Inventor · disambiguated record
Toshimitsu Kariya
Also filed as: KARIYA TOSHIMITSU
37 granted patents·1 pending application·1,678 citations·filing 1988–2006
98Inventor score
Files withCANON KK38
Top patents by PatentIndex Score
38 records- 0197US6123824AProcess for producing photo-electricity generating deviceCANON KK·Filed 1997·Granted Sep 26, 2000·197 cites·49 claims
- 0296US7301215B2Photovoltaic deviceCANON KK·Filed 2006·Granted Nov 27, 2007·36 cites·5 claims
- 0391US6140570APhotovoltaic element having a back side transparent and electrically conductive layer with a light incident side surface region having a specific cross section and a module comprising said photovolatic elementCANON KK·Filed 1998·Granted Oct 31, 2000·112 cites·21 claims
- 0491US5421909APhotovoltaic conversion deviceCANON KK·Filed 1993·Granted Jun 6, 1995·115 cites·36 claims
- 0590US6472248B2Microcrystalline series photovoltaic element and process for fabrication of sameCANON KK·Filed 2001·Granted Oct 29, 2002·49 cites·31 claims
- 0689US5520740AProcess for continuously forming a large area functional deposited film by microwave PCVD method and apparatus suitable for practicing the sameCANON KK·Filed 1995·Granted May 28, 1996·89 cites·12 claims
- 0788US5656098APhotovoltaic conversion device and method for producing sameCANON KK·Filed 1995·Granted Aug 12, 1997·93 cites·20 claims
- 0887US5714010AProcess for continuously forming a large area functional deposited film by a microwave PCVD method and an apparatus suitable for practicing the sameCANON KK·Filed 1995·Granted Feb 3, 1998·80 cites·3 claims
- 0987US5456762APhotoelectric conversion elementsCANON KK·Filed 1993·Granted Oct 10, 1995·65 cites·19 claims
- 1087US5401330APhotovoltaic elementCANON KK·Filed 1994·Granted Mar 28, 1995·78 cites·48 claims
- 1186US5599403ASemiconductor device containing microcrystalline germanium & method for producing the sameCANON KK·Filed 1995·Granted Feb 4, 1997·66 cites·10 claims
- 1286US5527391AMethod and apparatus for continuously forming functional deposited films with a large area by a microwave plasma CVD methodCANON KK·Filed 1995·Granted Jun 18, 1996·72 cites·22 claims
- 1386US5417770APhotovoltaic device and a forming method thereofCANON KK·Filed 1993·Granted May 23, 1995·61 cites·28 claims
- 1485US5114770AMethod for continuously forming functional deposited films with a large area by a microwave plasma cvd methodCANON KK·Filed 1990·Granted May 19, 1992·61 cites·25 claims
- 1583US7189917B2Stacked photovoltaic deviceCANON KK·Filed 2004·Granted Mar 13, 2007·24 cites·8 claims
- 1681US5527396ADeposited film forming apparatusCANON KK·Filed 1995·Granted Jun 18, 1996·46 cites·4 claims
- 1779US4981766ALight receiving member having a multilayered light receiving layer composed of a lower layer made of aluminum-containing inorganic material and an upper layer made of a non-single-crystal silicon materialCANON KK·Filed 1989·Granted Jan 1, 1991·19 cites·26 claims
- 1878US6344608B2Photovoltaic elementCANON KK·Filed 1999·Granted Feb 5, 2002·52 cites·13 claims
- 1977US5130170AMicrowave pcvd method for continuously forming a large area functional deposited film using a curved moving substrate web with microwave energy with a directivity in one direction perpendicular to the direction of microwave propagationCANON KK·Filed 1990·Granted Jul 14, 1992·41 cites·22 claims
- 2073US6107116AMethod for producing a photovoltaic element with zno layer having increasing fluorine content in layer thickness directionCANON KK·Filed 1998·Granted Aug 22, 2000·34 cites·11 claims
- 2171US5510151AContinuous film-forming process using microwave energy in a moving substrate web functioning as a substrate and plasma generating spaceCANON KK·Filed 1992·Granted Apr 23, 1996·42 cites·21 claims
- 2269US5358811AElectrophotographic method using an amorphous silicon light receiving member with a latent image support layer and a developed image support layer and insulating toner having a volume average particle size of 4.5 to 9.0 micronCANON KK·Filed 1993·Granted Oct 25, 1994·17 cites·12 claims
- 2367US5281541AMethod for repairing an electrically short-circuited semiconductor device, and process for producing a semiconductor device utilizing said methodCANON KK·Filed 1991·Granted Jan 25, 1994·23 cites·12 claims
- 2465US5849108APhotovoltaic element with zno layer having increasing fluorine content in layer thickness directionCANON KK·Filed 1996·Granted Dec 15, 1998·24 cites·16 claims
- 2564US5087542AElectrophotographic image-forming method wherein an amorphous silicon light receiving member with a latent image support layer and a developed image support layer and fine particle insulating toner are usedCANON KK·Filed 1989·Granted Feb 11, 1992·13 cites·13 claims
- 2661US6177711B1Photoelectric conversion elementCANON KK·Filed 1997·Granted Jan 23, 2001·25 cites·12 claims
- 2761US5439533APhotovoltaic device, method of producing the same and generating system using the sameCANON KK·Filed 1994·Granted Aug 8, 1995·22 cites·44 claims
- 2859US5284525ASolar cellCANON KK·Filed 1991·Granted Feb 8, 1994·21 cites·6 claims
- 2958US6215061B1Photoconductive thin film, and photovoltaic device making use of the sameCANON KK·Filed 1999·Granted Apr 10, 2001·20 cites·114 claims
- 3058US5418680AApparatus for repairing an electrically short-circuited semiconductor deviceCANON KK·Filed 1993·Granted May 23, 1995·16 cites·3 claims
- 3155US5371380ASi- and/or Ge-containing non-single crystalline semiconductor film with an average radius of 3.5 A or less as for microvoids contained therein and a microvoid density 1×10.sup.(19) (cm-3) or lessCANON KK·Filed 1994·Granted Dec 6, 1994·23 cites·61 claims
- 3253US5362684ANon-monocrystalline silicon carbide semiconductor, process of production thereof, and semiconductor device employing the sameCANON KK·Filed 1992·Granted Nov 8, 1994·13 cites·6 claims
- 3348US5510631ANon-monocrystalline silicon carbide semiconductor and semiconductor device employing the sameCANON KK·Filed 1994·Granted Apr 23, 1996·10 cites·14 claims
- 3448US4886723ALight receiving member having a multilayered light receiving layer composed of a lower layer made of aluminum-containing inorganic material and an upper layer made of non-single-crystal silicon materialCANON KK·Filed 1988·Granted Dec 12, 1989·7 cites·26 claims
- 3546US2004187915A1Stacked photovoltaic element and current balance adjustment methodCANON KK·Filed 2004·Application pending·0 cites
- 3642US4882251ALight receiving member having a multilayered light receiving layer composed of a lower layer made of aluminum-containing inorganic material and an upper layer made of non-single-crystal silicon materialCANON KK·Filed 1988·Granted Nov 21, 1989·5 cites·30 claims
- 3741US4906542ALight receiving member having a multilayered light receiving layer composed of a lower layer made of aluminum-containing inorganic material and an upper layer made of non-single-crystal silicon materialCANON KK·Filed 1988·Granted Mar 6, 1990·4 cites·26 claims
- 3835US4906543ALight receiving member having a multilayered light receiving layer composed of a lower layer made of aluminum-containing inorganic material and an upper layer made of non-single-crystal silicon materialCANON KK·Filed 1988·Granted Mar 6, 1990·3 cites·27 claims
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