethod of making a structure for top surface gettering of metallic impuritiesMOTOROLA INC·Filed 1993·Granted Sep 17, 1996·4 cites·5 claims
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