Inventor · disambiguated record
Thomas G. Tetreault
Also filed as: TETREAULT THOMAS G
4 granted patents·2 pending applications·44 citations·filing 2005–2014
75Inventor score
Top patents by PatentIndex Score
6 records- 0194US7410890B2Formation of doped regions and/or ultra-shallow junctions in semiconductor materials by gas-cluster ion irradiationTEL EPION INC·Filed 2005·Granted Aug 12, 2008·28 cites·52 claims
- 0277US7564024B2Methods and apparatus for assigning a beam intensity profile to a gas cluster ion beam used to process workpiecesTEL EPION INC·Filed 2007·Granted Jul 21, 2009·11 cites·23 claims
- 0372US7883999B2Method for increasing the penetration depth of material infusion in a substrate using a gas cluster ion beamTEL EPION INC·Filed 2008·Granted Feb 8, 2011·4 cites·25 claims
- 0460US9355864B2Method for increasing adhesion of copper to polymeric surfacesTEL NEXX INC·Filed 2014·Granted May 31, 2016·1 cites·20 claims
- 0553US2008245974A1Method of introducing material into a substrate by gas-cluster ion beam irradiationTEL EPION INC·Filed 2008·Application pending·0 cites
- 0650US2009233004A1Method and system for depositing silicon carbide film using a gas cluster ion beamTEL EPION INC·Filed 2008·Application pending·0 cites
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