Inventor · disambiguated record
Hwa Cheng
Also filed as: CHENG HWA · CHENG HWA-CHI
14 granted patents·662 citations·filing 1990–1996
95Inventor score
Top patents by PatentIndex Score
14 records- 0195US5395791AGrowth of II VI laser diodes with quantum wells by atomic layer epitaxy and migration enhanced epitaxyMINNESOTA MINING & MFG·Filed 1993·Granted Mar 7, 1995·228 cites·20 claims
- 0286US5404027ABuried ridge II-VI laser diodeMINNESOTA MINING & MFG·Filed 1993·Granted Apr 4, 1995·59 cites·34 claims
- 0384US5291507ABlue-green laser diodeMINNESOTA MINING & MFG·Filed 1992·Granted Mar 1, 1994·65 cites·34 claims
- 0475US5574296ADoping of IIB-VIA semiconductors during molecular beam epitaxy electromagnetic radiation transducer having p-type ZnSe layerMINNESOTA MINING & MFG·Filed 1993·Granted Nov 12, 1996·50 cites·21 claims
- 0575US5538918AMethod of fabricating a buried-ridge II-VI laser diodeMINNESOTA MINING & MFG·Filed 1994·Granted Jul 23, 1996·32 cites·13 claims
- 0675US5248631ADoping of iib-via semiconductors during molecular beam epitaxy using neutral free radicalsMINNESOTA MINING & MFG·Filed 1990·Granted Sep 28, 1993·51 cites·46 claims
- 0770US5319219ASingle quantum well II-VI laser diode without claddingMINNESOTA MINING & MFG·Filed 1992·Granted Jun 7, 1994·27 cites·19 claims
- 0870US5274269AOhmic contact for p-type group II-IV compound semiconductorsMINNESOTA MINING & MFG·Filed 1991·Granted Dec 28, 1993·31 cites·32 claims
- 0968US5396103AGraded composition ohmic contact for P-type II-VI semiconductorsMINNESOTA MINING & MFG·Filed 1993·Granted Mar 7, 1995·30 cites·37 claims
- 1066US5213998AMethod for making an ohmic contact for p-type group II-VI compound semiconductorsMINNESOTA MINING & MFG·Filed 1991·Granted May 25, 1993·26 cites·16 claims
- 1158US5513199ABlue-green laser diodeMINNESOTA MINING & MFG·Filed 1995·Granted Apr 30, 1996·24 cites·51 claims
- 1257US5641595AManufacture of color filters by incremental exposure methodIND TECH RES INST·Filed 1996·Granted Jun 24, 1997·20 cites·20 claims
- 1343US6057559AII-VI laser diodes with short-period strained-layer superlattice quantum wells3M INNOVATIVE PROPERTIES CO·Filed 1995·Granted May 2, 2000·9 cites·13 claims
- 1442US5698168AUnibody gas plasma source technologyCHORUS CORP·Filed 1995·Granted Dec 16, 1997·10 cites·6 claims
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