Inventor · disambiguated record
Hidefumi Hiura
Also filed as: HIURA HIDEFUMI
15 granted patents·5 pending applications·875 citations·filing 1994–2020
94Inventor score
Files withNEC CORP10HIURA HIDEFUMI7AGENCY IND SCIENCE TECHN1NAT INST OF ADVANCED IND SCIEN1NIPPON ELECTRIC CO1
Top patents by PatentIndex Score
20 records- 0198US5698175AProcess for purifying, uncapping and chemically modifying carbon nanotubesNEC CORP·Filed 1995·Granted Dec 16, 1997·322 cites·6 claims
- 0298US5641466AMethod of purifying carbon nanotubesNEC CORP·Filed 1994·Granted Jun 24, 1997·253 cites·7 claims
- 0395US6083624ACarbon material and method of preparing the sameNEC CORP·Filed 1997·Granted Jul 4, 2000·103 cites·17 claims
- 0493US8168964B2Semiconductor device using graphene and method of manufacturing the sameHIURA HIDEFUMI·Filed 2008·Granted May 1, 2012·50 cites·8 claims
- 0584US8980217B2Method of manufacturing graphene substrate, and graphene substrateHIURA HIDEFUMI·Filed 2011·Granted Mar 17, 2015·7 cites·18 claims
- 0681US8698077B2Method for determining number of layers of two-dimensional thin film atomic structure and device for determining number of layers of two-dimensional thin film atomic structureHIURA HIDEFUMI·Filed 2011·Granted Apr 15, 2014·4 cites·14 claims
- 0777US7687801B2Dopant material, dopant material manufacturing method, and semiconductor device using the sameNAT INST OF ADVANCED IND SCIEN·Filed 2006·Granted Mar 30, 2010·3 cites·18 claims
- 0877US6540972B1Carbon material and method of preparing the sameNEC CORP·Filed 1999·Granted Apr 1, 2003·31 cites·10 claims
- 0977US5925465ACarbon material originating from graphite and method of producing sameNEC CORP·Filed 1997·Granted Jul 20, 1999·48 cites·7 claims
- 1075US5626812AMethod of producing carbon material by bending at least one carbon atom layer of graphiteNEC CORP·Filed 1995·Granted May 6, 1997·46 cites·6 claims
- 1163US8835286B2Manufacturing method of graphene substrate and graphene substrateHIURA HIDEFUMI·Filed 2011·Granted Sep 16, 2014·1 cites·16 claims
- 1255US7247548B2Doping method and semiconductor device using the sameNIPPON ELECTRIC CO·Filed 2004·Granted Jul 24, 2007·6 cites·18 claims
- 1350US2022176329A1Dispersion system, treatment method and chemical reaction apparatusNEC CORP·Filed 2020·Application pending·0 cites
- 1448US8093580B2Semiconductor device and method of manufacturing the sameHIURA HIDEFUMI·Filed 2007·Granted Jan 10, 2012·0 cites·10 claims
- 1547US6680411B2Carborane supercluster and method of producing sameAGENCY IND SCIENCE TECHN·Filed 2002·Granted Jan 20, 2004·1 cites·18 claims
- 1647US2012161098A1Substrate, manufacturing method of substrate, semiconductor element, and manufacturing method of semiconductor elementHIURA HIDEFUMI·Filed 2009·Application pending·0 cites
- 1745US2007161213A1Semiconductor device and method of manufacturing the sameHIURA HIDEFUMI·Filed 2006·Application pending·0 cites
- 1843US2019217268A1Chemical reaction device, and method for producing sameNEC CORP·Filed 2017·Application pending·0 cites
- 1941US2020206713A1Object, device, and processing methodNEC CORP·Filed 2018·Application pending·0 cites
- 2038US7138688B2Doping method and semiconductor device fabricated using the methodNEC CORP·Filed 2003·Granted Nov 21, 2006·0 cites·6 claims
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