Inventor · disambiguated record
Kazuhide Sumiyoshi
Also filed as: SUMIYOSHI KAZUHIDE
10 granted patents·3 pending applications·13 citations·filing 2009–2022
81Inventor score
Top patents by PatentIndex Score
13 records- 0180US8507305B2Group-III nitride semiconductor laser device, method of fabricating group-III nitride semiconductor laser device, and epitaxial substrateYOSHIZUMI YUSUKE·Filed 2012·Granted Aug 13, 2013·4 cites·16 claims
- 0274US8349078B2Method of forming nitride semiconductor epitaxial layer and method of manufacturing nitride semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2010·Granted Jan 8, 2013·3 cites·35 claims
- 0371US8502310B2III nitride semiconductor electronic device, method for manufacturing III nitride semiconductor electronic device, and III nitride semiconductor epitaxial waferSHIOMI HIROMU·Filed 2009·Granted Aug 6, 2013·5 cites·20 claims
- 0470US9425348B2Group III nitride semiconductor device, and method for fabricating group III nitride semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Granted Aug 23, 2016·1 cites·13 claims
- 0569US12278102B2Semiconductor device with silicon nitride passivation filmSUMITOMO ELECTRIC INDUSTRIES·Filed 2022·Granted Apr 15, 2025·0 cites·4 claims
- 0656US2021066065A1Method for forming silicon nitride passivation film, method for manufacturing semiconductor device and semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2020·Application pending·0 cites
- 0750US11430653B2Method of manufacturing high electron mobility transistor and high electron mobility transistorSUMITOMO ELECTRIC INDUSTRIES·Filed 2020·Granted Aug 30, 2022·0 cites·4 claims
- 0848US10832905B2Process of forming silicon nitride (SiN) film and semiconductor device providing SiN filmSUMITOMO ELECTRIC INDUSTRIES·Filed 2018·Granted Nov 10, 2020·0 cites·16 claims
- 0947US2011158277A1Group-iii nitride semiconductor laser device, method of fabricating group-iii nitride semiconductor laser device, and epitaxial substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2010·Application pending·0 cites
- 1046US10741384B2Process of forming silicon nitride filmSUMITOMO ELECTRIC INDUSTRIES·Filed 2018·Granted Aug 11, 2020·0 cites·14 claims
- 1146US10283609B2Semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2017·Granted May 7, 2019·0 cites·5 claims
- 1245US10566184B2Process of depositing silicon nitride (SiN) film on nitride semiconductorSUMITOMO ELECTRIC INDUSTRIES·Filed 2018·Granted Feb 18, 2020·0 cites·9 claims
- 1333US2012104556A1Power device and method for manufacturing the sameKIYAMA MAKOTO·Filed 2010·Application pending·0 cites
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