Inventor · disambiguated record
David C. Ahlgren
Also filed as: AHLGREN DAVID · AHLGREN DAVID C
16 granted patents·398 citations·filing 1985–2007
94Inventor score
Files withIBM16
Top patents by PatentIndex Score
16 records- 0190US5656514AMethod for making heterojunction bipolar transistor with self-aligned retrograde emitter profileIBM·Filed 1994·Granted Aug 12, 1997·96 cites·8 claims
- 0289US6858532B2Low defect pre-emitter and pre-base oxide etch for bipolar transistors and related toolingIBM·Filed 2002·Granted Feb 22, 2005·44 cites·19 claims
- 0389US6492238B1Bipolar transistor with raised extrinsic base fabricated in an integrated BiCMOS circuitIBM·Filed 2001·Granted Dec 10, 2002·45 cites·17 claims
- 0483US6979884B2Bipolar transistor having self-aligned silicide and a self-aligned emitter contact borderIBM·Filed 2003·Granted Dec 27, 2005·27 cites·10 claims
- 0582US5766971AOxide strip that improves planarityIBM·Filed 1996·Granted Jun 16, 1998·67 cites·26 claims
- 0678US6780695B1BiCMOS integration scheme with raised extrinsic baseIBM·Filed 2003·Granted Aug 24, 2004·24 cites·17 claims
- 0775US7611953B2Bipolar transistor with isolation and direct contactsIBM·Filed 2007·Granted Nov 3, 2009·5 cites·8 claims
- 0874US6667521B2Bipolar transistor with raised extrinsic base fabricated in an integrated BiCMOS circuitIBM·Filed 2002·Granted Dec 23, 2003·15 cites·8 claims
- 0972US7466010B2Bipolar transistor having self-aligned silicide and a self-aligned emitter contact borderIBM·Filed 2005·Granted Dec 16, 2008·4 cites·12 claims
- 1066US7217988B2Bipolar transistor with isolation and direct contactsIBM·Filed 2004·Granted May 15, 2007·10 cites·13 claims
- 1165US4667395AMethod for passivating an undercut in semiconductor device preparationIBM·Filed 1985·Granted May 26, 1987·31 cites·14 claims
- 1261US7129129B2Vertical device with optimal trench shapeIBM·Filed 2004·Granted Oct 31, 2006·9 cites·11 claims
- 1352US5266505AImage reversal process for self-aligned implants in planar epitaxial-base bipolar transistorsIBM·Filed 1992·Granted Nov 30, 1993·15 cites·2 claims
- 1451US6881259B1In-situ monitoring and control of germanium profile in silicon-germanium alloy films and temperature monitoring during deposition of silicon filmsIBM·Filed 2000·Granted Apr 19, 2005·1 cites·18 claims
- 1543US7585740B2Fully silicided extrinsic base transistorIBM·Filed 2006·Granted Sep 8, 2009·0 cites·18 claims
- 1632US4701998AMethod for fabricating a bipolar transistorIBM·Filed 1985·Granted Oct 27, 1987·5 cites·6 claims
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