Inventor · disambiguated record
Yen-Ru Lee
Also filed as: LEE YEN-RU
54 granted patents·10 pending applications·111 citations·filing 2011–2025
98Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD60CHUANG HARRY HAK-LAY1LEE YEN-RU1SU LILLY1TAIWAN SEMICONDUCTOR MANFACTURING CO LTD1
Top patents by PatentIndex Score
64 records- 0197US9831116B2FETS and methods of forming FETsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 28, 2017·23 cites·20 claims
- 0296US11948999B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 2, 2024·2 cites·20 claims
- 0395US10038095B2V-shape recess profile for embedded source/drain epitaxyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 31, 2018·11 cites·20 claims
- 0494US11728208B2FETS and methods of forming FETSTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 15, 2023·2 cites·20 claims
- 0594US11677027B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 13, 2023·2 cites·20 claims
- 0694US10483396B1Interfacial layer between fin and source/drain regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 19, 2019·10 cites·20 claims
- 0792US10103249B2FinFET device and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Oct 16, 2018·7 cites·20 claims
- 0891US11004724B2FETS and methods of forming FETSTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 11, 2021·5 cites·19 claims
- 0990US11063152B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 13, 2021·4 cites·20 claims
- 1090US10879355B2Profile design for improved device performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 29, 2020·5 cites·20 claims
- 1190US9905641B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 27, 2018·5 cites·20 claims
- 1289US8927374B2Semiconductor device and fabrication method thereofSU LILLY·Filed 2011·Granted Jan 6, 2015·10 cites·20 claims
- 1387US8835267B2Semiconductor device and fabrication method thereofLEE YEN-RU·Filed 2011·Granted Sep 16, 2014·9 cites·20 claims
- 1486US12471311B2Semiconductor Fin-like field-effect transistor (FinFET) device including source/drain structure with boron doped capping layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Nov 11, 2025·0 cites·20 claims
- 1586US12191393B2Low Ge isolated epitaxial layer growth over nano-sheet architecture design for RP reductionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 7, 2025·1 cites·20 claims
- 1686US2025006549A1FETS and Methods of Forming FETSTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1785US11133416B2Methods of forming semiconductor devices having plural epitaxial layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 28, 2021·3 cites·20 claims
- 1884US11075120B2FinFET device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 27, 2021·2 cites·20 claims
- 1982US10468482B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 5, 2019·2 cites·20 claims
- 2082US2024387731A1Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2181US12336210B2Source/drain structure for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 17, 2025·0 cites·20 claims
- 2281US12218240B2Source/drain regions of FinFET devices and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 4, 2025·0 cites·20 claims
- 2381US8889501B2Methods for forming MOS devices with raised source/drain regionsCHUANG HARRY-HAK-LAY·Filed 2012·Granted Nov 18, 2014·6 cites·20 claims
- 2481US2024096958A1Supportive layer in source/drains of finfet devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2581US2025287630A1Source/drain structure for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2680US12419076B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 16, 2025·0 cites·20 claims
- 2780US2024395625A1FinFET Device and MethodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2879US11855142B2Supportive layer in source/drains of FinFET devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·0 cites·20 claims
- 2979US2024274667A1Semiconductor Device and Method of ManufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3077US11735668B2Interfacial layer between fin and source/drain regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 22, 2023·0 cites·20 claims
- 3177US11171209B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 9, 2021·1 cites·20 claims
- 3276US11929401B2Method of forming a source/drainTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 12, 2024·0 cites·20 claims
- 3376US2025089295A1Low ge isolated epitaxial layer growth over nano-sheet architecture design for rp reductionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3476US2024213330A1Method of Forming a Source/DrainTAIWAN SEMICONDUCTOR MANFACTURING CO LTD·Filed 2024·Application pending·0 cites
- 3574US12112986B2FinFET device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 8, 2024·0 cites·20 claims
- 3674US12002854B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 4, 2024·0 cites·20 claims
- 3774US11257951B2Method of making semiconductor device having first and second epitaxial materialsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 22, 2022·0 cites·20 claims
- 3873US11735664B2Source/drain regions of FINFET devices and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 22, 2023·0 cites·20 claims
- 3972US12034061B2Method for forming semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 9, 2024·0 cites·20 claims
- 4072US11575026B2Source/drain structure for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 7, 2023·0 cites·20 claims
- 4172US11482620B2Interfacial layer between Fin and source/drain regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 25, 2022·0 cites·20 claims
- 4272US11476331B2Supportive layer in source/drains of FinFET devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 18, 2022·0 cites·20 claims
- 4372US11430878B2Method for fabricating semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 30, 2022·0 cites·20 claims
- 4472US11121255B2V-shape recess profile for embedded source/drain epitaxyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 14, 2021·0 cites·20 claims
- 4567US11217672B2Method of forming a source/drainTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 4, 2022·0 cites·20 claims
- 4666US10763366B2V-shape recess profile for embedded source/drain epitaxyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 1, 2020·0 cites·20 claims
- 4765US11271096B2Method for forming fin field effect transistor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 8, 2022·0 cites·20 claims
- 4864US10991795B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 27, 2021·0 cites·20 claims
- 4963US11107923B2Source/drain regions of FinFET devices and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 31, 2021·0 cites·20 claims
- 5063US10651309B2V-shape recess profile for embedded source/drain epitaxyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 12, 2020·0 cites·20 claims
Showing the top 50 of 64 patent records by PatentIndex Score.
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