Inventor · disambiguated record
Woong-Hee Sohn
Also filed as: SOHN WOONG H · SOHN WOONG-HEE
27 granted patents·15 pending applications·180 citations·filing 2004–2017
96Inventor score
Top patents by PatentIndex Score
42 records- 0193US9178039B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Nov 3, 2015·18 cites·14 claims
- 0290US8916922B2Vertical memory devices and methods of manufacturing the sameJANG KYUNG-TAE·Filed 2012·Granted Dec 23, 2014·13 cites·28 claims
- 0387US10103152B2Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Oct 16, 2018·6 cites·20 claims
- 0487US9184178B2Vertical memory devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Nov 10, 2015·7 cites·17 claims
- 0587US8173506B2Method of forming buried gate electrode utilizing formation of conformal gate oxide and gate electrode layersJUNG EUN-JI·Filed 2009·Granted May 8, 2012·17 cites·17 claims
- 0685US7696552B2Semiconductor devices including high-k dielectric materialsSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Apr 13, 2010·12 cites·7 claims
- 0784US7534709B2Semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted May 19, 2009·12 cites·10 claims
- 0882US7521316B2Methods of forming gate structures for semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Apr 21, 2009·8 cites·46 claims
- 0981US7544597B2Method of forming a semiconductor device including an ohmic layerSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jun 9, 2009·3 cites·20 claims
- 1081US7214620B2Methods of forming silicide films with metal films in semiconductor devices and contacts including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted May 8, 2007·26 cites·20 claims
- 1179US7172967B2Methods for forming cobalt layers including introducing vaporized cobalt precursors and methods for manufacturing semiconductor devices using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Feb 6, 2007·19 cites·22 claims
- 1278US7875939B2Semiconductor device including an ohmic layerSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Jan 25, 2011·2 cites·6 claims
- 1378US7547942B2Nonvolatile memory devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jun 16, 2009·7 cites·11 claims
- 1478US7371669B2Method of forming a gate of a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted May 13, 2008·7 cites·22 claims
- 1576US7759263B2Methods for fabricating improved gate dielectricsSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jul 20, 2010·5 cites·16 claims
- 1676US7550353B2Method of forming semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jun 23, 2009·6 cites·22 claims
- 1769US10373831B2Method of manufacturing semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Aug 6, 2019·1 cites·8 claims
- 1869US8034701B2Methods of forming recessed gate electrodes having covered layer interfacesSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Oct 11, 2011·3 cites·13 claims
- 1969US7772637B2Semiconductor devices including gate structures and leakage barrier oxidesSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Aug 10, 2010·3 cites·15 claims
- 2068US7582931B2Recessed gate electrodes having covered layer interfaces and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Sep 1, 2009·3 cites·5 claims
- 2163US7238612B2Methods of forming a double metal salicide layer and methods of fabricating semiconductor devices incorporating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jul 3, 2007·2 cites·21 claims
- 2254US2015017797A1Method of manufacturing semiconductor device including metal-containing conductive lineSAMSUNG ELECTRONICS CO LTD·Filed 2014·Application pending·0 cites
- 2351US2007099421A1Methods For Forming Cobalt Layers Including Introducing Vaporized Cobalt Precursors And Methods For Manufacturing Semiconductor Devices Using The SameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 2450US2013075909A1Semiconductor device including metal-containing conductive line and method of manufacturing the samePARK JAE-HWA·Filed 2012·Application pending·0 cites
- 2549US7666786B2Methods of fabricating semiconductor devices having a double metal salicide layerSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Feb 23, 2010·0 cites·12 claims
- 2647US7879737B2Methods for fabricating improved gate dielectricsSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Feb 1, 2011·0 cites·12 claims
- 2746US7897500B2Methods for forming silicide conductors using substrate maskingSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Mar 1, 2011·0 cites·16 claims
- 2844US2007052043A1Multilayer gate electrode, semiconductor device having the same and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 2943US2009101984A1Semiconductor device having gate electrode including metal layer and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 3043US2006292784A1Methods of Forming Integrated Circuit Devices Including Memory Cell Gates and High Voltage Transistor Gates Using Plasma Re-OxidationSOHN WOONG H·Filed 2006·Application pending·0 cites
- 3142US8119526B2Method of forming a metal layer and a method of fabricating a semiconductor deviceJUNG EUN-JI·Filed 2010·Granted Feb 21, 2012·0 cites·20 claims
- 3242US2006115967A1Methods of manufacturing a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Application pending·0 cites
- 3341US7312150B2Method of forming cobalt disilicide layer and method of manufacturing semiconductor device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Dec 25, 2007·0 cites·34 claims
- 3441US2008093660A1Flash memory device and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 3540US2007105397A1Method for removing hydrogen gas from a chamberPARK JAE-HWA·Filed 2006·Application pending·0 cites
- 3639US2006068535A1Methods of fabricating semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2005·Application pending·0 cites
- 3739US2006051921A1Methods of manufacturing semiconductor device gate structures by performing a surface treatment on a gate oxide layerSAMSUNG ELECTRONICS CO LTD·Filed 2005·Application pending·0 cites
- 3838US2005282338A1Methods of forming gate patterns using isotropic etching of gate insulating layersYOO JONG-RYEOL·Filed 2005·Application pending·0 cites
- 3937US2007018220A1Semiconductor device, gate electrode and method of fabricating the sameLEE CHANG-WON·Filed 2006·Application pending·0 cites
- 4035US2017309491A1Method of forming tungsten film and method of fabricating semiconductor device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Application pending·0 cites
- 4135US2006079075A1Gate structures with silicide sidewall barriers and methods of manufacturing the sameLEE CHANG-WON·Filed 2005·Application pending·0 cites
- 4234US8486783B2Semiconductor device and method of manufacturing the sameSOHN WOONG-HEE·Filed 2010·Granted Jul 16, 2013·0 cites·17 claims
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