Inventor · disambiguated record
Wesley Skinner
Also filed as: SKINNER WESLEY · SKINNER WESLEY J
8 granted patents·2 pending applications·412 citations·filing 1999–2008
90Inventor score
Technology areasH10P
Top patents by PatentIndex Score
10 records- 0197US7259036B2Methods of forming doped and un-doped strained semiconductor materials and semiconductor films by gas-cluster-ion-beam irradiation and materials and film productsTEL EPION INC·Filed 2005·Granted Aug 21, 2007·131 cites·40 claims
- 0294US7410890B2Formation of doped regions and/or ultra-shallow junctions in semiconductor materials by gas-cluster ion irradiationTEL EPION INC·Filed 2005·Granted Aug 12, 2008·28 cites·52 claims
- 0391US6812147B2GCIB processing to improve interconnection vias and improved interconnection viaEPION CORP·Filed 2002·Granted Nov 2, 2004·54 cites·31 claims
- 0491US6613240B2Method and apparatus for smoothing thin conductive films by gas cluster ion beamEPION CORP·Filed 2000·Granted Sep 2, 2003·64 cites·22 claims
- 0587US6624081B2Enhanced etching/smoothing of dielectric surfacesEPION CORP·Filed 2001·Granted Sep 23, 2003·36 cites·8 claims
- 0687US6331227B1Enhanced etching/smoothing of dielectric surfacesEPION CORP·Filed 1999·Granted Dec 18, 2001·77 cites·42 claims
- 0786US7396745B2Formation of ultra-shallow junctions by gas-cluster ion irradiationTEL EPION INC·Filed 2005·Granted Jul 8, 2008·12 cites·35 claims
- 0882US7626183B2Methods for modifying features of a workpiece using a gas cluster ion beamTEL EPION INC·Filed 2007·Granted Dec 1, 2009·10 cites·15 claims
- 0953US2008245974A1Method of introducing material into a substrate by gas-cluster ion beam irradiationTEL EPION INC·Filed 2008·Application pending·0 cites
- 1042US2006292762A1Replacement gate field effect transistor with germanium or SiGe channel and manufacturing method for same using gas-cluster ion irradiationEPION CORP·Filed 2006·Application pending·0 cites
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