Inventor · disambiguated record
Wah S. Wong
Also filed as: WONG WAH S · WONG WAH-SANG
19 granted patents·1 pending application·413 citations·filing 1986–2014
95Inventor score
Top patents by PatentIndex Score
20 records- 0197US7514759B1Piezoelectric MEMS integration with GaN technologyHRL LAB LLC·Filed 2005·Granted Apr 7, 2009·125 cites·32 claims
- 0289US7989277B1Integrated structure with transistors and Schottky diodes and process for fabricating the sameHRL LAB LLC·Filed 2007·Granted Aug 2, 2011·18 cites·14 claims
- 0386US8728884B1Enhancement mode normally-off gallium nitride heterostructure field effect transistorHUSSAIN TAHIR·Filed 2009·Granted May 20, 2014·13 cites·10 claims
- 0486US8368119B1Integrated structure with transistors and schottky diodes and process for fabricating the sameHRL LAB LLC·Filed 2011·Granted Feb 5, 2013·8 cites·13 claims
- 0578US9640680B1Wide-band transparent electrical contacts and interconnects for FPAS and a method of making the sameHRL LAB LLC·Filed 2014·Granted May 2, 2017·3 cites·26 claims
- 0675US5773897AFlip chip monolithic microwave integrated circuit with mushroom-shaped, solder-capped, plated metal bumpsRAYTHEON CO·Filed 1997·Granted Jun 30, 1998·47 cites·3 claims
- 0767US5406122AMicroelectronic circuit structure including conductor bridges encapsulated in inorganic dielectric passivation layerHUGHES AIRCRAFT CO·Filed 1993·Granted Apr 11, 1995·43 cites·14 claims
- 0865US5502002APolyimide passivation of GaAs microwave monolithic integrated circuit flip-chipHUGHES AIRCRAFT CO·Filed 1994·Granted Mar 26, 1996·41 cites·5 claims
- 0959US6830945B2Method for fabricating a non-planar nitride-based heterostructure field effect transistorHRL LAB LLC·Filed 2003·Granted Dec 14, 2004·5 cites·44 claims
- 1058US5877560AFlip chip microwave module and fabrication methodRAYTHEON CO·Filed 1997·Granted Mar 2, 1999·26 cites·3 claims
- 1154US9190534B1Enhancement mode normally-off gallium nitride heterostructure field effect transistorHRL LAB LLC·Filed 2014·Granted Nov 17, 2015·0 cites·12 claims
- 1252US4855796ABeam lead mixer diodeHUGHES AIRCRAFT CO·Filed 1986·Granted Aug 8, 1989·16 cites·12 claims
- 1349US5708283AFlip chip high power monolithic integrated circuit thermal bumpsHUGHES AIRCRAFT CO·Filed 1996·Granted Jan 13, 1998·15 cites·7 claims
- 1448US7247893B2Non-planar nitride-based heterostructure field effect transistorHRL LAB LLC·Filed 2004·Granted Jul 24, 2007·1 cites·15 claims
- 1547US5616517AFlip chip high power monolithic integrated circuit thermal bumps and fabrication methodHUGHES AIRCRAFT CO·Filed 1996·Granted Apr 1, 1997·14 cites·10 claims
- 1647US4800420ATwo-terminal semiconductor diode arrangementHUGHES AIRCRAFT CO·Filed 1987·Granted Jan 24, 1989·15 cites·18 claims
- 1739US5998817AHigh power prematched MMIC transistor with improved ground potential continuityRAYTHEON CO·Filed 1997·Granted Dec 7, 1999·9 cites·24 claims
- 1835US5514838ACircuit structure with non-migrating silver contactsHUGHES AIRCRAFT CO·Filed 1994·Granted May 7, 1996·8 cites·15 claims
- 1931US5861341APlated nickel-gold/dielectric interface for passivated MMICsRAYTHEON CO·Filed 1996·Granted Jan 19, 1999·6 cites·7 claims
- 2030US2004021152A1Ga/A1GaN Heterostructure Field Effect Transistor with dielectric recessed gateFiled 2002·Application pending·0 cites
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