Inventor · disambiguated record
Tatsuyuki Aoike
Also filed as: AOIKE TATSUYUKI
42 granted patents·1 pending application·746 citations·filing 1987–2008
98Inventor score
Files withCANON KK43
Top patents by PatentIndex Score
43 records- 0186US6250251B1Vacuum processing apparatus and vacuum processing methodCANON KK·Filed 1999·Granted Jun 26, 2001·49 cites·27 claims
- 0286US5417770APhotovoltaic device and a forming method thereofCANON KK·Filed 1993·Granted May 23, 1995·61 cites·28 claims
- 0381US5527396ADeposited film forming apparatusCANON KK·Filed 1995·Granted Jun 18, 1996·46 cites·4 claims
- 0479US4981766ALight receiving member having a multilayered light receiving layer composed of a lower layer made of aluminum-containing inorganic material and an upper layer made of a non-single-crystal silicon materialCANON KK·Filed 1989·Granted Jan 1, 1991·19 cites·26 claims
- 0578US4954397ALight receiving member having a divided-functionally structured light receiving layer having CGL and CTL for use in electrophotographyCANON KK·Filed 1989·Granted Sep 4, 1990·21 cites·44 claims
- 0674US4795691ALayered amorphous silicon photoconductor with surface layer having specific refractive index propertiesCANON KK·Filed 1987·Granted Jan 3, 1989·19 cites·31 claims
- 0773US5429685APhotoelectric conversion element and power generation system using the sameCANON KK·Filed 1993·Granted Jul 4, 1995·34 cites·35 claims
- 0869US5358811AElectrophotographic method using an amorphous silicon light receiving member with a latent image support layer and a developed image support layer and insulating toner having a volume average particle size of 4.5 to 9.0 micronCANON KK·Filed 1993·Granted Oct 25, 1994·17 cites·12 claims
- 0967US5281541AMethod for repairing an electrically short-circuited semiconductor device, and process for producing a semiconductor device utilizing said methodCANON KK·Filed 1991·Granted Jan 25, 1994·23 cites·12 claims
- 1067US5007971APin heterojunction photovoltaic elements with polycrystal BP(H,F) semiconductor filmCANON KK·Filed 1990·Granted Apr 16, 1991·40 cites·4 claims
- 1165US5024706APin heterojunction photovoltaic elements with polycrystal AlP(H,F) semiconductor filmCANON KK·Filed 1990·Granted Jun 18, 1991·37 cites·4 claims
- 1264US5087542AElectrophotographic image-forming method wherein an amorphous silicon light receiving member with a latent image support layer and a developed image support layer and fine particle insulating toner are usedCANON KK·Filed 1989·Granted Feb 11, 1992·13 cites·13 claims
- 1363US6443191B1Vacuum processing methodsCANON KK·Filed 2001·Granted Sep 3, 2002·9 cites·20 claims
- 1463US5006180APin heterojunction photovoltaic elements with polycrystal GaP (H,F) semiconductor filmCANON KK·Filed 1990·Granted Apr 9, 1991·35 cites·4 claims
- 1562US6165274APlasma processing apparatus and methodCANON KK·Filed 1998·Granted Dec 26, 2000·15 cites·21 claims
- 1662US5002617APin heterojunction photovoltaic elements with polycrystal AlAs(H,F) semiconductor filmCANON KK·Filed 1990·Granted Mar 26, 1991·24 cites·4 claims
- 1761US7550180B2Plasma treatment methodCANON KK·Filed 2008·Granted Jun 23, 2009·0 cites·6 claims
- 1861US5342452APhotovoltaic deviceCANON KK·Filed 1992·Granted Aug 30, 1994·20 cites·25 claims
- 1960US5002618APin heterojunction photovoltaic elements with polycrystal BAs(H,F) semiconductor filmCANON KK·Filed 1990·Granted Mar 26, 1991·31 cites·4 claims
- 2059US6670089B2Electrophotographic image forming method and apparatusCANON KK·Filed 2002·Granted Dec 30, 2003·7 cites·30 claims
- 2159US5284525ASolar cellCANON KK·Filed 1991·Granted Feb 8, 1994·21 cites·6 claims
- 2258US5418680AApparatus for repairing an electrically short-circuited semiconductor deviceCANON KK·Filed 1993·Granted May 23, 1995·16 cites·3 claims
