Inventor · disambiguated record
Milan Pophristic
Also filed as: POPHRISTIC MILAN
14 granted patents·7 pending applications·277 citations·filing 2003–2025
93Inventor score
Top patents by PatentIndex Score
21 records- 0195US8368121B2Enhancement-mode HFET circuit arrangement having high power and high threshold voltagePOWER INTEGRATIONS INC·Filed 2010·Granted Feb 5, 2013·23 cites·17 claims
- 0294US7939853B2Termination and contact structures for a high voltage GaN-based heterojunction transistorPOWER INTEGRATIONS INC·Filed 2007·Granted May 10, 2011·29 cites·9 claims
- 0393US7863172B2Gallium nitride semiconductor devicePOWER INTEGRATIONS INC·Filed 2008·Granted Jan 4, 2011·27 cites·18 claims
- 0492US7084475B2Lateral conduction Schottky diode with plural mesasVELOX SEMICONDUCTOR CORP·Filed 2004·Granted Aug 1, 2006·85 cites·77 claims
- 0590US7115896B2Semiconductor structures for gallium nitride-based devicesEMCORE CORP·Filed 2003·Granted Oct 3, 2006·55 cites·31 claims
- 0686US8169003B2Termination and contact structures for a high voltage GaN-based heterojunction transistorMURPHY MICHAEL·Filed 2011·Granted May 1, 2012·7 cites·23 claims
- 0785US7436039B2Gallium nitride semiconductor deviceVELOX SEMICONDUCTOR CORP·Filed 2005·Granted Oct 14, 2008·10 cites·23 claims
- 0883US8319256B2Layout design for a high power, GaN-based FETLIU LINLIN·Filed 2010·Granted Nov 27, 2012·9 cites·19 claims
- 0974US7229866B2Non-activated guard ring for semiconductor devicesVELOX SEMICONDUCTOR CORP·Filed 2004·Granted Jun 12, 2007·20 cites·12 claims
- 1073US2025157805A1Multi-mode ionization apparatus and uses thereofMSTM LLC·Filed 2025·Application pending·0 cites
- 1163US7253015B2Low doped layer for nitride-based semiconductor deviceVELOX SEMICONDUCTOR CORP·Filed 2004·Granted Aug 7, 2007·11 cites·36 claims
- 1262US8530903B2Layout design for a high power, GaN-based FET having interdigitated electrodesPOWER INTEGRATIONS INC·Filed 2012·Granted Sep 10, 2013·1 cites·20 claims
- 1362US2025069878A1Vacuum Chamber Assembly with Multiple Functions to Maximize Universality and PerformanceMSTM LLC·Filed 2024·Application pending·0 cites
- 1461US12205807B2Multi-mode ionization apparatus and uses thereofPOPHRISTIC MILAN·Filed 2021·Granted Jan 21, 2025·0 cites·25 claims
- 1553US8729565B2Layout design for a high power, GaN-based FET having interdigitated gate, source and drain electrodesPOWER INTEGRATIONS INC·Filed 2013·Granted May 20, 2014·0 cites·20 claims
- 1648US8963209B2Enhancement-mode HFET circuit arrangement having high power and a high threshold voltagePOWER INTEGRATIONS INC·Filed 2013·Granted Feb 24, 2015·0 cites·18 claims
- 1748US2012238063A1Termination and Contact Structures for a High Voltage Gan-Based Heterojunction TransistorMURPHY MICHAEL·Filed 2012·Application pending·0 cites
- 1847US2006154455A1Gallium nitride-based devices and manufacturing processEMCORE CORP·Filed 2006·Application pending·0 cites
- 1946US2011101371A1Gallium nitride semiconductorPOWER INTEGRATIONS INC·Filed 2010·Application pending·0 cites
- 2040US2009321787A1High voltage GaN-based heterojunction transistor structure and method of forming sameVELOX SEMICONDUCTOR CORP·Filed 2007·Application pending·0 cites
- 2138US2007093037A1Vertical structure semiconductor devices and method of fabricating the sameVELOX SEMICONDUTOR CORP·Filed 2006·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →