Inventor · disambiguated record
David B. Fraser
Also filed as: FRASER DAVID · FRASER DAVID B · FRASER DAVID BRUCE
47 granted patents·1 pending application·3,589 citations·filing 1974–2005
99Inventor score
Top patents by PatentIndex Score
48 records- 0199US5739579AMethod for forming interconnections for semiconductor fabrication and semiconductor device having such interconnectionsINTEL CORP·Filed 1996·Granted Apr 14, 1998·427 cites·14 claims
- 0298US6790704B2Method for capacitively coupling electronic devicesINTEL CORP·Filed 2001·Granted Sep 14, 2004·188 cites·11 claims
- 0397US5817572AMethod for forming multileves interconnections for semiconductor fabricationINTEL CORP·Filed 1996·Granted Oct 6, 1998·242 cites·37 claims
- 0497US5612254AMethods of forming an interconnect on a semiconductor substrateINTEL CORP·Filed 1992·Granted Mar 18, 1997·478 cites·22 claims
- 0596US5783478AMethod of frabricating a MOS transistor having a composite gate electrodeINTEL CORP·Filed 1996·Granted Jul 21, 1998·157 cites·10 claims
- 0696US5625217AMOS transistor having a composite gate electrode and method of fabricationINTEL CORP·Filed 1995·Granted Apr 29, 1997·162 cites·4 claims
- 0796US5350484AMethod for the anisotropic etching of metal films in the fabrication of interconnectsINTEL CORP·Filed 1992·Granted Sep 27, 1994·275 cites·52 claims
- 0894US5858843ALow temperature method of forming gate electrode and gate dielectricINTEL CORP·Filed 1996·Granted Jan 12, 1999·120 cites·22 claims
- 0991US5818092APolycide filmINTEL CORP·Filed 1997·Granted Oct 6, 1998·77 cites·14 claims
- 1091US4244799AFabrication of integrated circuits utilizing thick high-resolution patternsBELL TELEPHONE LABOR INC·Filed 1978·Granted Jan 13, 1981·63 cites·14 claims
- 1190US6309956B1Fabricating low K dielectric interconnect systems by using dummy structures to enhance processINTEL CORP·Filed 1999·Granted Oct 30, 2001·138 cites·6 claims
- 1290US5886410AInterconnect structure with hard mask and low dielectric constant materialsINTEL CORP·Filed 1996·Granted Mar 23, 1999·110 cites·14 claims
- 1389US4337476ASilicon rich refractory silicides as gate metalBELL TELEPHONE LABOR INC·Filed 1980·Granted Jun 29, 1982·48 cites·7 claims
- 1488US7759774B2Shielded structures to protect semiconductor devicesINTEL CORP·Filed 2005·Granted Jul 20, 2010·15 cites·20 claims
- 1588US5861340AMethod of forming a polycide filmINTEL CORP·Filed 1996·Granted Jan 19, 1999·61 cites·24 claims
- 1688US5714418ADiffusion barrier for electrical interconnects in an integrated circuitINTEL CORP·Filed 1995·Granted Feb 3, 1998·84 cites·20 claims
- 1788US5047367AProcess for formation of a self aligned titanium nitride/cobalt silicide bilayerINTEL CORP·Filed 1990·Granted Sep 10, 1991·138 cites·37 claims
- 1885US6303464B1Method and structure for reducing interconnect system capacitance through enclosed voids in a dielectric layerINTEL CORP·Filed 1996·Granted Oct 16, 2001·87 cites·8 claims
- 1984US4966868AProcess for selective contact hole filling including a silicide plugINTEL CORP·Filed 1989·Granted Oct 30, 1990·49 cites·6 claims
- 2084US4046660ASputter coating with charged particle flux controlBELL TELEPHONE LABOR INC·Filed 1975·Granted Sep 6, 1977·30 cites·6 claims
- 2182US6696369B2Method of creating shielded structures to protect semiconductor devicesINTEL CORP·Filed 2001·Granted Feb 24, 2004·27 cites·27 claims
- 2281US6027995AMethod for fabricating an interconnect structure with hard mask and low dielectric constant materialsINTEL CORP·Filed 1998·Granted Feb 22, 2000·59 cites·8 claims
- 2379US3975252AHigh-resolution sputter etchingBELL TELEPHONE LABOR INC·Filed 1975·Granted Aug 17, 1976·37 cites·20 claims
