Inventor · disambiguated record
Hongbae Park
Also filed as: PARK HONGBAE
8 granted patents·3 pending applications·10 citations·filing 2009–2022
79Inventor score
Top patents by PatentIndex Score
11 records- 0181US8309411B2Semiconductor device and method of fabricating the sameNA HOONJOO·Filed 2011·Granted Nov 13, 2012·7 cites·16 claims
- 0267USRE49538ESemiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted May 30, 2023·0 cites·25 claims
- 0364US8044469B2Semiconductor device and associated methodsSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Oct 25, 2011·2 cites·9 claims
- 0463US12453172B2Semiconductor device including fin field effect transistor with separation layerSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Oct 21, 2025·0 cites·12 claims
- 0557US8633546B2Semiconductor devicePARK HONGBAE·Filed 2012·Granted Jan 21, 2014·1 cites·20 claims
- 0653US11289478B2Semiconductor device including fin field effect transistorSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Mar 29, 2022·0 cites·18 claims
- 0751US8766366B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2012·Granted Jul 1, 2014·0 cites·5 claims
- 0845US8278168B2Methods of forming a semiconductor devicePARK HONGBAE·Filed 2011·Granted Oct 2, 2012·0 cites·9 claims
- 0943US2015035077A1Mos transistors including a recessed metal pattern in a trenchLEE HYE-LAN·Filed 2014·Application pending·0 cites
- 1038US2012052641A1Methods of Manufacturing MOS TransistorsLEE HYE-LAN·Filed 2011·Application pending·0 cites
- 1137US2010102399A1Methods of Forming Field Effect Transistors and Devices Formed TherebyHYUN SANGJIN·Filed 2009·Application pending·0 cites
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