Inventor · disambiguated record
Ibrahim Khalil
Also filed as: KHALIL IBRAHIM · KHALIL IBRAHIM M · KHALIL IBRAHIM MUTASIM IBRAHIM
26 granted patents·5 pending applications·97 citations·filing 2008–2025
94Inventor score
Files withNXP USA INC23NXP BV3FREESCALE SEMICONDUCTOR INC2FORSCHUNGSVERBUD BERLIN E V1GESCHE ROLAND1
Top patents by PatentIndex Score
31 records- 0196US9653410B1Transistor with shield structure, packaged device, and method of manufactureFREESCALE SEMICONDUCTOR INC·Filed 2016·Granted May 16, 2017·43 cites·17 claims
- 0293US11430874B2Semiconductor device with a crossing regionNXP USA INC·Filed 2020·Granted Aug 30, 2022·4 cites·19 claims
- 0392US11121072B1Semiconductor device with isolation structureNXP USA INC·Filed 2020·Granted Sep 14, 2021·3 cites·17 claims
- 0492US10147686B1Transistor with shield structure, packaged device, and method of manufactureNXP USA INC·Filed 2017·Granted Dec 4, 2018·11 cites·16 claims
- 0591US12327778B2Transistor die with primary and ancillary transistor elementsNXP USA INC·Filed 2022·Granted Jun 10, 2025·2 cites·24 claims
- 0691US10103233B1Transistor die with drain via arrangement, and methods of manufacture thereofNXP USA INC·Filed 2017·Granted Oct 16, 2018·11 cites·20 claims
- 0791US9800213B1Amplifier devices with impedance matching networks that incorporate a capacitor integrated with a bond padFREESCALE SEMICONDUCTOR INC·Filed 2016·Granted Oct 24, 2017·10 cites·26 claims
- 0886US12119300B2Transistor circuits with shielded reference transistorsNXP USA INC·Filed 2022·Granted Oct 15, 2024·1 cites·18 claims
- 0985US10593619B1Transistor shield structure, packaged device, and method of manufactureNXP USA INC·Filed 2018·Granted Mar 17, 2020·5 cites·17 claims
- 1082US11502026B2Transistor with flip-chip topology and power amplifier containing sameNXP USA INC·Filed 2020·Granted Nov 15, 2022·2 cites·20 claims
- 1181US11842957B2Amplifier modules and systems with ground terminals adjacent to power amplifier dieNXP USA INC·Filed 2020·Granted Dec 12, 2023·1 cites·19 claims
- 1278US11444044B2Transistor die with output bondpad at the input side of the die, and power amplifiers including such diesNXP USA INC·Filed 2019·Granted Sep 13, 2022·2 cites·27 claims
- 1372US12336254B2Semiconductor device with conductive elements formed over dielectric layers and method of fabrication thereforNXP BV·Filed 2024·Granted Jun 17, 2025·0 cites·19 claims
- 1471US2025267913A1Transistors with self-aligned source-connected field platesNXP USA INC·Filed 2025·Application pending·0 cites
- 1563US12349433B2Transistors with self-aligned source-connected field platesNXP USA INC·Filed 2021·Granted Jul 1, 2025·0 cites·10 claims
- 1659US11923424B2Semiconductor device with conductive elements formed over dielectric layers and method of fabrication thereforNXP BV·Filed 2020·Granted Mar 5, 2024·0 cites·17 claims
- 1757US12159845B2Transistor with integrated passive componentsNXP USA INC·Filed 2022·Granted Dec 3, 2024·0 cites·20 claims
- 1856US8324971B2Self-adjusting gate bias network for field effect transistorsGESCHE ROLAND·Filed 2009·Granted Dec 4, 2012·2 cites·12 claims
- 1953US11387169B2Transistor with I/O ports in an active area of the transistorNXP USA INC·Filed 2020·Granted Jul 12, 2022·0 cites·24 claims
- 2053US2024055314A1Transistor heat dissipation structureNXP BV·Filed 2022·Application pending·0 cites
- 2152US10422033B2Green method for coating a substrate with silver nanoparticlesUNIV KING SAUD·Filed 2017·Granted Sep 24, 2019·0 cites·11 claims
- 2251US11804527B2Transistor with center fed gateNXP USA INC·Filed 2021·Granted Oct 31, 2023·0 cites·21 claims
- 2350US12191383B2Semiconductor device with an insulating region formed between a control electrode and a conductive element and method of fabrication thereforNXP USA INC·Filed 2021·Granted Jan 7, 2025·0 cites·20 claims
- 2450US11430743B1Transistor with shield system including multilayer shield structure arrangementNXP USA INC·Filed 2021·Granted Aug 30, 2022·0 cites·20 claims
- 2549US11302609B2Radio frequency power dies having flip-chip architectures and power amplifier modules containing the sameNXP USA INC·Filed 2020·Granted Apr 12, 2022·0 cites·20 claims
- 2648US2023207675A1Semiconductor device with a gate electrode having multiple regions and method of fabrication thereforNXP USA INC·Filed 2021·Application pending·0 cites
- 2746US2022376060A1Semiconductor device with conductive element formed over dielectric layers and method of fabrication thereforNXP USA INC·Filed 2021·Application pending·0 cites
- 2845US10826439B2Linearity enhancement of high power amplifiersNXP USA INC·Filed 2018·Granted Nov 3, 2020·0 cites·19 claims
- 2944US10615510B1Feed structure, electrical component including the feed structure, and moduleNXP USA INC·Filed 2018·Granted Apr 7, 2020·0 cites·20 claims
- 3042US11108361B2Integrated multiple-path power amplifier with interdigitated transistorsNXP USA INC·Filed 2019·Granted Aug 31, 2021·0 cites·21 claims
- 3133US2010244043A1Electrical devices having improved transfer characteristics and method for tailoring the transfer characteristics of an electrical deviceFORSCHUNGSVERBUD BERLIN E V·Filed 2008·Application pending·0 cites
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