Inventor · disambiguated record
Bernhard Grote
Also filed as: GROTE BERNHARD · GROTE BERNHARD H · GROTE BERNHARD HEINRICH
46 granted patents·12 pending applications·135 citations·filing 2008–2025
97Inventor score
Top patents by PatentIndex Score
58 records- 0196US10103257B1Termination design for trench superjunction power MOSFETNXP USA INC·Filed 2017·Granted Oct 16, 2018·17 cites·12 claims
- 0293US12148820B2Transistors with source-connected field platesNXP BV·Filed 2021·Granted Nov 19, 2024·4 cites·15 claims
- 0390US8338872B2Electronic device with capcitively coupled floating buried layerKHEMKA VISHNU K·Filed 2010·Granted Dec 25, 2012·17 cites·20 claims
- 0489US10600911B2Field-effect transistor and method thereforNXP USA INC·Filed 2017·Granted Mar 24, 2020·7 cites·12 claims
- 0589US10424646B2Field-effect transistor and method thereforNXP USA INC·Filed 2017·Granted Sep 24, 2019·6 cites·13 claims
- 0688US8969958B1Integrated MOS power transistor with body extension region for poly field plate depletion assistKHEMKA VISHNU·Filed 2012·Granted Mar 3, 2015·12 cites·9 claims
- 0786US10522677B2Field-effect transistor and method thereforNXP USA INC·Filed 2017·Granted Dec 31, 2019·5 cites·14 claims
- 0886US10431678B2Termination design for trench superjunction power MOSFETNXP USA INC·Filed 2018·Granted Oct 1, 2019·4 cites·5 claims
- 0986US8963241B1Integrated MOS power transistor with poly field plate extension for depletion assistKHEMKA VISHNU·Filed 2012·Granted Feb 24, 2015·10 cites·14 claims
- 1086US8623732B2Methods of making laterally double diffused metal oxide semiconductor transistors having a reduced surface field structureGROTE BERNHARD H·Filed 2010·Granted Jan 7, 2014·9 cites·16 claims
- 1186US8193585B2Semiconductor device with increased snapback voltageGROTE BERNHARD H·Filed 2009·Granted Jun 5, 2012·15 cites·20 claims
- 1284US11018247B1Semiconductor device with a base link region and method thereforNXP USA INC·Filed 2019·Granted May 25, 2021·3 cites·23 claims
- 1382US11329150B2Termination for trench field plate power MOSFETNXP USA INC·Filed 2020·Granted May 10, 2022·1 cites·18 claims
- 1481US7608908B1Robust deep trench isolationFREESCALE SEMICONDUCTOR INC·Filed 2008·Granted Oct 27, 2009·12 cites·20 claims
- 1576US8384184B2Laterally diffused metal oxide semiconductor deviceFREESCALE SEMICONDUCTOR INC·Filed 2010·Granted Feb 26, 2013·3 cites·15 claims
- 1674US8816434B2Laterally double diffused metal oxide semiconductor transistors having a reduced surface field structuresFREESCALE SEMICONDUCTOR INC·Filed 2013·Granted Aug 26, 2014·3 cites·16 claims
- 1772US12336254B2Semiconductor device with conductive elements formed over dielectric layers and method of fabrication thereforNXP BV·Filed 2024·Granted Jun 17, 2025·0 cites·19 claims
- 1871US11227921B2Laterally-diffused metal-oxide semiconductor transistor and method thereforNXP USA INC·Filed 2019·Granted Jan 18, 2022·1 cites·18 claims
- 1971US10225925B2Radio frequency coupling and transition structureFREESCALE SEMICONDUCTOR INC·Filed 2016·Granted Mar 5, 2019·2 cites·20 claims
- 2071US2025267913A1Transistors with self-aligned source-connected field platesNXP USA INC·Filed 2025·Application pending·0 cites
- 2170US10418483B2Laterally diffused metal oxide semiconducting devices with lightly-doped isolation layersNXP BV·Filed 2017·Granted Sep 17, 2019·1 cites·19 claims
- 2270US2025267885A1Transistors with source-connected field platesNXP USA INC·Filed 2025·Application pending·0 cites
- 2368US11777002B2Laterally-diffused metal-oxide semiconductor transistor and method thereforNXP USA INC·Filed 2021·Granted Oct 3, 2023·0 cites·20 claims
- 2468US10833174B2Transistor devices with extended drain regions located in trench sidewallsNXP USA INC·Filed 2018·Granted Nov 10, 2020·1 cites·20 claims
- 2567US12464799B2Semiconductor device with a field plate having a recessed region and an overhanging portion and method of fabrication thereforNXP USA INC·Filed 2022·Granted Nov 4, 2025·0 cites·26 claims
