Inventor · disambiguated record
Wai Tung Ng
Also filed as: NG WAI T · NG WAI TUNG
19 granted patents·2 pending applications·534 citations·filing 1991–2021
95Inventor score
Files withLI ZHANMING7TEXAS INSTRUMENTS INC7ASAHI KASEI EMD CORP1ASAHI KASEI MICRODEVICES CORP1KAPIK INC1
Top patents by PatentIndex Score
21 records- 0195US5304827APerformance lateral double-diffused MOS transistorTEXAS INSTRUMENTS INC·Filed 1992·Granted Apr 19, 1994·120 cites·11 claims
- 0291US6034896AMethod of fabricating a fast programmable flash E2 PROM cellUNIV TORONTO·Filed 1996·Granted Mar 7, 2000·168 cites·15 claims
- 0390US5306652ALateral double diffused insulated gate field effect transistor fabrication processTEXAS INSTRUMENTS INC·Filed 1991·Granted Apr 26, 1994·67 cites·27 claims
- 0489US8357986B2High speed orthogonal gate EDMOS device and fabricationASAHI KASEI MICRODEVICES CORP·Filed 2009·Granted Jan 22, 2013·21 cites·7 claims
- 0589US7342528B2Circuit and method for reducing electromagnetic interferenceSEMICONDUCTOR COMPONENTS IND·Filed 2006·Granted Mar 11, 2008·21 cites·17 claims
- 0688US5406110AResurf lateral double diffused insulated gate field effect transistorTEXAS INSTRUMENTS INC·Filed 1994·Granted Apr 11, 1995·58 cites·24 claims
- 0782US8441242B2Digitally controlled integrated DC-DC converter with transient suppressionNG WAI TUNG·Filed 2010·Granted May 14, 2013·11 cites·9 claims
- 0874US10855273B2High-side gate driver for gallium nitride integrated circuitsLI ZHANMING·Filed 2019·Granted Dec 1, 2020·2 cites·8 claims
- 0974US5382535AMethod of fabricating performance lateral double-diffused MOS transistorTEXAS INSTRUMENTS INC·Filed 1994·Granted Jan 17, 1995·31 cites·4 claims
- 1073US10790790B2Amplifiers with delta-sigma modulators using pulse-density modulations and related processesKAPIK INC·Filed 2018·Granted Sep 29, 2020·3 cites·25 claims
- 1157US5578514ALateral double diffused insulated gate field effect transistor and fabrication processTEXAS INSTRUMENTS INC·Filed 1994·Granted Nov 26, 1996·13 cites·11 claims
- 1256US7777562B2Distortion suppression circuit for digital class-D audio amplifierASAHI KASEI EMD CORP·Filed 2008·Granted Aug 17, 2010·4 cites·20 claims
- 1352US10615094B2High power gallium nitride devices and structuresLI ZHANMING·Filed 2017·Granted Apr 7, 2020·0 cites·22 claims
- 1452US10586749B2High power gallium nitride devices and structuresLI ZHANMING·Filed 2018·Granted Mar 10, 2020·0 cites·19 claims
- 1549US5585657AWindowed and segmented linear geometry source cell for power DMOS processesTEXAS INSTRUMENTS INC·Filed 1994·Granted Dec 17, 1996·10 cites·16 claims
- 1649US2022109048A1High Voltage Gallium Nitride Field Effect TransistorLI ZHANMING·Filed 2021·Application pending·0 cites
- 1748US10939553B2Vertical-side solder method and package for power GaN devicesLI ZHANMING·Filed 2019·Granted Mar 2, 2021·0 cites·16 claims
- 1847US10388743B2Power electronic and optoelectronic devices with interdigitated electrodesLI ZHANMING·Filed 2017·Granted Aug 20, 2019·0 cites·24 claims
- 1946US10892254B2Defect-tolerant layout and packaging for GaN power devicesLI ZHANMING·Filed 2019·Granted Jan 12, 2021·0 cites·8 claims
- 2039US5656517AWindowed source and segmented backgate contact linear geometry source cell for power DMOS processesTEXAS INSTRUMENTS INC·Filed 1995·Granted Aug 12, 1997·5 cites·1 claims
- 2133US2006060941A1Polysilicon sidewall spacer lateral bipolar transistor on SOISUN I-SHAN M·Filed 2005·Application pending·0 cites
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