Inventor · disambiguated record
Nozomu Matsuzaki
Also filed as: MATSUZAKI NOZOMU
66 granted patents·12 pending applications·1,172 citations·filing 1990–2018
99Inventor score
Top patents by PatentIndex Score
78 records- 0199US7864568B2Semiconductor storage deviceRENESAS ELECTRONICS CORP·Filed 2006·Granted Jan 4, 2011·222 cites·13 claims
- 0296US8017986B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2010·Granted Sep 13, 2011·22 cites·21 claims
- 0396US7414283B2Semiconductor deviceRENESAS TECH CORP·Filed 2006·Granted Aug 19, 2008·29 cites·2 claims
- 0495US7700992B2Semiconductor deviceRENESAS TECH CORP·Filed 2008·Granted Apr 20, 2010·23 cites·14 claims
- 0595US7057230B2Nonvolatile semiconductor memory device employing transistors having different gate withstand voltages for enhanced reading speedHITACHI ULSI SYS CO LTD·Filed 2002·Granted Jun 6, 2006·65 cites·21 claims
- 0694US7528036B2Non-volatile semiconductor memory and method of making same, and semiconductor device and method of making deviceRENESAS TECH CORP·Filed 2005·Granted May 5, 2009·18 cites·18 claims
- 0794US7206216B2Semiconductor device with a non-erasable memory and/or a nonvolatile memoryRENESAS TECH CORP·Filed 2005·Granted Apr 17, 2007·33 cites·26 claims
- 0894US7130223B2Nonvolatile semiconductor memory deviceRENESAS TECH CORP·Filed 2005·Granted Oct 31, 2006·28 cites·8 claims
- 0993US7667218B2Semiconductor integrated circuit device and method of manufacturing the sameRENESAS TECH CORP·Filed 2005·Granted Feb 23, 2010·19 cites·14 claims
- 1093US7427791B2Method of forming a CMOS structure having gate insulation films of different thicknessesRENESAS TECH CORP·Filed 2005·Granted Sep 23, 2008·28 cites·13 claims
- 1193US6785165B2Semiconductor deviceRENESAS TECH CORP·Filed 2002·Granted Aug 31, 2004·71 cites·16 claims
- 1292US6461916B1Non-volatile semiconductor memory and method of making same, and semiconductor device and method of making the deviceHITACHI LTD·Filed 1998·Granted Oct 8, 2002·67 cites·50 claims
- 1391US7671404B2Fabrication method and structure of semiconductor non-volatile memory deviceRENESAS TECH CORP·Filed 2006·Granted Mar 2, 2010·13 cites·10 claims
- 1491US6972997B2Nonvolatile semiconductor memory deviceRENESAS TECH CORP·Filed 2003·Granted Dec 6, 2005·48 cites·42 claims
- 1591US6444554B1Method of making a non-volatile memory and semiconductor deviceHITACHI LTD·Filed 2001·Granted Sep 3, 2002·36 cites·9 claims
- 1691US6307236B1Semiconductor integrated circuit deviceHITACHI LTD·Filed 1997·Granted Oct 23, 2001·81 cites·27 claims
- 1788US6833582B2Nonvolatile semiconductor memory deviceRENESAS TECH CORP·Filed 2004·Granted Dec 21, 2004·52 cites·20 claims
- 1887US7692234B2Non-volatile semiconductor memory and method of making same, and semiconductor device and method of making deviceRENESAS TECH CORP·Filed 2007·Granted Apr 6, 2010·8 cites·11 claims
- 1986US8859344B2Semiconductor memoryMATSUI YUICHI·Filed 2011·Granted Oct 14, 2014·5 cites·20 claims
- 2086US7132718B2Fabrication method and structure of semiconductor non-volatile memory deviceRENESAS TECH CORP·Filed 2003·Granted Nov 7, 2006·23 cites·16 claims
- 2184US7796426B2Semiconductor deviceRENESAS TECH CORP·Filed 2005·Granted Sep 14, 2010·16 cites·19 claims
- 2283US8084810B2Fabrication method and structure of semiconductor non-volatile memory deviceHISAMOTO DIGH·Filed 2009·Granted Dec 27, 2011·6 cites·16 claims
- 2383US8000126B2Semiconductor device with recording layer containing indium, germanium, antimony and telluriumRENESAS ELECTRONICS CORP·Filed 2007·Granted Aug 16, 2011·12 cites·19 claims
- 2481US6617632B2Semiconductor device and a method of manufacturing the sameHITACHI LTD·Filed 2001·Granted Sep 9, 2003·34 cites·14 claims
