Inventor · disambiguated record
Yong-Chul Oh
Also filed as: OH YONG HUN · OH YONG-CHUL
51 granted patents·11 pending applications·863 citations·filing 1998–2019
98Inventor score
Top patents by PatentIndex Score
62 records- 0196US8058683B2Access device having vertical channel and related semiconductor device and a method of fabricating the access deviceYOON JAE-MAN·Filed 2007·Granted Nov 15, 2011·43 cites·17 claims
- 0296US6683364B2Integrated circuit devices including an isolation region defining an active region area and methods for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Jan 27, 2004·118 cites·25 claims
- 0394US6187651B1Methods of forming trench isolation regions using preferred stress relieving layers and techniques to inhibit the occurrence of voidsSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Feb 13, 2001·174 cites·14 claims
- 0493US8552472B2Integrated circuit devices including vertical channel transistors with shield lines interposed between bit lines and methods of fabricating the sameKIM HUI-JUNG·Filed 2011·Granted Oct 8, 2013·20 cites·18 claims
- 0591US8884340B2Semiconductor devices including dual gate electrode structures and related methodsKIM JI-YOUNG·Filed 2011·Granted Nov 11, 2014·13 cites·19 claims
- 0691US7977725B2Integrated circuit semiconductor device including stacked level transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Jul 12, 2011·20 cites·17 claims
- 0791US7223649B2Method of fabricating transistor of DRAM semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted May 29, 2007·59 cites·61 claims
- 0891US6326282B1Method of forming trench isolation in a semiconductor device and structure formed therebySAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Dec 4, 2001·105 cites·7 claims
- 0986US8105904B2Method of manufacturing semiconductor devicesOH YONG-CHUL·Filed 2010·Granted Jan 31, 2012·8 cites·11 claims
- 1086US6642125B2Integrated circuits having adjacent P-type doped regions having shallow trench isolation structures without liner layers therein therebetween and methods of forming sameSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Nov 4, 2003·37 cites·22 claims
- 1185US6140242AMethod of forming an isolation trench in a semiconductor device including annealing at an increased temperatureSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Oct 31, 2000·60 cites·11 claims
- 1284US7902026B2Method of fabricating semiconductor device having vertical channel transistorSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Mar 8, 2011·12 cites·19 claims
- 1383US8373214B2Semiconductor devices with buried bit lines and methods of manufacturing semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Feb 12, 2013·7 cites·23 claims
- 1483US8304824B2Semiconductor device comprising buried word linesKIM HUI-JUNG·Filed 2010·Granted Nov 6, 2012·8 cites·20 claims
- 1583US7872302B2Semiconductor device having vertical transistor formed on an active pattern protruding from a substrateSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Jan 18, 2011·10 cites·8 claims
- 1680US8409953B2Method of manufacturing a semiconductor deviceYOON JAE-MAN·Filed 2011·Granted Apr 2, 2013·5 cites·8 claims
- 1780US7586150B2Semiconductor devices with local recess channel transistors and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Sep 8, 2009·7 cites·14 claims
- 1879US9349724B2Semiconductor device having capacitorsSAMSUNG ELECTRONICS CO LTD·Filed 2012·Granted May 24, 2016·6 cites·19 claims
- 1979US7999309B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Aug 16, 2011·6 cites·12 claims
- 2079US7943978B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted May 17, 2011·5 cites·10 claims
- 2179US6573168B2Methods for forming conductive contact body for integrated circuits using dummy dielectric layerSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Jun 3, 2003·28 cites·34 claims
- 2277US8362536B2Semiconductor device having vertical channel transistor and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Jan 29, 2013·4 cites·30 claims
- 2375US8274112B2Semiconductor memory device having pillar structuresKIM HUI-JUNG·Filed 2010·Granted Sep 25, 2012·5 cites·17 claims
- 2475US7501668B2Semiconductor memory devices having contact pads with silicide caps thereonSAMUNG ELECTRONICS CO LTD·Filed 2006·Granted Mar 10, 2009·5 cites·17 claims
