Inventor · disambiguated record
Franco Bertotti
Also filed as: BERTOTTI FRANCO
21 granted patents·343 citations·filing 1979–1998
96Inventor score
Files withSGS MICROELETTRONICA SPA10ATES COMPONENTI ELETTRON5SGS THOMSON MICROELECTRONICS5ST MICROELECTRONICS SRL1
Top patents by PatentIndex Score
21 records- 0196US4887142AMonolithically integrated semiconductor device containing bipolar junction transistors, CMOS and DMOS transistors and low leakage diodes and a method for its fabricationSGS MICROELETTRONICA SPA·Filed 1988·Granted Dec 12, 1989·118 cites·1 claims
- 0280US5021860AIntegrated device for shielding the injection of charges into the substrateSGS THOMSON MICROELECTRONICS·Filed 1988·Granted Jun 4, 1991·41 cites·5 claims
- 0369US4266233AI-C Wafer incorporating junction-type field-effect transistorATES COMPONENTI ELETTRON·Filed 1979·Granted May 5, 1981·16 cites·5 claims
- 0461US4739378AProtection of integrated circuits from electric dischargeSGS MICROELETTRONICA SPA·Filed 1987·Granted Apr 19, 1988·19 cites·3 claims
- 0559US4631561ASemiconductor overvoltage suppressor with accurately determined striking potentialATES COMPONENTI ELETTRON·Filed 1984·Granted Dec 23, 1986·15 cites·1 claims
- 0655US4829344AElectronic semiconductor device for protecting integrated circuits against electrostatic dischargesSGS MICROELETTRONICA SPA·Filed 1986·Granted May 9, 1989·15 cites·3 claims
- 0753US4890149AIntegrated device for shielding charge injection into the substrate, in particular in driving circuits for inductive and capacitive loadsSGS MICROELETTRONICA SPA·Filed 1987·Granted Dec 26, 1989·20 cites·10 claims
- 0851US4682197APower transistor with spaced subtransistors having individual collectorsSGS MICROELETTRONICA SPA·Filed 1985·Granted Jul 21, 1987·13 cites·8 claims
- 0950US5185649ACircuital arrangement for preventing latchup in transistors with insulated collectorsSGS THOMSON MICROELECTRONICS·Filed 1991·Granted Feb 9, 1993·11 cites·20 claims
- 1046US4672235ABipolar power transistorSGS MICROELETTRONICA SPA·Filed 1985·Granted Jun 9, 1987·7 cites·1 claims
- 1146US4245209AVoltage divider including a tapped resistor diffused in semiconductor substrateATES COMPONENTI ELETTRON·Filed 1979·Granted Jan 13, 1981·9 cites·6 claims
- 1242US4740821ANPN equivalent structure with breakdown voltage greater than the intrinsic breakdown voltage of NPN transistorsSGS MICROELETTRONICA SPA·Filed 1987·Granted Apr 26, 1988·8 cites·3 claims
- 1340US4887141ASaturation limiting system for a vertical, isolated collector PNP transistor and monolithically integrated structure thereofSGS THOMSON MICROELECTRONICS·Filed 1988·Granted Dec 12, 1989·8 cites·4 claims
- 1439US4725810AMethod of making an implanted resistor, and resistor obtained therebySGS MICROELETTRONICA SPA·Filed 1986·Granted Feb 16, 1988·9 cites·7 claims
- 1538US4641171AMonolithically integrated semiconductor power deviceSGS MICROELETTRONICA SPA·Filed 1985·Granted Feb 3, 1987·9 cites·20 claims
- 1637USRE35486ECircuital arrangement for preventing latchup in transistors with insulated collectorsSGS THOMSON MICROELECTRONICS·Filed 1995·Granted Apr 1, 1997·4 cites·21 claims
- 1736US4614962AControlled electronic switching device for the suppression of transientsATES COMPONENTI ELETTRON·Filed 1984·Granted Sep 30, 1986·6 cites·2 claims
- 1831US6236225B1Method of testing the gate oxide in integrated DMOS power transistors and integrated device comprising a DMOS power transistorST MICROELECTRONICS SRL·Filed 1998·Granted May 22, 2001·4 cites·22 claims
- 1930US4663647ABuried-resistance semiconductor device and fabrication processSGS MICROELETTRONICA SPA·Filed 1985·Granted May 5, 1987·3 cites·1 claims
- 2030US4319262AIntegrated-circuit structure including lateral PNP transistor with polysilicon layer bridging gap in collector field relief electrodeATES COMPONENTI ELETTRON·Filed 1980·Granted Mar 9, 1982·6 cites·6 claims
- 2129US4910159AMethod for incrementally increasing the collector area of a lateral PNP transistor during electrical testing of an integrated device on waferSGS THOMSON MICROELECTRONICS·Filed 1988·Granted Mar 20, 1990·2 cites·2 claims
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