- 2579US8866120B2Semiconductor memoryMATSUI YUICHI·Filed 2011·Granted Oct 21, 2014·2 cites·12 claims
- 2679US8179739B2Semiconductor device and its manufacturing methodHANZAWA SATORU·Filed 2007·Granted May 15, 2012·8 cites·12 claims
- 2779US8054680B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2004·Granted Nov 8, 2011·20 cites·18 claims
- 2879US7778069B2Semiconductor device and its fabrication methodRENESAS TECH CORP·Filed 2005·Granted Aug 17, 2010·11 cites·13 claims
- 2979US7304345B2Non-volatile semiconductor memory and method of making same, and semiconductor device and method of making deviceRENESAS TECH CORP·Filed 2005·Granted Dec 4, 2007·4 cites·10 claims
- 3079US6500715B2Method of forming a CMOS structure having gate insulation films of different thicknessesHITACHI LTD·Filed 2001·Granted Dec 31, 2002·24 cites·5 claims
- 3177US9812211B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2016·Granted Nov 7, 2017·1 cites·6 claims
- 3277US8698224B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2013·Granted Apr 15, 2014·2 cites·21 claims
- 3377US8674419B2Method of forming a CMOS structure having gate insulation films of different thicknessesMATSUZAKI NOZOMU·Filed 2010·Granted Mar 18, 2014·6 cites·20 claims
- 3477US8426904B2Semiconductor deviceTANAKA TOSHIHIRO·Filed 2011·Granted Apr 23, 2013·2 cites·14 claims
- 3577US7781814B2Method of forming a CMOS structure having gate insulation films of different thicknessesRENESAS TECH CORP·Filed 2008·Granted Aug 24, 2010·8 cites·14 claims
- 3675US8737116B2Semiconductor device and its manufacturing methodRENESAS ELECTRONICS CORP·Filed 2013·Granted May 27, 2014·3 cites·5 claims
- 3775US6944056B2Semiconductor non-volatile storage deviceRENESAS TECH CORP·Filed 2001·Granted Sep 13, 2005·17 cites·52 claims
- 3874US8890107B2Semiconductor memoryMATSUI YUICHI·Filed 2009·Granted Nov 18, 2014·3 cites·15 claims
- 3974US8482961B2Semiconductor device and its manufacturing methodHANZAWA SATORU·Filed 2012·Granted Jul 9, 2013·3 cites·5 claims
- 4073US7180793B2Semiconductor non-volatile storage deviceRENESAS TECH CORP·Filed 2005·Granted Feb 20, 2007·4 cites·20 claims
- 4169US7955872B2Manufacturing method of semiconductor integrated circuit device using magnetic memoryHITACHI LTD·Filed 2010·Granted Jun 7, 2011·2 cites·18 claims
- 4268US8319204B2Semiconductor deviceTERAO MOTOYASU·Filed 2006·Granted Nov 27, 2012·7 cites·2 claims
- 4368US7385838B2Semiconductor device with a non-erasable memory and/or a nonvolatile memoryRENESAS TECH CORP·Filed 2007·Granted Jun 10, 2008·5 cites·12 claims
- 4467US9111909B2Method of forming a CMOS structure having gate insulation films of different thicknessesRENESAS ELECTRONICS CORP·Filed 2014·Granted Aug 18, 2015·0 cites·20 claims
- 4566US10354735B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2018·Granted Jul 16, 2019·0 cites·6 claims
- 4665US10115469B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2017·Granted Oct 30, 2018·0 cites·6 claims
- 4765US7195976B2Non-volatile semiconductor memory and method of making same, and semiconductor device and method of making deviceRENESAS TECH CORP·Filed 2004·Granted Mar 27, 2007·6 cites·46 claims
- 4862US7141475B2Non-volatile semiconductor memory and method of making same, and semiconductor device and method of making deviceRENESAS TECH CORP·Filed 2004·Granted Nov 28, 2006·5 cites·9 claims
- 4960US9412750B2Fabrication method and structure of semiconductor non-volatile memory deviceRENESAS ELECTRONICS CORP·Filed 2016·Granted Aug 9, 2016·0 cites·3 claims
- 5059US9412459B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2014·Granted Aug 9, 2016·0 cites·2 claims
Showing the top 50 of 78 patent records by PatentIndex Score.
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