Inventor · disambiguated record
Won-Chang Jung
Also filed as: JUNG WON-CHANG
15 granted patents·483 citations·filing 2002–2012
92Inventor score
Top patents by PatentIndex Score
15 records- 0195US8644101B2Local sense amplifier circuit and semiconductor memory device including the sameJUN IN-WOO·Filed 2012·Granted Feb 4, 2014·413 cites·16 claims
- 0283US7307910B2Redundancy program circuit and methods thereofSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Dec 11, 2007·10 cites·19 claims
- 0383US7248085B2Internal reset signal generator for use in semiconductor memorySAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jul 24, 2007·7 cites·13 claims
- 0477US7460418B2Semiconductor memory device for stack package and read data skew control method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Dec 2, 2008·10 cites·11 claims
- 0568US7477565B2Redundancy program circuit and methods thereofSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jan 13, 2009·4 cites·5 claims
- 0660US6819623B2Integrated circuit memory devices having efficient column select signal generation during normal and refresh modes of operation and methods of operating sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Nov 16, 2004·11 cites·15 claims
- 0759US7606090B2Redundancy program circuit and methods thereofSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Oct 20, 2009·2 cites·4 claims
- 0859US6826114B2Data path reset circuit using clock enable signal, reset method, and semiconductor memory device including the data path reset circuit and adopting the reset methodSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Nov 30, 2004·10 cites·16 claims
- 0952US7692995B2Redundancy program circuit and methods thereofSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Apr 6, 2010·1 cites·2 claims
- 1050US6982917B2DRAM partial refresh circuits and methodsSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Jan 3, 2006·6 cites·9 claims
- 1147US6992905B2High voltage generator having separate voltage supply circuitSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jan 31, 2006·5 cites·15 claims
- 1244US7609580B2Redundancy program circuit and methods thereofSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Oct 27, 2009·0 cites·12 claims
- 1342US6643201B2Memory device having read charge control, write charge control and floating or precharge circuitsSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Nov 4, 2003·3 cites·5 claims
- 1439US8010765B2Semiconductor memory device and method for controlling clock latency according to reordering of burst dataSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Aug 30, 2011·0 cites·16 claims
- 1537US6775170B2Semiconductor memory device having write column select line or read column select line for shielding signal lineSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Aug 10, 2004·1 cites·9 claims
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