Inventor · disambiguated record
Chin-Yuan Ko
Also filed as: KO CHIN-YUAN
10 granted patents·3 pending applications·23 citations·filing 2005–2025
83Inventor score
Top patents by PatentIndex Score
13 records- 0186US9553508B1Protection circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 24, 2017·6 cites·20 claims
- 0277US9780106B2Two-transistor non-volatile memory cell and related program and read methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Oct 3, 2017·3 cites·20 claims
- 0375US8947938B2Two-transistor non-volatile memory cell and related program and read methodsTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Feb 3, 2015·4 cites·20 claims
- 0473US7307880B2One time programming memory cell using MOS deviceTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Dec 11, 2007·9 cites·22 claims
- 0573US2024379530A1Interconnect structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0667US12424537B2Interconnect structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 23, 2025·0 cites·20 claims
- 0765US2025226231A1Semiconductor structure including discharge structures and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0858US12293918B2Semiconductor structure including discharge structures and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 6, 2025·0 cites·20 claims
- 0951US9979184B2Protection circuit for output deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 22, 2018·0 cites·20 claims
- 1049US7453280B1Method for testing semiconductor devicesTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Nov 18, 2008·1 cites·15 claims
- 1143US9240401B2Semiconductor device and method of manufacturing a semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jan 19, 2016·0 cites·20 claims
- 1242US10157907B2Semiconductor device and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Dec 18, 2018·0 cites·20 claims
- 1337US2008073724A1Double layer etch stop layer structure for advanced semiconductor processing technologyTAIWAN SEMICONDUCTOR MFG·Filed 2006·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →