Inventor · disambiguated record
Wipawan Yindeepol
Also filed as: YINDEEPOL WIPAWAN
7 granted patents·449 citations·filing 1995–2004
89Inventor score
Files withNAT SEMICONDUCTOR CORP7
Top patents by PatentIndex Score
7 records- 0193US5914523ASemiconductor device trench isolation structure with polysilicon bias voltage contactNAT SEMICONDUCTOR CORP·Filed 1998·Granted Jun 22, 1999·137 cites·6 claims
- 0290US6121148ASemiconductor device trench isolation structure with polysilicon bias voltage contactNAT SEMICONDUCTOR CORP·Filed 1999·Granted Sep 19, 2000·100 cites·3 claims
- 0382US5811315AMethod of forming and planarizing deep isolation trenches in a silicon-on-insulator (SOI) structureNAT SEMICONDUCTOR CORP·Filed 1997·Granted Sep 22, 1998·75 cites·20 claims
- 0482US5581110AIntegrated circuit with trenches and an oxygen barrier layerNAT SEMICONDUCTOR CORP·Filed 1995·Granted Dec 3, 1996·62 cites·47 claims
- 0569US6362064B2Elimination of walkout in high voltage trench isolated devicesNAT SEMICONDUCTOR CORP·Filed 1998·Granted Mar 26, 2002·40 cites·3 claims
- 0664US5911109AMethod of forming an integrated circuit including filling and planarizing a trench having an oxygen barrier layerNAT SEMICONDUCTOR CORP·Filed 1997·Granted Jun 8, 1999·27 cites·41 claims
- 0758US6979879B1Trim zener using double poly processNAT SEMICONDUCTOR CORP·Filed 2004·Granted Dec 27, 2005·8 cites·18 claims
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →