Inventor · disambiguated record
Yasushi Yamagata
Also filed as: YAMAGATA YASUSHI
16 granted patents·271 citations·filing 1991–2022
94Inventor score
Top patents by PatentIndex Score
16 records- 0190US11676655B2Semiconductor integrated circuit device and wearable deviceRENESAS ELECTRONICS CORP·Filed 2022·Granted Jun 13, 2023·1 cites·6 claims
- 0287US9646679B2Semiconductor device with mode designation and substrate bias circuitsRENESAS ELECTRONICS CORP·Filed 2015·Granted May 9, 2017·6 cites·1 claims
- 0383US5282160ANon-volatile semiconductor memory having double gate structureNEC CORP·Filed 1991·Granted Jan 25, 1994·52 cites·2 claims
- 0481US10311943B2Semiconductor integrated circuit device and wearable deviceRENESAS ELECTRONICS CORP·Filed 2018·Granted Jun 4, 2019·3 cites·8 claims
- 0579US9959924B2Semiconductor integrated circuit device and wearable deviceRENESAS ELECTRONICS CORP·Filed 2017·Granted May 1, 2018·3 cites·7 claims
- 0678US11373700B2Semiconductor integrated circuit device with SOTE and MOS transistorsRENESAS ELECTRONICS CORP·Filed 2019·Granted Jun 28, 2022·1 cites·11 claims
- 0776US5677875ANon-volatile semiconductor memory device configured to minimize variations in threshold voltages of non-written memory cells and potentials of selected bit linesNEC CORP·Filed 1996·Granted Oct 14, 1997·40 cites·18 claims
- 0876US5070378AEprom erasable by uv radiation having redundant circuitNEC CORP·Filed 1991·Granted Dec 3, 1991·42 cites·5 claims
- 0973US5362358ADry etching apparatus and method of forming a via hole in an interlayer insulator using sameNEC CORP·Filed 1993·Granted Nov 8, 1994·47 cites·2 claims
- 1059US5535158ANon-volatile semiconductor memory device and method for erasure and production thereofNEC CORP·Filed 1994·Granted Jul 9, 1996·20 cites·7 claims
- 1155US5210053AMethod for fabricating semiconductor deviceNEC CORP·Filed 1992·Granted May 11, 1993·24 cites·8 claims
- 1252US5441595ADry etching apparatus and method of forming a via hole in an interlayer insulator using sameNEC CORP·Filed 1994·Granted Aug 15, 1995·19 cites·6 claims
- 1349US5331592ANon-volatile semiconductor memory device with erasure control circuitNEC CORP·Filed 1993·Granted Jul 19, 1994·13 cites·3 claims
- 1445US9947645B2Multi-project wafer with IP protection by reticle mask pattern modificationGLOBALFOUNDRIES SG PTE LTD·Filed 2015·Granted Apr 17, 2018·0 cites·20 claims
- 1544US9069923B2IP protectionTAN SOON YOENG·Filed 2011·Granted Jun 30, 2015·0 cites·19 claims
- 1637US10014067B2Semiconductor device and manufacturing method thereofRENESAS ELECTRONICS CORP·Filed 2016·Granted Jul 3, 2018·0 cites·14 claims
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →