Inventor · disambiguated record
Fuminori Mitsuhashi
Also filed as: MITSUHASHI FUMINORI
11 granted patents·3 pending applications·1 citations·filing 2011–2022
78Inventor score
Top patents by PatentIndex Score
14 records- 0167US9806156B2Laminated body and electronic deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2016·Granted Oct 31, 2017·1 cites·5 claims
- 0252US12166112B2Thin film transistor including a stacked multilayer graphene active layerSUMITOMO ELECTRIC INDUSTRIES·Filed 2021·Granted Dec 10, 2024·0 cites·8 claims
- 0352US12002894B2PhotosensorSUMITOMO ELECTRIC INDUSTRIES·Filed 2022·Granted Jun 4, 2024·0 cites·23 claims
- 0452US11881394B2Stack, electronic device, and method for manufacturing stackSUMITOMO ELECTRIC INDUSTRIES·Filed 2020·Granted Jan 23, 2024·0 cites·20 claims
- 0547US10283594B2SiC structure, semiconductor device having SiC structure, and process of forming the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2017·Granted May 7, 2019·0 cites·5 claims
- 0647US2024093379A1Metal machined component, component-mounted module equipped with same, and method for manufacturing sameUNITED PRECISION TECH CO LTD·Filed 2020·Application pending·0 cites
- 0746US10217823B2Semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2017·Granted Feb 26, 2019·0 cites·12 claims
- 0845US11884546B2Multilayer body and electronic deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2019·Granted Jan 30, 2024·0 cites·20 claims
- 0945US10580869B2Stacked body including graphene film and electronic device including graphene filmSUMITOMO ELECTRIC INDUSTRIES·Filed 2017·Granted Mar 3, 2020·0 cites·5 claims
- 1045US9825134B2Layered semiconductor having base layer including GaN substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2015·Granted Nov 21, 2017·0 cites·3 claims
- 1144US10083831B2Substrate and electronic deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2017·Granted Sep 25, 2018·0 cites·7 claims
- 1243US10529807B2Stacked body and electronic deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2017·Granted Jan 7, 2020·0 cites·5 claims
- 1337US2018130912A1Field effect transistor including graphene layerSUMITOMO ELECTRIC INDUSTRIES·Filed 2017·Application pending·0 cites
- 1432US2013207076A1Method for fabricating group iii nitride semiconductor light emitting device, and group iii nitride semiconductor light emitting deviceYOSHIMOTO SUSUMU·Filed 2011·Application pending·0 cites
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