- 2574US8785998B2Semiconductor device having vertical channel transistor and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2012·Granted Jul 22, 2014·3 cites·22 claims
- 2674US8435855B2Methods of manufacturing semiconductor devicesKIM KANG-UK·Filed 2010·Granted May 7, 2013·4 cites·12 claims
- 2772US6670689B2Semiconductor device having shallow trench isolation structureSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Dec 30, 2003·22 cites·14 claims
- 2869US8766354B2Semiconductor devices including vertical channel transistors and methods of manufacturing the sameCHUNG HYUN-WOO·Filed 2011·Granted Jul 1, 2014·3 cites·20 claims
- 2969US7842572B2Methods of manufacturing semiconductor devices with local recess channel transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Nov 30, 2010·3 cites·23 claims
- 3066US8183613B2Bipolar transistor for a memory arrayJEONG HOON·Filed 2010·Granted May 22, 2012·3 cites·11 claims
- 3166US7737512B2Integrated circuit devices having uniform silicide junctionsSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jun 15, 2010·2 cites·38 claims
- 3262US8786009B2Substrate structures including buried wiring, semiconductor devices including substrate structures, and method of fabricating the sameKIM KANG-UK·Filed 2010·Granted Jul 22, 2014·1 cites·19 claims
- 3362US8053832B2Capacitor-less DRAM deviceSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Nov 8, 2011·2 cites·6 claims
- 3461US10150638B2Tape dispenserOH YONG CHUL·Filed 2014·Granted Dec 11, 2018·1 cites·6 claims
- 3561US8623724B2Method of manufacturing a semiconductor device including a capacitor electrically connected to a vertical pillar transistorKIM HUI-JUNG·Filed 2012·Granted Jan 7, 2014·1 cites·9 claims
- 3660US8247856B2Semiconductor device including a capacitor electrically connected to a vertical pillar transistorKIM HUI-JUNG·Filed 2010·Granted Aug 21, 2012·1 cites·9 claims
- 3759US7329927B2Integrated circuit devices having uniform silicide junctionsSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Feb 12, 2008·1 cites·22 claims
- 3857US7307008B2Methods of forming integrated circuit devices including a multi-layer poly film cell pad contact holeSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Dec 11, 2007·7 cites·22 claims
- 3957US6844240B2Semiconductor device having trench isolationSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Jan 18, 2005·6 cites·3 claims
- 4056US6974752B2Methods of fabricating integrated circuit devices having uniform silicide junctionsSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Dec 13, 2005·5 cites·27 claims
- 4155US6875649B2Methods for manufacturing integrated circuit devices including an isolation region defining an active region areaSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Apr 5, 2005·5 cites·17 claims
- 4254US11396439B2Tape dispenser having fixing leverOH YONG CHUL·Filed 2018·Granted Jul 26, 2022·0 cites·5 claims
- 4354USD860312SAdhesive tape dispenserOH YONG CHUL·Filed 2017·Granted Sep 17, 2019·6 cites·1 claims
- 4453US6372606B1Method of forming isolation trenches in a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Apr 16, 2002·18 cites·10 claims
- 4552US7144798B2Semiconductor memory devices having extending contact pads and related methodsSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Dec 5, 2006·4 cites·58 claims
- 4651US8343831B2Semiconductor device and method of manufacturing the semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2011·Granted Jan 1, 2013·0 cites·10 claims
- 4750US2009090947A1Semiconductor device and method of manufacturing a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 4849US7833864B2Method of doping polysilicon layer that utilizes gate insulation layer to prevent diffusion of ion implanted impurities into underlying semiconductor substrateSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Nov 16, 2010·0 cites·23 claims
- 4948US7863174B2Vertical pillar transistorSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Jan 4, 2011·0 cites·9 claims
- 5046US8039325B2Methods of fabricating semiconductor device having capacitorless one-transistor memory cellSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Oct 18, 2011·0 cites·14 claims
Showing the top 50 of 62 patent records by PatentIndex Score.
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