Inventor · disambiguated record
Shojiro Komatsu
Also filed as: KOMATSU SHOJIRO
5 granted patents·2 pending applications·27 citations·filing 1989–2009
74Inventor score
Top patents by PatentIndex Score
7 records- 0158US2010151193A1Film of SP3-bonded boron nitride having a self-organized surface texture capable of promoting field electron emissionNAT INST FOR MATERIALS SCIENCE·Filed 2009·Application pending·0 cites
- 0255US7419572B2Sp3 bond boron nitride emitting light in ultraviolet region, its producing method, and functional material using sameNAT INST FOR MATERIALS SCIENCE·Filed 2003·Granted Sep 2, 2008·3 cites·5 claims
- 0351US4981671AMethod for preparing diamond or diamond-like carbon by combustion flameNAT INST RES INORGANIC MAT·Filed 1989·Granted Jan 1, 1991·10 cites·4 claims
- 0450US7947243B2Boron nitride thin-film emitter and production method thereof, and electron emitting method using boron nitride thin-film emitterNAT INST FOR MATERIALS SCIENCE·Filed 2005·Granted May 24, 2011·0 cites·12 claims
- 0548US7759662B2Field electron emission element, a method of manufacturing the same and a field electron emission method using such an element as well as an emission/display device employing such a field electron emission element and a method of manufacturing the sameNAT INST FOR MATERIALS SCIENCE·Filed 2005·Granted Jul 20, 2010·0 cites·7 claims
- 0648US2007017700A1Sp3 bonding boron nitride nitride thin film having self-forming surface shape being advantageous in exhibiting property of emitting electric field electrons, method for preparation thereof and use thereofNAT INST FOR MATERIALS SCIENCE·Filed 2004·Application pending·0 cites
- 0744US5286533AMethod of making hard boron nitride by a plasma CVD method employing beam irradiationNAT INST RES INORGANIC MAT·Filed 1993·Granted Feb 15, 1994·14 cites·2 claims
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