Inventor · disambiguated record
Tung-Po Chen
Also filed as: CHEN TUNG-PO
29 granted patents·7 pending applications·430 citations·filing 1995–2008
97Inventor score
Files withUNITED MICROELECTRONICS CORP27POWERCHIP SEMICONDUCTOR CORP3CHEN TUNG-PO2NAT SCIENCE COUNCIL1
Top patents by PatentIndex Score
36 records- 0192US6228730B1Method of fabricating field effect transistorUNITED MICROELECTRONICS CORP·Filed 1999·Granted May 8, 2001·89 cites·17 claims
- 0285US6255152B1Method of fabricating CMOS using Si-B layer to form source/drain extension junctionUNITED MICROELECTRONICS CORP·Filed 1999·Granted Jul 3, 2001·65 cites·57 claims
- 0374US6133130AMethod for fabricating an embedded dynamic random access memory using self-aligned silicide technologyUNITED MICROELECTRONICS CORP·Filed 1998·Granted Oct 17, 2000·35 cites·20 claims
- 0471US6022795ASalicide formation processUNITED MICROELECTRONICS CORP·Filed 1998·Granted Feb 8, 2000·23 cites·20 claims
- 0570US6297112B1Method of forming a MOS transistorUNITED MICROELECTRONICS CORP·Filed 2000·Granted Oct 2, 2001·14 cites·5 claims
- 0663US6156126AMethod for reducing or avoiding the formation of a silicon recess in SDE junction regionsUNITED MICROELECTRONICS CORP·Filed 2000·Granted Dec 5, 2000·8 cites·19 claims
- 0762US7273787B2Method for manufacturing gate dielectric layerPOWERCHIP SEMICONDUCTOR CORP·Filed 2005·Granted Sep 25, 2007·4 cites·15 claims
- 0860US6316321B1Method for forming MOSFETUNITED MICROELECTRONICS CORP·Filed 1999·Granted Nov 13, 2001·18 cites·12 claims
- 0960US6177334B1Manufacturing method capable of preventing corrosion of metal oxide semiconductorUNITED MICROELECTRONICS CORP·Filed 1998·Granted Jan 23, 2001·23 cites·7 claims
- 1056US7074674B1Method for manufacturing one-time electrically programmable read only memoryPOWERCHIP SEMICONDUCTOR CORP·Filed 2005·Granted Jul 11, 2006·1 cites·17 claims
- 1155US6225155B1Method of forming salicide in embedded dynamic random access memoryUNITED MICROELECTRONICS CORP·Filed 1998·Granted May 1, 2001·15 cites·16 claims
- 1253US5893751ASelf-aligned silicide manufacturing methodUNITED MICROELECTRONICS CORP·Filed 1996·Granted Apr 13, 1999·14 cites·14 claims
- 1352US6060349APlanarization on an embedded dynamic random access memoryUNITED MICROELECTRONICS CORP·Filed 1998·Granted May 9, 2000·13 cites·10 claims
- 1452US5858849AMethod of manufacturing self-aligned silicideUNITED MICROELECTRONICS CORP·Filed 1998·Granted Jan 12, 1999·13 cites·9 claims
- 1550US2009186459A1Manufacturing method of non-volatile memoryPOWERCHIP SEMICONDUCTOR CORP·Filed 2008·Application pending·0 cites
- 1649US6670249B1Process for forming high temperature stable self-aligned metal silicide layerUNITED MICROELECTRONICS CORP·Filed 2000·Granted Dec 30, 2003·3 cites·12 claims
- 1749US6124621AStructure of a spacerUNITED MICROELECTRONICS CORP·Filed 1999·Granted Sep 26, 2000·11 cites·13 claims
- 1848US6156633AProcess for forming high temperature stable self-aligned metal silicide layerUNITED MICROELECTRONICS CORP·Filed 1998·Granted Dec 5, 2000·9 cites·24 claims
- 1947US6350646B1Method for reducing thermal budget in node contact applicationUNITED MICROELECTRONICS CORP·Filed 2000·Granted Feb 26, 2002·2 cites·11 claims
- 2045US6187674B1Manufacturing method capable of preventing corrosion and contamination of MOS gateUNITED MICROELECTRONICS CORP·Filed 1998·Granted Feb 13, 2001·9 cites·19 claims
- 2145US5970379AMethod of reducing loss of metal silicide in pre-metal etchingUNITED MICROELECTRONICS CORP·Filed 1996·Granted Oct 19, 1999·9 cites·17 claims
- 2244US6187644B1Method of removing oxynitride by forming an offset spacerUNITED MICROELECTRONICS CORP·Filed 1999·Granted Feb 13, 2001·8 cites·13 claims
- 2344US2006019445A1Non-volatile memory and manufacturing method thereofCHEN TUNG-PO·Filed 2005·Application pending·0 cites
- 2442US6150205AMethod of fabricating dual gateUNITED MICROELECTRONICS CORP·Filed 1999·Granted Nov 21, 2000·7 cites·28 claims
- 2542US5674777AMethod for forming silicon-boron binary compound layer as boron diffusion source in silicon electronic deviceNAT SCIENCE COUNCIL·Filed 1995·Granted Oct 7, 1997·9 cites·17 claims
- 2640US6197672B1Method for forming polycide dual gateUNITED MICROELECTRONICS CORP·Filed 1998·Granted Mar 6, 2001·6 cites·17 claims
- 2740US6153520AMethod for fabricating self-aligned silicideUNITED MICROELECTRONICS CORP·Filed 1999·Granted Nov 28, 2000·6 cites·8 claims
- 2840US2006030136A1Method of fabricating a gate oxide layerCHEN TUNG-PO·Filed 2004·Application pending·0 cites
- 2939US2002025678A1Method for reducing thermal budget in node contact applicationUNITED MICROELECTRONICS CORP·Filed 2001·Application pending·0 cites
- 3037US6010958AMethod for improving the planarization of dielectric layer in the fabrication of metallic interconnectsUNITED MICROELECTRONICS CORP·Filed 1997·Granted Jan 4, 2000·6 cites·13 claims
- 3137US2001010962A1Method of fabricating field effect transistorFiled 2001·Application pending·0 cites
- 3237US2003186532A1Method of forming a titanium-containing glue layerFiled 2002·Application pending·0 cites
- 3337US2002025676A1Salicide formation processFiled 2001·Application pending·0 cites
- 3435US6426256B1Method for fabricating an embedded DRAM with self-aligned borderless contactsUNITED MICROELECTRONICS CORP·Filed 1999·Granted Jul 30, 2002·5 cites·12 claims
- 3533US6316311B1Method of forming borderless contactUNITED MICROELECTRONICS CORP·Filed 1998·Granted Nov 13, 2001·4 cites·17 claims
- 3632US6277721B1Salicide formation processUNITED MICROELECTRONICS CORP·Filed 1999·Granted Aug 21, 2001·1 cites·16 claims
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