Inventor · disambiguated record
Haruo Sunakawa
Also filed as: SUNAKAWA HARUO
10 granted patents·4 pending applications·985 citations·filing 1988–2024
93Inventor score
Top patents by PatentIndex Score
14 records- 0196US6809351B2Group III-V compound semiconductor crystal structure and method of epitaxial growth of the same as well as semiconductor device including the sameNEC CORP·Filed 2002·Granted Oct 26, 2004·129 cites·14 claims
- 0296US6252261B1GaN crystal film, a group III element nitride semiconductor wafer and a manufacturing process thereforNEC CORP·Filed 1999·Granted Jun 26, 2001·319 cites·61 claims
- 0395US6348096B1Method for manufacturing group III-V compound semiconductorsNEC CORP·Filed 1998·Granted Feb 19, 2002·214 cites·27 claims
- 0493US6555845B2Method for manufacturing group III-V compound semiconductorsNEC CORP·Filed 2001·Granted Apr 29, 2003·67 cites·3 claims
- 0590US4859627AGroup VI doping of III-V semiconductors during ALENEC CORP·Filed 1988·Granted Aug 22, 1989·104 cites·11 claims
- 0690US4845049ADoping III-V compound semiconductor devices with group VI monolayers using ALENEC CORP·Filed 1988·Granted Jul 4, 1989·100 cites·3 claims
- 0777US5843227ACrystal growth method for gallium nitride filmsNEC CORP·Filed 1997·Granted Dec 1, 1998·32 cites·9 claims
- 0877US2025058328A1Method of producing inorganic material and apparatus of producing inorganic materialFURUKAWA CO LTD·Filed 2024·Application pending·0 cites
- 0960US12168234B2Method of producing inorganic material and apparatus of producing inorganic materialFURUKAWA CO LTD·Filed 2020·Granted Dec 17, 2024·0 cites·11 claims
- 1052US6096130AMethod of crystal growth of a GaN layer over a GaAs substrateNEC CORP·Filed 1997·Granted Aug 1, 2000·17 cites·17 claims
- 1143US2018163323A1Method for producing group 13 nitride single crystal and apparatus for producing group 13 nitride single crystalSATOH TAKASHI·Filed 2018·Application pending·0 cites
- 1238US2003207125A1Base substrate for crystal growth and manufacturing method of substrate by using the sameNEC CORP·Filed 2003·Application pending·0 cites
- 1336US2001026950A1Method of manufacturing a nitrogen-based semiconductor substrate and a semiconductor element by using the sameNEC CORP·Filed 2001·Application pending·0 cites
- 1433US5825053AHeterostructure III-V nitride semiconductor device including InP substrateNEC CORP·Filed 1997·Granted Oct 20, 1998·3 cites·3 claims
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