Inventor · disambiguated record
Ahmad Mizan
Also filed as: MIZAN AHMAD
18 granted patents·3 pending applications·141 citations·filing 2010–2023
94Inventor score
Top patents by PatentIndex Score
21 records- 0196US9589868B2Packaging solutions for devices and systems comprising lateral GaN power transistorsGAN SYSTEMS INC·Filed 2016·Granted Mar 7, 2017·20 cites·19 claims
- 0294US11515235B2Device topology for lateral power transistors with low common source inductanceGAN SYSTEMS INC·Filed 2020·Granted Nov 29, 2022·3 cites·25 claims
- 0393US9659854B2Embedded packaging for devices and systems comprising lateral GaN power transistorsGAN SYSTEMS INC·Filed 2015·Granted May 23, 2017·14 cites·15 claims
- 0493US9589869B2Packaging solutions for devices and systems comprising lateral GaN power transistorsGAN SYSTEMS INC·Filed 2016·Granted Mar 7, 2017·9 cites·21 claims
- 0593US8791508B2High density gallium nitride devices using island topologyROBERTS JOHN·Filed 2011·Granted Jul 29, 2014·22 cites·14 claims
- 0692US10529802B2Scalable circuit-under-pad device topologies for lateral GaN power transistorsGAN SYSTEMS INC·Filed 2018·Granted Jan 7, 2020·11 cites·24 claims
- 0789US12107416B2Integrated bidirectional ESD protection circuit for power semiconductor switching devicesGAN SYSTEMS INC·Filed 2022·Granted Oct 1, 2024·1 cites·20 claims
- 0889US10218346B1High current lateral GaN transistors with scalable topology and gate drive phase equalizationGAN SYSTEMS INC·Filed 2017·Granted Feb 26, 2019·7 cites·20 claims
- 0989US9824949B2Packaging solutions for devices and systems comprising lateral GaN power transistorsGAN SYSTEMS INC·Filed 2016·Granted Nov 21, 2017·8 cites·21 claims
- 1089US9660639B2Distributed driver circuitry integrated with GaN power transistorsGAN SYSTEMS INC·Filed 2016·Granted May 23, 2017·7 cites·15 claims
- 1188US9029866B2Gallium nitride power devices using island topographyROBERTS JOHN·Filed 2011·Granted May 12, 2015·11 cites·22 claims
- 1287US9064947B2Island matrixed gallium nitride microwave and power switching transistorsROBERTS JOHN·Filed 2010·Granted Jun 23, 2015·11 cites·18 claims
- 1386US9508797B2Gallium nitride power devices using island topographyROBERTS JOHN·Filed 2015·Granted Nov 29, 2016·5 cites·14 claims
- 1485US9153509B2Fault tolerant design for large area nitride semiconductor devicesGAN SYSTEMS INC·Filed 2014·Granted Oct 6, 2015·9 cites·21 claims
- 1577US11139373B2Scalable circuit-under-pad device topologies for lateral GaN power transistorsGAN SYSTEMS INC·Filed 2019·Granted Oct 5, 2021·2 cites·12 claims
- 1666US12040257B2Device topology for lateral power transistors with low common source inductanceGAN SYSTEMS INC·Filed 2022·Granted Jul 16, 2024·0 cites·16 claims
- 1765US9818857B2Fault tolerant design for large area nitride semiconductor devicesGAN SYSTEMS INC·Filed 2014·Granted Nov 14, 2017·1 cites·29 claims
- 1858US2023019052A1Fabrication of embedded die packaging comprising laser drilled viasGAN SYSTEMS INC·Filed 2022·Application pending·0 cites
- 1955US12166115B2Solder resist structure for embedded die packaging of power semiconductor devicesINFINEON TECH CANADA INC·Filed 2021·Granted Dec 10, 2024·0 cites·19 claims
- 2053US2023402342A1Dual-side cooled embedded die packaging for power semiconductor devicesGAN SYSTEMS INC·Filed 2023·Application pending·0 cites
- 2148US2021367035A1SCALABLE CIRCUIT-UNDER-PAD DEVICE TOPOLOGIES FOR LATERAL GaN POWER TRANSISTORSGAN SYSTEMS INC·Filed 2021·Application pending·0 cites
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