- 2476US4362597AMethod of fabricating high-conductivity silicide-on-polysilicon structures for MOS devicesBELL TELEPHONE LABOR INC·Filed 1981·Granted Dec 7, 1982·43 cites·7 claims
- 2576US4072768AMethod for making patterned gold metallizationBELL TELEPHONE LABOR INC·Filed 1976·Granted Feb 7, 1978·30 cites·12 claims
- 2674US6037249AMethod for forming air gaps for advanced interconnect systemsINTEL CORP·Filed 1997·Granted Mar 14, 2000·48 cites·20 claims
- 2774US5536684AProcess for formation of epitaxial cobalt silicide and shallow junction of siliconINTEL CORP·Filed 1994·Granted Jul 16, 1996·56 cites·36 claims
- 2873US6998357B2High dielectric constant metal oxide gate dielectricsINTEL CORP·Filed 2003·Granted Feb 14, 2006·13 cites·16 claims
- 2973US6501065B1Image sensor using a thin film photodiode above active CMOS circuitryINTEL CORP·Filed 1999·Granted Dec 31, 2002·39 cites·16 claims
- 3072US6040628AInterconnect structure using a combination of hard dielectric and polymer as interlayer dielectricsINTEL CORP·Filed 1996·Granted Mar 21, 2000·36 cites·20 claims
- 3172US3949131APhotomasks with antistatic controlBELL TELEPHONE LABOR INC·Filed 1974·Granted Apr 6, 1976·16 cites·6 claims
- 3271US6528856B1High dielectric constant metal oxide gate dielectricsINTEL CORP·Filed 1998·Granted Mar 4, 2003·22 cites·26 claims
- 3370US6709885B2Method of fabricating image sensors using a thin film photodiode above active CMOS circuitryINTEL CORP·Filed 2002·Granted Mar 23, 2004·14 cites·16 claims
- 3469US6400015B1Method of creating shielded structures to protect semiconductor devicesINTEL CORP·Filed 2000·Granted Jun 4, 2002·12 cites·10 claims
- 3568US6777320B1In-plane on-chip decoupling capacitors and method for making sameINTEL CORP·Filed 1998·Granted Aug 17, 2004·29 cites·35 claims
- 3666US4039698AMethod for making patterned platinum metallizationBELL TELEPHONE LABOR INC·Filed 1976·Granted Aug 2, 1977·22 cites·10 claims
- 3765US5880030AUnlanded via structure and method for making sameINTEL CORP·Filed 1997·Granted Mar 9, 1999·30 cites·13 claims
- 3862US6310400B1Apparatus for capacitively coupling electronic devicesINTEL CORP·Filed 1997·Granted Oct 30, 2001·23 cites·24 claims
- 3958US4465346AOptically stabilized telescopeFRASER DAVID B·Filed 1978·Granted Aug 14, 1984·17 cites·5 claims
- 4056US6239019B1Interconnect structure using a combination of hard dielectric and polymer as interlayer dielectricsINTEL CORP·Filed 1999·Granted May 29, 2001·17 cites·15 claims
- 4151US6949476B2Method of creating shielded structures to protect semiconductor devicesINTEL CORP·Filed 2003·Granted Sep 27, 2005·3 cites·7 claims
- 4250US4407933AAlignment marks for electron beam lithographyBELL TELEPHONE LABOR INC·Filed 1981·Granted Oct 4, 1983·14 cites·12 claims
- 4348US6949831B2In-plane on-chip decoupling capacitors and method for making sameINTEL CORP·Filed 2004·Granted Sep 27, 2005·2 cites·25 claims
- 4447US4400867AHigh conductivity metallization for semiconductor integrated circuitsBELL TELEPHONE LABOR INC·Filed 1982·Granted Aug 30, 1983·13 cites·16 claims
- 4544US6689702B2High dielectric constant metal oxide gate dielectricsINTEL CORP·Filed 2002·Granted Feb 10, 2004·1 cites·16 claims
- 4644US4022930AMultilevel metallization for integrated circuitsBELL TELEPHONE LABOR INC·Filed 1975·Granted May 10, 1977·9 cites·4 claims
- 4742US5977634ADiffusion barrier for electrical interconnects in an integrated circuitINTEL CORP·Filed 1997·Granted Nov 2, 1999·8 cites·22 claims
- 4830US2001046744A1Transistor with reduced series resistance junction regionsFiled 1999·Application pending·0 cites
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