- 2667US11631763B2Termination for trench field plate power MOSFETNXP USA INC·Filed 2022·Granted Apr 18, 2023·0 cites·18 claims
- 2764US7927955B2Adjustable bipolar transistors formed using a CMOS processFREESCALE SEMICONDUCTOR INC·Filed 2008·Granted Apr 19, 2011·2 cites·16 claims
- 2863US12349433B2Transistors with self-aligned source-connected field platesNXP USA INC·Filed 2021·Granted Jul 1, 2025·0 cites·10 claims
- 2959US11923424B2Semiconductor device with conductive elements formed over dielectric layers and method of fabrication thereforNXP BV·Filed 2020·Granted Mar 5, 2024·0 cites·17 claims
- 3059US2025142924A1Semiconductor device with multi-step gate and recessed multi-step field plate with field plate spacers and method of fabricationNXP USA INC·Filed 2023·Application pending·0 cites
- 3159US2025142922A1Semiconductor device with multi-step gate and multi-step field plate and method of fabrication thereforNXP USA INC·Filed 2023·Application pending·0 cites
- 3258US12342560B2Transistors with source-connected field platesNXP USA INC·Filed 2021·Granted Jun 24, 2025·0 cites·11 claims
- 3357US12107143B2Semiconductor device with extrinsic base region and method of fabrication thereforNXP BV·Filed 2022·Granted Oct 1, 2024·0 cites·18 claims
- 3457US2025142923A1Semiconductor device with multi-step gate and recessed multi-step field plate and method of fabrication thereforNXP USA INC·Filed 2023·Application pending·0 cites
- 3555US2024395872A1Semiconductor device with field plate and multiple-part gate structure and method of fabrication thereforNXP USA INC·Filed 2023·Application pending·0 cites
- 3654US2024222442A1Semiconductor device with a recessed field plate and method of fabrication thereforNXP USA INC·Filed 2022·Application pending·0 cites
- 3753US2024055314A1Transistor heat dissipation structureNXP BV·Filed 2022·Application pending·0 cites
- 3852US11217675B2Trench with different transverse cross-sectional widthsNXP USA INC·Filed 2020·Granted Jan 4, 2022·0 cites·22 claims
- 3952US9209277B2Manufacturing methods for laterally diffused metal oxide semiconductor devicesFREESCALE SEMICONDUCTOR INC·Filed 2013·Granted Dec 8, 2015·0 cites·19 claims
- 4051US9281375B2Methods of producing bipolar transistors having emitter-base junctions of varying depths and/or doping concentrationsLIN XIN·Filed 2014·Granted Mar 8, 2016·0 cites·20 claims
- 4150US12191383B2Semiconductor device with an insulating region formed between a control electrode and a conductive element and method of fabrication thereforNXP USA INC·Filed 2021·Granted Jan 7, 2025·0 cites·20 claims
- 4249US11387348B2Transistor formed with spacerNXP USA INC·Filed 2019·Granted Jul 12, 2022·0 cites·20 claims
- 4349US8344481B2Bipolar transistors with hump regionsFREESCALE SEMICONDUCTOR INC·Filed 2011·Granted Jan 1, 2013·0 cites·12 claims
- 4448US12057499B2Transistor devices with termination regionsNXP USA INC·Filed 2020·Granted Aug 6, 2024·0 cites·21 claims
- 4548US2023197797A1Transistors with source-connected field platesNXP BV·Filed 2021·Application pending·0 cites
- 4648US2023207675A1Semiconductor device with a gate electrode having multiple regions and method of fabrication thereforNXP USA INC·Filed 2021·Application pending·0 cites
- 4747US11075110B1Transistor trench with field plate structureNXP USA INC·Filed 2020·Granted Jul 27, 2021·0 cites·20 claims
- 4847US10607880B2Die with buried doped isolation regionNXP USA INC·Filed 2018·Granted Mar 31, 2020·0 cites·9 claims
- 4946US11329156B2Transistor with extended drain regionNXP USA INC·Filed 2019·Granted May 10, 2022·0 cites·11 claims
- 5046US10580856B2Structure for improved noise signal isolationNXP USA INC·Filed 2018·Granted Mar 3, 2020·0 cites·19 claims
Showing the top 50 of 58 patent records by PatentIndex Score.
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