Inventor · disambiguated record
Tong-Jyun Huang
Also filed as: HUANG TONG-JYUN
16 granted patents·4 pending applications·54 citations·filing 2011–2017
90Inventor score
Top patents by PatentIndex Score
20 records- 0194US9552978B1Method of decreasing fin bendingUNITED MICROELECTRONICS CORP·Filed 2016·Granted Jan 24, 2017·11 cites·7 claims
- 0293US9524909B2Fin structure and fin structure cutting processUNITED MICROELECTRONICS CORP·Filed 2015·Granted Dec 20, 2016·9 cites·13 claims
- 0390US8951855B2Manufacturing method for semiconductor device having metal gateLAI CHIEN-MING·Filed 2012·Granted Feb 10, 2015·16 cites·18 claims
- 0484US9384962B2Oxygen treatment of replacement work-function metals in CMOS transistor gatesHWANG GUANG-YAW·Filed 2011·Granted Jul 5, 2016·7 cites·22 claims
- 0583US9754938B1Semiconductor device and method of fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2016·Granted Sep 5, 2017·3 cites·8 claims
- 0680US9653603B1Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2016·Granted May 16, 2017·2 cites·17 claims
- 0779US10643997B2Semiconductor device with metal gatesUNITED MICROELECTRONICS CORP·Filed 2017·Granted May 5, 2020·2 cites·5 claims
- 0877US9196546B2Metal gate transistorUNITED MICROELECTRONICS CORP·Filed 2013·Granted Nov 24, 2015·3 cites·6 claims
- 0967US9842760B1Method for fabricating semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2016·Granted Dec 12, 2017·1 cites·15 claims
- 1058US9825144B2Semiconductor device having metal gate structureUNITED MICROELECTRONICS CORP·Filed 2017·Granted Nov 21, 2017·0 cites·5 claims
- 1156US10121881B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2017·Granted Nov 6, 2018·0 cites·13 claims
- 1254US9859147B2Fin structure cutting processUNITED MICROELECTRONICS CORP·Filed 2016·Granted Jan 2, 2018·0 cites·13 claims
- 1352US10090398B2Manufacturing method of patterned structure of semiconductorUNITED MICROELECTRONICS CORP·Filed 2017·Granted Oct 2, 2018·0 cites·5 claims
- 1451US2016035854A1Method for fabricating semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2015·Application pending·0 cites
- 1550US2014339652A1Semiconductor device with oxygen-containing metal gatesUNITED MICROELECTRONICS CORP·Filed 2014·Application pending·0 cites
- 1649US9466691B2Fin shaped structure and method of forming the sameUNITED MICROELECTRONICS CORP·Filed 2014·Granted Oct 11, 2016·0 cites·10 claims
- 1748US9755048B2Patterned structure of a semiconductor device and a manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2015·Granted Sep 5, 2017·0 cites·10 claims
- 1841US9490342B2Method for fabricating semiconductor deviceLAI CHIEN-MING·Filed 2011·Granted Nov 8, 2016·0 cites·13 claims
- 1938US2018108656A1Asymmetrical fin structure and method of fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2016·Application pending·0 cites
- 2033US2016276429A1Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2015·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →