Inventor · disambiguated record
Toshihiko Shiga
Also filed as: SHIGA TOSHIHIKO
14 granted patents·2 pending applications·157 citations·filing 1994–2016
89Inventor score
Top patents by PatentIndex Score
16 records- 0191US6013926ASemiconductor device with refractory metal elementMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Jan 11, 2000·110 cites·5 claims
- 0276US7851831B2TransistorMITSUBISHI ELECTRIC CORP·Filed 2007·Granted Dec 14, 2010·7 cites·19 claims
- 0374US10854523B2Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2016·Granted Dec 1, 2020·2 cites·16 claims
- 0465US7569911B2Semiconductor device having an improved wiring or electrode structureMITSUBISHI ELECTRIC CORP·Filed 2006·Granted Aug 4, 2009·3 cites·8 claims
- 0563US7879635B2Method for manufacturing semiconductor optical deviceMITSUBISHI ELECTRIC CORP·Filed 2007·Granted Feb 1, 2011·2 cites·11 claims
- 0658US7616673B2Semiconductor laser deviceMITSUBISHI ELECTRIC CORP·Filed 2006·Granted Nov 10, 2009·1 cites·7 claims
- 0752US5498572AMethod of manufacturing semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Mar 12, 1996·20 cites·8 claims
- 0848US7791097B2Nitride semiconductor device and manufacturing method of the sameMITSUBISHI ELECTRIC CORP·Filed 2007·Granted Sep 7, 2010·0 cites·10 claims
- 0948US5631479ASemiconductor device with laminated refractory metal schottky barrier gate electrodeMITSUBISHI ELECTRIC CORP·Filed 1995·Granted May 20, 1997·12 cites·6 claims
- 1047US9018736B2Semiconductor device and method of manufacturing semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2014·Granted Apr 28, 2015·0 cites·9 claims
- 1146US7714439B2Nitride semiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2007·Granted May 11, 2010·0 cites·6 claims
- 1243US2008029777A1Semiconductor optical device and manufacturing method thereforMITSUBISHI ELECTRIC CORP·Filed 2007·Application pending·0 cites
- 1340US7598548B2Semiconductor device and field-effect transistorMITSUBISHI ELECTRIC CORP·Filed 2005·Granted Oct 6, 2009·0 cites·9 claims
- 1439US7288486B2Method for manufacturing semiconductor device having via holesMITSUBISHI ELECTRIC CORP·Filed 2006·Granted Oct 30, 2007·0 cites·10 claims
- 1538US2006231871A1Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2006·Application pending·0 cites
- 1635US8766445B2Semiconductor deviceHISAKA TAKAYUKI·Filed 2012·Granted Jul 1, 2014·0 cites·5 claims
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