- 2358US4845001ALight receiving member for use in electrophotography with a surface layer comprising non-single-crystal material containing tetrahedrally bonded boron nitrideCANON KK·Filed 1987·Granted Jul 4, 1989·10 cites·27 claims
- 2455US5573601APin amorphous silicon photovoltaic element with counter-doped intermediate layerCANON KK·Filed 1994·Granted Nov 12, 1996·17 cites·17 claims
- 2555US5371380ASi- and/or Ge-containing non-single crystalline semiconductor film with an average radius of 3.5 A or less as for microvoids contained therein and a microvoid density 1×10.sup.(19) (cm-3) or lessCANON KK·Filed 1994·Granted Dec 6, 1994·23 cites·61 claims
- 2653US5604133AMethod of making photovoltaic deviceCANON KK·Filed 1996·Granted Feb 18, 1997·15 cites·42 claims
- 2753US5563075AForming a non-monocrystalline silicone semiconductor having pin junction including laminated intrinsic layersCANON KK·Filed 1995·Granted Oct 8, 1996·15 cites·19 claims
- 2853US5362684ANon-monocrystalline silicon carbide semiconductor, process of production thereof, and semiconductor device employing the sameCANON KK·Filed 1992·Granted Nov 8, 1994·13 cites·6 claims
- 2952US6649020B1Plasma processing apparatusCANON KK·Filed 2001·Granted Nov 18, 2003·3 cites·7 claims
- 3051US5961726ADeposited film forming apparatus and electrode for use in itCANON KK·Filed 1995·Granted Oct 5, 1999·9 cites·47 claims
- 3151US5741615ALight receiving member with non-single-crystal silicon layer containing Cr, Fe, Na, Ni and MgCANON KK·Filed 1993·Granted Apr 21, 1998·14 cites·22 claims
- 3251US5338370APhotovoltaic deviceCANON KK·Filed 1992·Granted Aug 16, 1994·12 cites·12 claims
- 3349US6486045B2Apparatus and method for forming deposited filmCANON KK·Filed 2001·Granted Nov 26, 2002·1 cites·8 claims
- 3448US6300225B1Plasma processing methodCANON KK·Filed 1999·Granted Oct 9, 2001·11 cites·20 claims
- 3548US5510631ANon-monocrystalline silicon carbide semiconductor and semiconductor device employing the sameCANON KK·Filed 1994·Granted Apr 23, 1996·10 cites·14 claims
- 3648US4886723ALight receiving member having a multilayered light receiving layer composed of a lower layer made of aluminum-containing inorganic material and an upper layer made of non-single-crystal silicon materialCANON KK·Filed 1988·Granted Dec 12, 1989·7 cites·26 claims
- 3746US5563425APhotoelectrical conversion device and generating system using the sameCANON KK·Filed 1993·Granted Oct 8, 1996·12 cites·87 claims
- 3845US2004112864A1Plasma treatment method and plasma treatment apparatusCANON KK·Filed 2003·Application pending·0 cites
- 3942US5236798AElectrophotographic light receiving member having a photoconductive layer formed of non-single crystal silicon material and a surface layer containing polysilane compoundCANON KK·Filed 1990·Granted Aug 17, 1993·5 cites·3 claims
- 4042US4882251ALight receiving member having a multilayered light receiving layer composed of a lower layer made of aluminum-containing inorganic material and an upper layer made of non-single-crystal silicon materialCANON KK·Filed 1988·Granted Nov 21, 1989·5 cites·30 claims
- 4141US4906542ALight receiving member having a multilayered light receiving layer composed of a lower layer made of aluminum-containing inorganic material and an upper layer made of non-single-crystal silicon materialCANON KK·Filed 1988·Granted Mar 6, 1990·4 cites·26 claims
- 4238US6761128B2Plasma treatment apparatusCANON KK·Filed 2001·Granted Jul 13, 2004·0 cites·3 claims
- 4335US4906543ALight receiving member having a multilayered light receiving layer composed of a lower layer made of aluminum-containing inorganic material and an upper layer made of non-single-crystal silicon materialCANON KK·Filed 1988·Granted Mar 6, 1990·3 cites·27 claims
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